臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
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Institution	Date	Title	Author
南台科技大學	1994	Photoreflectance Study of Single Quantum Well AlGaAS/GaAs/GaInP Structure Grown by MOCVD Technique	管鴻; T.S. Wu; Y.K. Su; H. Kuan
南台科技大學	1994	A Study of GaSb Schottky Contacts	管鴻; Y.K. Su; H. Kuan; P.H. Chang; S.W. Chiou
國立高雄師範大學	1994	P-N Double Quantum Well Resonant Interband Tunneling Diode with Peak-to-valley Current Ratio of 144 At Room Temperature	Ruey-Lue Wang;H. H. Tsai;Y. K. Su;H. H. Lin;T.L. Lee; 王瑞祿
國立高雄師範大學	1993	Delta-Doping Inter band Tunneling diode by Metal-Organic Chemical Vapor Deposition	Ruey-Lue Wang;Y. K. Su;R. L. Wang;H. H. Tsai; 王瑞祿
國立高雄師範大學	1993	Double Quantum Well Resonant Tunneling Diode	Ruey-Lue Wang;H. H. Tsai;Y. K. Su;T. S. Wu;C. H. Su; 王瑞祿
國立高雄師範大學	1992	The Current-Voltage Characteristics of a Delta-Doped Triple-Barrier Switch	Ruey-Lue Wang;Y. K. Su;C. H. Su;H.H. Tsai; 王瑞祿
國立高雄師範大學	1992	The Switching Characteristics in Sawtooth Type Superlattice with Asymmetric Doping	Ruey-Lue Wang;H. H. Tsai;Y. K. Su; 王瑞祿
國立高雄師範大學	1992	Delta-Doped Layer and Related Interband Tunnelin Giode by MOCVD	Ruey-Lue Wang;Y. K. Su;H. H. Tsai;C.H. Su; 王瑞祿
國立高雄師範大學	1992	GaAs Negative Differential Resistance Devices	Ruey-Lue Wang;Y. K. Su;H. H. Tsai; 王瑞祿
國立高雄師範大學	1992	Delta-Doped Triple-Barrier Switching Device	Ruey-Lue Wang;T. S. Wu;Y. K. Su;H. H. Tsai; 王瑞祿
國立高雄師範大學	1991	Negative Differential Resistance in GaAs Delta-Doping Tunneling Diodes	Ruey-Lue Wang;Y. K. Su;Y. H. Wang; 王瑞祿
國立臺灣海洋大學	1991	A Study of the Growth Rate of ZnSe Epilayer on GaAs Substrate Using Vapor Phase Epitaxy	C.C.Chang; Y.K.Su; C.C.Wei; S.S.Chou; S.H.Yang; F.L.Hsu
國立高雄師範大學	1990-06	A Novel Negative Differential Resistance in Delta-Doping Induced Homojunction Double Barrier Quantum Well Diode	Ruey-Lue Wang;Y. K. Su;Y. H. Wang;K. F. Yarn; 王瑞祿
國立高雄師範大學	1990	Negative differential resistance of a delta-doping-induced double-barrier quantum-well diode at room temperature	Ruey-Lue Wang;Y. K. Su;Y. H. Wang;K. F. Yarn; 王瑞祿
國立臺灣海洋大學	1989-12	The effect of growth time and thickness on the electrical properties of ZnSe epilayers on GaAs substrates	Y. K. Su; C. C. Chang; C. C. Wei; F. J. Hwang
國立臺灣海洋大學	1988	Epitaxial Twin growth of ZnSe on Semi-Insulating ZnSe Substrate	C. C. Chang; C. C. Wei; Y.K.Su
國立臺灣海洋大學	1988	The Growth and Characterization of ZnSe Epilayers Grown by VPE and MOCVD	Y. K. Su; C.C.Wei; C. C. Chang
國立臺灣海洋大學	1987-07	Growth and Characterization of ZnSe Single Crystals by Closed Tube Method	C. C. Chang; C. C. Wei; Y. K. Su; H. C. Tzeng
國立臺灣海洋大學	1986	Surface Morphology and Properties of GaAs Epilayers Controlled by Temperature Difference Method of Liquid Phase Epitaxy	Y.K.Su; C.C.Wei; S.C.Lu; C.C.Chang
國立臺灣海洋大學	1986	Liquid Phase Epitaxy Growth of GaAs-Si by Temperature Difference Method	C.C.Wei; Y.K.Su; C.C.Chang; S.C.Lu
國立中山大學	1984	Growth Mechanisms of the GaAs LPMOCVD Growth	C.Y. Chang;M.K. Lee;Y.K. Su;Y.C. Chou;L.P. Chen
國立中山大學	1983	Enhancement of Growth Rate due to Tin Doping in GaAs Epilayer Grown by Low Pressure Metalorgarlic Chemical Vapor Deposition	M.K. Lee; C.Y. Chang; Y.K. Su; W.C. Hsu
國立中山大學	1983	Control of Silicon Dioxide Properties by RF Sputtering	M.K. Lee; C.Y. Chang; I.S. Tzeng; Y.K. Su
國立中山大學	1983	Investigation of Sn-doped GaAs Epilayers Grown by Low Pressure Metal-Organic Chemical Vapor Deposition	M.K. Lee; C.Y. Chang; Y.K. Su
國立中山大學	1982-10	Sn-doped GaAs Epilayers Grown by Low Pressure MOCVD	C.Y. Chang;M.K. Lee;Y.K. Su

Showing items 96-120 of 125 (5 Page(s) Totally)
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