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Showing items 1-3 of 3 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T06:00:18Z |
Effects of base oxide thickness and silicon composition on charge trapping in HfSiO/SiO2 high-k gate stacks
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Wu, WH; Chen, MC; Tsui, BY; How, YT; Yao, LG; Jin, Y; Tao, HJ; Chen, SC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:25:43Z |
Effects of base oxide in HfSiO/SiO2 high-k gate stacks
|
Wu, WH; Chen, MC; Wang, MF; Hou, TH; Yao, LG; Jin, Y; Chen, SC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:18:40Z |
Effects of base oxide thickness and silicon composition on charge trapping in HfSiO/SiO(2) high-k gate stacks
|
Wu, WH; Chen, MC; Tsui, BY; How, YT; Yao, LG; Jin, Y; Tao, HJ; Chen, SC; Liang, MS |
Showing items 1-3 of 3 (1 Page(s) Totally)
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