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Showing items 1-20 of 20 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:42:14Z |
Effective repair to ultra-low-k dielectric material (k-2.0) by hexamethyidisilazane treatment
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Mor, YS; Chang, TC; Liu, PT; Tsai, TM; Chen, CW; Yan, ST; Chu, CJ; Wu, WF; Pan, FM; Lur, W; Sze, SM |
| 國立交通大學 |
2014-12-08T15:41:21Z |
Electrical transport phenomena in aromatic hydrocarbon polymer
|
Liu, PT; Chang, TC; Yan, ST; Li, CH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:41:07Z |
Moisture-induced material instability of porous organosilicate glass
|
Chang, TC; Chen, CW; Liu, PT; Mor, YS; Tsai, HM; Tsai, TM; Yan, ST; Tu, CH; Tseng, TY; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:54Z |
A method for fabricating a superior oxide/nitride/oxide gate stack
|
Chang, TC; Yan, ST; Liu, PT; Wang, MC; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:53Z |
Quasi-superlattice storage - A concept of multilevel charge storage
|
Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:46Z |
A novel approach of fabricating germanium nanocrystals for nonvolatile memory application
|
Chang, TC; Yan, ST; Liu, PT; Chen, CW; Lin, SH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:46Z |
A novel distributed charge storage element fabricated by the oxidation of amorphous silicon carbide
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Chang, TC; Yan, ST; Chen, YT; Liu, PT; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:45Z |
Study on SONOS nonvolatile memory technology using high-density plasma CVD silicon nitride
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Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, YC; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:45Z |
CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications
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Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:39:42Z |
Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications
|
Chang, TC; Yan, ST; Liu, R; Lin, ZW; Aoki, H; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:42Z |
CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications
|
Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, T |
| 國立交通大學 |
2014-12-08T15:39:27Z |
Memory effect of oxide/SiC : O/oxide sandwiched structures
|
Chang, TC; Yan, ST; Yang, FM; Liu, PT; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:21Z |
A distributed charge storage with GeO2 nanodots
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Chang, TC; Yan, ST; Hsu, CH; Tang, MT; Lee, JF; Tai, YH; Liu, PT; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:16Z |
Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application
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Chang, TC; Tsai, TM; Liu, PT; Yan, ST; Chang, YC; Aoki, H; Sze, SM; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:39:12Z |
Leakage behavior of the quasi-superlattice stack for multilevel charge storage
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Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:38:58Z |
Memory effect of oxide/SiC : O/oxide sandwiched structures" (vol 84, pg 2094, 2004)
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Chang, TC; Yan, ST; Yang, FM; Liu, PT; Sze, SM |
| 國立交通大學 |
2014-12-08T15:38:48Z |
Quasisuperlattice storage: A concept of multilevel charge storage
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Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:37:17Z |
Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications (Vol 447, pg 516, 2004)
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Chang, TC; Yan, ST; Liu, PT; Lin, ZW; Aoki, H; Sze, SM |
| 國立交通大學 |
2014-12-08T15:37:01Z |
Memory effect of oxide/oxygen-incorporated silicon carbide/oxide sandwiched structure
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Chang, TC; Liu, PT; Yan, ST; Yang, FM; Sze, SM |
| 國立交通大學 |
2014-12-08T15:36:06Z |
Electron charging and discharging effects of tungsten nanocrystals embedded in silicon dioxide for low-voltage nonvolatile memory technology
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Chang, TC; Liu, PT; Yan, ST; Sze, SM |
Showing items 1-20 of 20 (1 Page(s) Totally)
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