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机构 日期 题名 作者
國立交通大學 2019-04-02T06:01:07Z GaN growth on Si(111) using simultaneous AlN/alpha-Si3N4 buffer structure Chang, Jet Rung; Yang, Tsung Hsi; Ku, Jui Tai; Shen, Shih Guo; Chen, Yi Cheng; Wong, Yuen Yee; Chang, Chun Yen
國立交通大學 2014-12-16T06:16:17Z Growth of GaAs epitaixial layers on Si substrate by using a novel GeSi buffer layer Chang, Edward Y.; Luo, Guangli; Yang, Tsung Hsi; Chang, Chung Yen
國立交通大學 2014-12-16T06:16:05Z Growth of GaAs expitaxial layers on Si substrate by using a novel GeSi buffer layer Chang, Edward Y.; Luo, Guangli; Yang, Tsung-Hsi; Chang, Chun-Yen
國立交通大學 2014-12-16T06:16:04Z Architecture of a n-type metal-oxide-semiconductor transistor with a compressive strained silicon-germanium channel fabricated on a silicon (110) substrate Luo, Guangli; Chien, Chao-Hsin; Yang, Tsung-Hsi; Chang, Chun-Yen
國立交通大學 2014-12-16T06:15:50Z Method for forming III-nitrides semiconductor epilayer on the semiconductor substrate Chang, Chun-Yen; Yang, Tsung-Hsi; Shen, Shih-Guo
國立交通大學 2014-12-16T06:15:44Z Light emitting device and fabrication method therefor Chang, Chun-Yen; Yang, Tsung Hsi
國立交通大學 2014-12-16T06:14:19Z Light emitter device Chang Chun-Yen; Yang Tsung Hsi
國立交通大學 2014-12-08T15:29:44Z Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy Wong, Yuen-Yee; Chang, Edward Yi; Wu, Yue-Han; Hudait, Mantu K.; Yang, Tsung-Hsi; Chang, Jet-Rung; Ku, Jui-Tai; Chou, Wu-Ching; Chen, Chiang-Yao; Maa, Jer-Shen; Lin, Yueh-Chin
國立交通大學 2014-12-08T15:23:27Z Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates Wong, Yuen-Yee; Huang, Wei-Ching; Trinh, Hai-Dang; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Micheal; Chang, Edward Yi
國立交通大學 2014-12-08T15:15:35Z Growth behaviour of Ge nano-islands on the nanosized Si{111} facets bordering on two {100} planes Ferng, Shyh-Shin; Yang, Tsung-Hsi; Luo, Guangli; Yang, Kai-Ming; Hsieh, Ming-Feng; Lin, Deng-Sung
國立交通大學 2014-12-08T15:14:16Z High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge/Ge(x)Si(1-x)/Si substrate Luo, Guang-Li; Hsieh, Yen-Chang; Chang, Edward Yi; Pilkuhn, M. H.; Chien, Chao-Hsin; Yang, Tsung-Hsi; Cheng, Chao-Ching; Chang, Chun-Yen
國立交通大學 2014-12-08T15:11:14Z GaN growth on Si(111) using simultaneous AlN/alpha-Si(3)N(4) buffer structure Chang, Jet Rung; Yang, Tsung Hsi; Ku, Jui Tai; Shen, Shih Guo; Chen, Yi Cheng; Wong, Yuen Yee; Chang, Chun Yen
國立交通大學 2014-12-08T15:09:52Z The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy Wong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Yi-Cheng; Ku, Jui-Tai; Lee, Ching-Ting; Chang, Chun-Wei
國立交通大學 2014-12-08T15:09:46Z Growth of free-standing GaN layer on Si(111) substrate Yang, Tsung Hsi; Ku, Jui Tai; Chang, Jet-Rung; Shen, Shih-Guo; Chen, Yi-Cheng; Wong, Yuen Yee; Chou, Wu Ching; Chen, Chien-Ying; Chang, Chun-Yen
國立交通大學 2014-12-08T15:07:51Z The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBE Wong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Ku, Jui-Tai; Hudait, Mantu K.; Chou, Wu-Ching; Chen, Micheal; Lin, Kung-Liang
國立交通大學 2014-12-08T15:07:41Z Epitaxial Overgrowth of Gallium Nitride Nano-Rods on Silicon (111) Substrates by RF-Plasma-Assisted Molecular Beam Epitaxy Ku, Jui-Tai; Yang, Tsung-Hsi; Chang, Jet-Rung; Wong, Yuen-Yee; Chou, Wu-Ching; Chang, Chun-Yen; Chen, Chiang-Yao
國立交通大學 2014-12-08T15:01:23Z Dependence of GaN Defect Structure on the Growth Temperature of the AlN Buffer Layer Wong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Yi-Cheng; Ku, Jui-Tai
國立成功大學 2009-03-01 The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy Wong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Yi-Cheng; Ku, Jui-Tai; Lee, Ching-Ting; Chang, Chun-Wei

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