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Showing items 1-11 of 11 (1 Page(s) Totally)
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| 國立成功大學 |
2005-10 |
Reliability studies of Hf-doped and NH3-nitrided gate dielectric for advanced CMOS application
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Yang, Chih-Wei; Liang, M. S.; Fang, Yean-Kuen; Hou, T. H.; Yao, Liang-Gi; Chen, S. C.; Chen, S. F.; Lin, C. S.; Lin, C. Y.; Wang, W. D.; CHou, T. H.; Lin, P. J. |
| 國立成功大學 |
2003-10-16 |
Hf-doped and NH3-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift
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Yang, Chih-Wei; Fang, Yean-Kuen; Lin, C. S.; Tsair, Y. S.; Chen, Shi-Ming; Wang, W. D.; Wang, M. F.; Cheng, Juing-Yi; Chen, C. H.; Yao, Liang-Gi; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2003-07-14 |
Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO2 dielectric
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Yang, Chih-Wei; Fang, Yean-Kuen; Chen, C. H.; Chen, S. F.; Lin, C. Y.; Lin, C. S.; Wang, M. F.; Lin, Y. M.; Hou, T. H.; Chen, C. H.; Yao, Liang-Gi; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2003-04-17 |
HfO2/HfSixOy high-K gate stack with very low leakage current for low-power poly-Si gated CMOS application
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Yang, Chih-Wei; Fang, Yean-Kuen; Chen, S. F.; Wang, M. F.; Hou, T. H.; Lin, Y. M.; Yao, Liang-Gi; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2003-04 |
Modeling of the gate leakage current reduction in MOSFET with ultra-thin nitrided gate oxide
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Yang, Chih-Wei; Fang, Yean-Kuen; Ting, S. F.; Chen, C. H.; Wang, W. D.; Lin, T. Y.; Wang, M. F.; Yu, M. C.; Chen, C. L.; Yao, Liang-Gi; Chen, S. C.; Yu, C. H.; Liang, M. S. |
| 國立成功大學 |
2003-03-06 |
Effective improvement of high-k Hf-silicate/silicon interface with thermal nitridation
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Yang, Chih-Wei; Fang, Yean-Kuen; Chen, Shih-Fang; Lin, Chun-Yu; Wang, Ming-Fang; Lin, Yeou-Ming; Hou, Tuo-Hung; Yao, Liang-Gi; Chen, Shih-Chang; Liang, Mong-Song |
| 國立成功大學 |
2003-01 |
Improvement of short-channel characteristics of a 0.1-mu m PMOSFET with ultralow-temperature nitride spacer by using a novel oxide capped boron uphill treatment
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Yang, Chih-Wei; Fang, Yean-Kuen; Chen, C. H.; Wang, W. D.; Ting, S. F.; Cheng, J. Y.; Wang, M. F.; Chen, C. L.; Yao, Liang-Gi; Lee, T. L.; Chen, S. C.; Yu, C. H.; Liang, M. S. |
| 國立成功大學 |
2002-09-26 |
Dramatic reduction of gate leakage current in 1.61 nm HfO2 high-k dielectric poly-silicon gate with AI(2)O(3) capping layer
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Yang, Chih-Wei; Fang, Yean-Kuen; Chen, Chien-Hao; Wang, Wen-De; Lin, Tin-Yu; Wang, Ming-Fang; Hou, Tuo-Hung; Cheng, Juing-Yi; Yao, Liang-Gi; Chen, Shyh-Chang; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2002-04 |
The 1.3-1.6 nm nitrided oxide prepared by NH3 nitridation and rapid thermal annealing for 0.1 mu m and beyond CMOS technology application
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Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Tsair, Yong-Shiuan; Wang, Ming-Fang; Yao, Liang-Gi; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2002-04 |
Determination of deep ultrathin equivalent oxide thickness (EOT) from measuring flat-band C-V curve
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Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Wang, Ming-Fang; Yao, Liang-Gi; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2001-10-25 |
Origins and effects of radical-induced re-oxidation in ultra-thin remote plasma nitrided oxides
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Chen, Chung-Hui; Fang, Yean-Kuen; Hsieh, Wen-Tse; Ting, Shyh-Fann; Yu, Mo-Chiun; Wang, Ming-Fang; Chen, C. L.; Yao, Liang-Gi; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
Showing items 1-11 of 11 (1 Page(s) Totally)
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