| 亞洲大學 |
2016-04 |
AN EXPERIMENTAL AND ANALYTICAL METHOD TO OBSERVE THE POLYSILICON NANOWIRE MOSFET THRESHOLD VOLTAGE
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Sheu), 許健(Gene;Yang)*, 楊紹明(Shao-Ming;Aanand(Aanand);Imam), Syed(Syed Sarwar;Fan), 范宗宸(Chung-Chen;Lu), Shao Wei Lu(Shao Wei |
| 亞洲大學 |
2016-03 |
Effect of Time and Temperature on Epitaxy Growth
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Aanand(Aanand);Sheu), 許健(Gene;Yang)*, 楊紹明(Shao-Ming;Lai), 賴秋仲(Ciou-Jhong;Imam), Syed(Syed Sarwar |
| 亞洲大學 |
2015-06 |
Reliability Analysis of Amorphous Silicon Thin-Film Transistors during Accelerated ESD stress
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蔡宗叡(TSAI, JUNG-RUEY);Yang), 楊紹明(Shao-Ming;Sheu), 許健(Gene;Chang), Ruey Dar Cha(Ruey Dar;Wen), Ting Ting We(Ting Ting |
| 亞洲大學 |
2015-04 |
Improvement of On-Resistance Degradation Induced by Hot Carrier
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Ningaraju), Vivek Ningar(Vivek;Yang), 楊紹明(Shao-Ming;Sheu), 許健(Gene;Amanullah4), Md.Amanullah(Md.;Kurniawan), Erry Dwi Kur(Erry Dwi;Subramanyaj6(Subramanyaj6) |
| 亞洲大學 |
2015-04 |
Simulation of P-type Doping Profile Prediction Using
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Ningaraju), Vivek Ningar(Vivek;Pramudyo), Antonius Fra(Antonius Fran Yannu;Sheu), 許健(Gene;Kurniawan), Erry Dwi Kur(Erry Dwi;Yang), 楊紹明(Shao-Ming;Ma), Jia-Wei Ma(Jia-Wei;Subramanyaj(Subramanyaj) |
| 亞洲大學 |
2015-04 |
Optimization of Holding Voltage for 5V multi-finger NMOS using Voltage stepping simulation
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Mrinal), Aryadeep Mri(Aryadeep;Sheu), 許健(Gene;Yang)*, 楊紹明(Shao-Ming;Sharma), Aunny kant S(Aunny kant;wang), 王俊博(Jun-bo;Amanullah), Md. Amanulla(Md. |
| 亞洲大學 |
2015-04 |
Simulation of P-type Doping Profile Prediction Using Different Ion Implantation and Diffusion Model
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Ningaraju), Vivek Ningar(Vivek;Pramudyo), Antonius Fra(Antonius Fran Yannu;Sheu), 許健(Gene;Kurniawan), Erry Dwi Kur(Erry Dwi;Yang)*, 楊紹明(Shao-Ming;Ma), Jia-Wei Ma(Jia-Wei;Subramanyaj(Subramanyaj) |
| 亞洲大學 |
2015-04 |
Improvement of On-Resistance Degradation Induced by Hot Carrier Injection in SOI-LDMOS
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Ningaraju), Vivek Ningar(Vivek;Yang)*, 楊紹明(Shao-Ming;Sheu), 許健(Gene;Amanullah), Md.Amanullah(Md.;Kurniawan), Erry Dwi Kur(Erry Dwi;Subramanyaj(Subramanyaj) |
| 亞洲大學 |
2015-03 |
High Voltage NLDMOS with Multiple-RESURF Structure to Achieve Improved On-resistance
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Yang, 楊紹明 Shao-Ming |
| 亞洲大學 |
2015-03 |
A HSPICE Macro Model for the ESD Behavior of Gate Grounded NMOS and Gate coupled NMOS
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Yang, 楊紹明 Shao-Ming;Sheu, 許健 Gene;Md.Amanulla, Md.Amanullah;Chen, 陳柏安 PA |
| 亞洲大學 |
2015-03 |
High Voltage NLDMOS with Multiple-RESURF Structure to Achieve Improved On-resistance
|
Yang)*, 楊紹明(Shao-Ming;EP), Hema EP(Hema;Mrinal), Aryadeep Mri(Aryadeep;Sheu), 許健(Gene;Chen), 陳柏安(PA |
| 亞洲大學 |
2015-03 |
A HSPICE Macro Model for the ESD Behavior of Gate Grounded NMOS and Gate coupled NMOS
|
Yang), 楊紹明(Shao-Ming;EP), Hema EP(Hema;Sheu), 許健(Gene;Mrinal), Aryadeep Mri(Aryadeep;Amanullah), Md. Amanulla(Md.;Chen), 陳柏安(PA |
| 亞洲大學 |
2015-03 |
A NOVEL HSPICE MACRO MODEL FOR THE ESD BEHAVIOR BEHAVIOR BEHAVIOR BEHAVIOR OF GATE
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Yang), 楊紹明(Shao-Ming;Chen, P.A;Sheu), 許健(Gene |
| 亞洲大學 |
2015-03 |
Reliability Analysis of Amorphous Silicon Thin-Film Transistors during Accelerated ESD
|
蔡宗叡(TSAI, JUNG-RUEY);Yang), 楊紹明(Shao-Ming;Sheu), 許健(Gene |
| 亞洲大學 |
2015-03 |
Negative e-beam resists using for nano-imprint lithography and silicone mold fabrication
|
Anil Kumar, (Anil Kumar, T.V.);Shy, S.L(Shy, S.L);Sheu), 許健(Gene;Yang), 楊紹明(Shao-Ming;Chen, M.C.(Chen, M.C.);Hong, C.S.(Hong, C.S.) |
| 亞洲大學 |
2015-03 |
HIGH VOLTAGE VOLTAGE VOLTAGE NLDMOS WITH MULTIPLE-RESURF MULTIPLE-RESURF MULTIPLE-RESURF ULTIPLE-RESURF STRUCTURE STRUCTURE STRUCTURE TRUCTURE TO
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Yang), 楊紹明(Shao-Ming;hema;aryadeep;Sheu), 許健(Gene |
| 亞洲大學 |
2015-03 |
.Negative e-beam resists using for nano-imprint lithography and silicone mold fabricatio
|
Shy, S.L;Sheu), 許健(Gene;Yang), 楊紹明(Shao-Ming;Chen, M.C |
| 亞洲大學 |
2015 |
Simulation of P-type Doping Profile Prediction Using.Applied Mechanics and Materials
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Vivek(Vivek);Antonious(Antonious);Sheu), 許健(Gene;erry(erry);Yang), 楊紹明(Shao-Ming |
| 亞洲大學 |
2015 |
Optimization of Holding Voltage for 5V multi-finger NMOS using Voltage stepping simulation
|
ARYADEEP(ARYADEEP);Sheu), 許健(Gene;Yang), 楊紹明(Shao-Ming;AUNNY(AUNNY);王俊博;Amanulla(Amanulla) |
