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Showing items 1-50 of 79 (2 Page(s) Totally)
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| 臺大學術典藏 |
2022-02-21T23:30:49Z |
First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications
|
SHU-WEI CHANG; Lu, Tsung Han; Yang, Cong Yi; Yeh, Cheng Jui; Huang, Min Kun; Meng, Ching Fan; Chen, Po Jen; Chang, Ting Hsuan; Chang, Yan Shiuan; Jhu, Jhe Wei; Hong, Tzu Chieh; Ke, Chu Chu; Yu, Xin Ren; Lu, Wen Hsiang; Baig, Mohammed Aftab; Cho, Ta Chun; Sung, Po Jung; Su, Chun Jung; Hsueh, Fu Kuo; Chen, Bo Yuan; Hu, Hsin Hui; Wu, Chien Ting; Lin, Kun Lin; Ma, William Cheng Yu; Lu, Darsen D.; Kao, Kuo Hsing; Lee, Yao Jen; Lin, Cheng Li; Huang, Kun Ping; Chen, Kun Ming; Li, Yiming; Samukawa, Seiji; Chao, Tien Sheng; Huang, Guo Wei; Wu, Wen Fa; Lee, Wen Hsi; JIUN-YUN LI; Shieh, Jia Min; Tarng, Jenn Hwan; Wang, Yeong Her; Yeh, Wen Kuan |
| 國立交通大學 |
2020-10-05T02:01:28Z |
Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators
|
Hsieh, Ping-Yi; Chang, Yi-Jui; Chen, Pin-Jun; Chen, Chun-Liang; Yang, Chih-Chao; Huang, Po-Tsang; Chen, Yi-Jing; Shen, Chih-Ming; Liu, Yu-Wei; Huang, Chien-Chi; Tai, Ming-Chi; Lo, Wei-Chung; Shen, Chang-Hong; Shieh, Jia-Min; Chang, Da-Chiang; Chen, Kuan-Neng; Yeh, Wen-Kuan; Hu, Chenming |
| 國立交通大學 |
2020-10-05T02:01:28Z |
Monolithic 3D SRAM-CIM Macro Fabricated with BEOL Gate-All-Around MOSFETs
|
Hsueh, Fu-Kuo; Lee, Chun-Ying; Xue, Cheng-Xin; Shen, Chang-Hong; Shieh, Jia-Min; Chen, Bo-Yuan; Chiu, Yen-Cheng; Chen, Hsiu-Chih; Kao, Ming-Hsuan; Huang, Wen-Hsien; Li, Kai-Shin; Wu, Chien-Ting; Lin, Kun-Lin; Chen, Kun-Ming; Huang, Guo-Wei; Chang, Meng-Fan; Hu, Chenming; Yeh, Wen-Kuan |
| 國立交通大學 |
2019-05-02T00:25:53Z |
Comparison of the Physical and Electrical Properties of HfO2/Al2O3/HfO2/GeOx/Ge and HfO2/Al2O3/GeOx/Ge Gate Stacks
|
Tsai, Yi-He; Chou, Chen-Han; Li, Hui-Hsuan; Yeh, Wen-Kuan; Lino, Yu-Hsien; Ko, Fu-Hsiang; Chien, Chao-Hsin |
| 國立交通大學 |
2019-04-03T06:44:21Z |
AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
|
Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I-Feng; Ostreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung |
| 國立交通大學 |
2019-04-02T06:04:37Z |
Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft
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Li, Kai-Shin; Wei, Yun-Jie; Chen, Yi-Ju; Chiu, Wen-Cheng; Chen, Hsiu-Chih; Lee, Min-Hung; Chiu, Yu-Fan; Hsueh, Fu-Kuo; Wu, Bo-Wei; Chen, Pin-Guang; Lai, Tung-Yan; Chen, Chun-Chi; Shieh, Jia-Min; Yeh, Wen-Kuan; Salahuddin, Sayeef; Hu, Chenming |
| 國立交通大學 |
2019-04-02T06:04:36Z |
Location-controlled-grain Technique for Monolithic 3D BEOL FinFET Circuits
|
Yang, Chih-Chao; Hsieh, Tung-Ying; Huang, Po-Tsang; Chen, Kuan-Neng; Wu, Wan-Chi; Chen, Shih-Wei; Chang, Chia-He; Shen, Chang-Hong; Shieh, Jia-Min; Hu, Chenming; Wu, Meng-Chyi; Yeh, Wen-Kuan |
| 國立交通大學 |
2019-04-02T06:00:28Z |
Demonstration of HfO2-Based Gate Dielectric With Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti Into Interfacial Layer
|
Tsai, Yi-He; Chou, Chen-Han; Chung, Yun-Yan; Yeh, Wen-Kuan; Lin, Yu-Hsien; Ko, Fu-Hsiang; Chien, Chao-Hsin |
| 國立交通大學 |
2019-04-02T05:59:54Z |
First Experimental Demonstration and Mechanism of Abnormal Palladium Diffusion Induced by Excess Interstitial Ge
|
Chou, Chen-Han; Shih, An-Shih; Yu, Shao-Cheng; Lin, Yu-Hsi; Tsai, Yi-He; Lin, Chiung-Yuan; Yeh, Wen-Kuan; Chien, Chao-Hsin |
| 國立交通大學 |
2019-04-02T05:59:53Z |
Effect of NH3 Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High-kappa Dielectric nMOSFETs
|
Chen, Yu-Ting; Chen, Kun-Ming; Lin, Cheng-Li; Yeh, Wen-Kuan; Huang, Guo-Wei; Lai, Chien-Ming; Chen, Yi-Wen; Hsu, Che-Hua; Huang, Fon-Shan |
| 國立交通大學 |
2018-08-21T05:56:39Z |
A Numerical Study of Si-TMD Contact with n/p Type Operation and Interface Barrier Reduction for Sub-5 nm Monolayer MoS2 FET
|
Tang, Ying-Tsan; Li, Kai-Shin; Li, Lain-Jong; Li, Ming-Yang; Lin, Chang-Hsien; Chen, Yi-Ju; Chen, Chun-Chi; Su, Chuan-Jung; Wu, Bo-Wei; Wu, Cheng-San; Chen, Min-Cheng; Shieh, Jia-Min; Yeh, Wen-Kuan; Su, Po-Cheng; Wang, Tahui; Yang, Fu-Liang; Hu, Chenming |
| 國立交通大學 |
2018-08-21T05:56:39Z |
First Fully Functionalized Monolithic 3D(+) IoT Chip with 0.5 V Light-electricity Power Management, 6.8 GHz Wireless-communication VCO, and 4-layer Vertical ReRAM
|
Hsueh, Fu-Kuo; Shen, Chang-Hong; Shieh, Jia-Min; Li, Kai-Shin; Chen, Hsiu-Chih; Huang, Wen-Hsien; Wang, Hsing-Hsiang; Yang, Chih-Chao; Hsieh, Tung-Ying; Lin, Chang-Hsien; Chen, Bo-Yuan; Shiao, Yu-Shao; Huang, Guo-Wei; Wong, Oi-Ying; Chen, Po-Hung; Yeh, Wen-Kuan |
| 國立交通大學 |
2018-08-21T05:53:58Z |
Experimental Realization of Thermal Stability Enhancement of Nickel Germanide Alloy by Using TiN Metal Capping
|
Chou, Chen-Han; Tsai, Yi-He; Hsu, Chung-Chun; Jau, Yu-Hau; Lin, Yu-Hsien; Yeh, Wen-Kuan; Chien, Chao-Hsin |
| 國立交通大學 |
2018-08-21T05:53:19Z |
Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
|
Chou, Chen-Han; Lu, Yu-Hong; Tsai, Yi-He; Shih, An-Shih; Yeh, Wen-Kuan; Chien, Chao-Hsin |
| 國立交通大學 |
2017-04-21T06:56:37Z |
Enabling n-type polycrystalline Ge junctionless FinFET of low thermal budget by in situ doping of channel and visible pulsed laser annealing
|
Huang, Wen-Hsien; Shieh, Jia-Min; Kao, Ming-Hsuan; Shen, Chang-Hong; Huang, Tzu-En; Wang, Hsing-Hsiang; Yang, Chih-Chao; Hsieh, Tung-Ying; Hsieh, Jin-Long; Yu, Peichen; Yeh, Wen-Kuan |
| 國立交通大學 |
2017-04-21T06:56:33Z |
Junction-less poly-Ge FinFET and charge-trap NVM fabricated by laser-enabled low thermal budget processes
|
Huang, Wen-Hsien; Shieh, Jia-Min; Shen, Chang-Hong; Huang, Tzu-En; Wang, Hsing-Hsiang; Yang, Chih-Chao; Hsieh, Tung-Ying; Hsieh, Jin-Long; Yeh, Wen-Kuan |
| 國立交通大學 |
2017-04-21T06:55:58Z |
Improving Thermal Stability and Interface State Density of High-kappa Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
|
Tsai, Yi-He; Chou, Chen-Han; Shih, An-Shih; Jau, Yu-Hau; Yeh, Wen-Kuan; Lin, Yu-Hsien; Ko, Fu-Hsiang; Chien, Chao-Hsin |
| 國立交通大學 |
2017-04-21T06:55:42Z |
Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
|
Chou, Chen-Han; Chang, Hao-Hsuan; Hsu, Chung-Chun; Yeh, Wen-Kuan; Chien, Chao-Hsin |
| 國立交通大學 |
2017-04-21T06:50:15Z |
MOS2 U-shape MOSFET with 10 nm Channel Length and Poly-Si Source/Drain Serving as Seed for Full Wafer CVD MOS2 Availability
|
Li, Kai-Shin; Wu, Bo-Wei; Li, Lain-Jong; Li, Ming-Yang; Cheng, Chia-Chin Kevin; Hsu, Cho-Lun; Lin, Chang-Hsien; Chen, Yi-Ju; Chen, Chun-Chi; Wu, Chien-Ting; Chen, Min-Cheng; Shieh, Jia-Min; Yeh, Wen-Kuan; Chueh, Yu-Lun; Yang, Fu-Liang; Hu, Chenming |
| 國立交通大學 |
2017-04-21T06:49:14Z |
Hybrid Si/TMD 2D Electronic Double Channels Fabricated Using Solid CVD Few-Layer-MoS2 Stacking for V-th Matching and CMOS-Compatible 3DFETs
|
Chen, Min-Cheng; Lin, Chia-Yi; Li, Kai-Hsin; Li, Lain-Jong; Chen, Chang-Hsiao; Chuang, Cheng-Hao; Lee, Ming-Dao; Chen, Yi-Ju; Hou, Yun-Fang; Lin, Chang-Hsien; Chen, Chun-Chi; Wu, Bo-Wei; Wu, Cheng-San; Yang, Ivy; Lee, Yao-Jen; Yeh, Wen-Kuan; Wang, Tahui; Yang, Fu-Liang; Hu, Chenming |
| 國立交通大學 |
2017-04-21T06:49:12Z |
Logic/Memory Hybrid 3D Sequentially Integrated Circuit Using Low Thermal Budget Laser Process
|
Yang, Chih-Chao; Hsieh, Tung-Ying; Huang, Wen-Hsien; Wu, Tsung-Ta; Wang, Hsing-Hsiang; Shen, Chang-Hong; Kao, Ming-Hsuan; Yeh, Wen-Kuan; Chang, Meng-Fan; Wu, Meng-Chyi; Shieh, Jia-Min |
| 國立交通大學 |
2017-04-21T06:49:09Z |
a-SiGeC Thin Film Photovoltaic Enabled Self-Power Monolithic 3D IC Under Indoor Illumination
|
Kao, Ming-Hsuan; Yang, Chih-Chao; Wu, Tsung-Ta; Hsieh, Tung-Ying; Huang, Wen-Hsieh; Wang, Hsing-Hsiang; Shen, Chang-Hong; Yeh, Wen-Kuan; Chang, Meng-Fan; Shieh, Jia-Min |
| 國立交通大學 |
2017-04-21T06:48:48Z |
3D-TCAD Simulation Study of the Contact All Around T-FinFET Structure for 10nm Metal-Oxide-Semiconductor Field-Effect Transistor
|
Chou, Chen-Han; Hsu, Chung-Chun; Yeh, Wen-Kuan; Chung, Steve S.; Chien, Chao-Hsin |
| 國立交通大學 |
2017-04-21T06:48:46Z |
Suspended Ge Gate-All-Around Nanowire nFETs with Junction Isolation on Bulk Si
|
Wan, Chia-Chen; Luo, Guang-Li; Hsu, Shu-Han; Hung, Kuo-Dong; Chu, Chun-Lin; Hou, Tuo-Hung; Su, Chun-Jun; Chen, Szu-Hung; Wu, Wen-Fa; Yeh, Wen-Kuan |
| 國立交通大學 |
2017-04-21T06:48:19Z |
Diamond-shaped Ge and Ge0.9Si0.1 Gate-All-Around Nanowire FETs with Four {111} Facets by Dry Etch Technology
|
Lee, Yao-Jen; Hou, Fu-Ju; Chuang, Shang-Shiun; Hsueh, Fu-Kuo; Kao, Kuo-Hsing; Sung, Po-Jung; Yuan, Wei-You; Yao, Jay-Yi; Lu, Yu-Chi; Lin, Kun-Lin; Wu, Chien-Ting; Chen, Hisu-Chih; Chen, Bo-Yuan; Huang, Guo-Wei; Chen, Henry J. H.; Li, Jiun-Yun; Li, Yiming; Samukawa, Seiji; Chao, Tien-Sheng; Tseng, Tseung-Yuen; Wu, Wen-Fa; Hou, Tuo-Hung; Yeh, Wen-Kuan |
| 國立交通大學 |
2017-04-21T06:48:19Z |
High Performance Poly Si Junctionless Transistors with Sub-5nm Conformally Doped Layers by Molecular Monolayer Doping and Microwave Incorporating CO2 Laser Annealing for 3D Stacked ICs Applications
|
Lee, Yao-Jen; Cho, Ta-Chun; Sung, Po-Jung; Kao, Kuo-Hsing; Hsueh, Fu-Kuo; Hou, Fu-Ju; Chen, Po-Cheng; Chen, Hsiu-Chih; Wu, Chien-Ting; Hsu, Shu-Han; Chen, Yi-Ju; Huang, Yao-Ming; Hou, Yun-Fang; Huang, Wen-Hsien; Yang, Chih-Chao; Chen, Bo-Yuan; Lin, Kun-Lin; Chen, Min-Cheng; Shen, Chang-Hong; Huang, Guo-Wei; Huang, Kun-Ping; Current, Michael I.; Li, Yiming; Samukawa, Seiji; Wu, Wen-Fa; Shieh, Jia-Min; Chao, Tien-Sheng; Yeh, Wen-Kuan |
| 國立交通大學 |
2017-04-21T06:48:18Z |
TMD FinFET with 4 nm Thin Body and Back Gate Control for Future Low Power Technology
|
Chen, Min-Cheng; Li, Kai-Shin; Li, Lain-Jong; Lu, Ang-Yu; Li, Ming-Yang; Chang, Yung-Huang; Lin, Chang-Hsien; Chen, Yi-Ju; Hou, Yun-Fang; Chen, Chun-Chi; Wu, Bo-Wei; Wu, Cheng-San; Yang, Ivy; Lee, Yao-Jen; Shieh, Jia-Min; Yeh, Wen-Kuan; Shih, Jyun-Hong; Su, Po-Cheng; Sachid, Angada B.; Wang, Tahui; Yang, Fu-Liang; Hu, Chenming |
| 國立成功大學 |
2016-12 |
Microstructure and piezoelectric properties of reactively sputtered highly C-axis ScxAl1-xN thin films on diamond-like carbon/Si substrate
|
Liauh, Woan Jwu; Wu, Sean; Huang, Jow-Lay; Lii, Ding-Fwu; Lin, Zhi-Xun; Yeh, Wen-Kuan |
| 國立成功大學 |
2016-04-29 |
Microstructure and Piezoelectric Properties of Reactively Sputtered Highly C-axis ScxAl1-xN Thin Films on Diamond-Like Carbon/Si Substrate
|
Liauh, Woan-Jwu; Wu, Sean; Huang, Jow-Lay; Lii, Ding-Fwu; Lin, Zhi-Xun; Yeh, Wen-Kuan |
| 國立交通大學 |
2014-12-08T15:23:37Z |
Experimental Verification of RF Stress Effect on Cascode Class-E PA Performance and Reliability
|
Yuan, Jiann-Shiun; Yen, Hsuan-Der; Chen, Shuyu; Wang, Ruey-Lue; Huang, Guo-Wei; Juang, Ying-Zong; Tu, Chih-Ho; Yeh, Wen-Kuan; Ma, Jun |
| 國立交通大學 |
2014-12-08T15:12:04Z |
Effect of NH(3) Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High-kappa Dielectric nMOSFETs
|
Chen, Yu-Ting; Chen, Kun-Ming; Lin, Cheng-Li; Yeh, Wen-Kuan; Huang, Guo-Wei; Lai, Chien-Ming; Chen, Yi-Wen; Hsu, Che-Hua; Huang, Fon-Shan |
| 國立高雄大學 |
2011-03 |
The Improvement of High-k/Metal Gate pMOSFET Performance and Reliability Using Optimized Si Cap/SiGe Channel Structure
|
Yeh, Wen-Kuan; Chen, Yu-Ting; Huang, Fon-Shan; Hsu, Chia-Wei; Chen, Chun-Yu; Fang, Yean-Kuen; Gan, Kwang-Jow; Chen, Po-Ying |
| 國立成功大學 |
2011-03 |
The Improvement of High-k/Metal Gate pMOSFET Performance and Reliability Using Optimized Si Cap/SiGe Channel Structure
|
Yeh, Wen-Kuan; Chen, Yu-Ting; Huang, Fon-Shan; Hsu, Chia-Wei; Chen, Chun-Yu; Fang, Yean-Kuen; Gan, Kwang-Jow; Chen, Po-Ying |
| 國立高雄大學 |
2011 |
NBTI reliability on high-k metal-gate SiGe transistor and circuit performances
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Yuan, Jiann-Shiun; Yeh, Wen-Kuan; Chen, Shuyu; Hsu, Chia-Wei |
| 國立高雄大學 |
2011 |
Impact of SOI thickness on device performance and gate oxide reliability of Ni fully silicide metal-gate strained SOI MOSFET
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Lin, Cheng-Li; Yeh, Wen-Kuan |
| 國立高雄大學 |
2010-08 |
External Stresses on Tensile and Compressive Contact Etching Stop Layer SOI MOSFETs
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Chang, Wen-Teng; Wang, Chih-Chung; Lin, Jian-An; Yeh, Wen-Kuan |
| 國立高雄大學 |
2010-02 |
The Impact of Oxide Traps Induced by SOI Thickness on Reliability of Fully Silicide Metal-Gate Strained SOI MOSFET
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Lin, Cheng-Li; Chen, Yu-Ting; Huang, Fon-Shan; Yeh, Wen-Kuan; Lin, Chien-Ting |
| 國立高雄大學 |
2010 |
Improvement of TDDB reliability, characteristics of HfO2 high-k/metal gate MOSFET device with oxygen post deposition annealing
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Hsu, Chia-Wei; Fang, Yean-Kuen; Yeh, Wen-Kuan; Chen, Chun-Yu; Chiang, Yen-Ting; Juang, Feng-Renn; Lin, Chien-Ting; Lai, Chien-Ming |
| 國立高雄大學 |
2009-07 |
Effect of Nitrogen Incorporation in a Gd Cap Layer on the Reliability of Deep-Submicrometer Hf-Based High-k/Metal-Gate nMOSFETs
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Hsu, Chia-Wei; Fang, Yean-Kuen; Yeh, Wen-Kuan; Chen, Chun-Yu; Lin, Chien-Ting; Hsu, Che-Hua; Cheng, Li-Wei; Lai, Chien-Ming |
| 國立成功大學 |
2009-07 |
Effect of Nitrogen Incorporation in a Gd Cap Layer on the Reliability of Deep-Submicrometer Hf-Based High-k/Metal-Gate nMOSFETs
|
Hsu, Chia-Wei; Fang, Yean-Kuen; Yeh, Wen-Kuan; Chen, Chun-Yu; Lin, Chien-Ting; Hsu, Che-Hua; Cheng, Li-Wei; Lai, Chien-Ming |
| 國立高雄大學 |
2009-03 |
The Impact of Strain Technology on FUSI Gate SOI CMOSFET
|
Yeh, Wen-Kuan; Wang, Jean-An; Tsai, Ming-Hsing; Lin, Chien-Ting; Chen, Po-Ying |
| 國立成功大學 |
2008-11 |
Significantly improving sub-90 nm CMOSFET performances with notch-gate enhanced high tensile-stress contact etch stop layer
|
Hsu, Chia-Wei; Fang, Yean-Kuen; Yeh, Wen-Kuan; Lin, Chien-Ting |
| 國立高雄大學 |
2008-10 |
Significant improvement of 45 nm and beyond complementary metal oxide semiconductor field effect transistor performance with fully silicided and ultimate spacer process technology
|
Hsu, Chia-Wei; Fang, Yean-Kuen; Lin, Chien-Ting; Yeh, Wen-Kuan; Hsu, Che-Hua; Lai, Chieh-Ming; Cheng, Li-Wei; Ma, Mike |
| 國立成功大學 |
2008-09-01 |
Significant improvement of 45 nm and beyond complementary metal oxide semiconductor field effect transistor performance with fully silicided and ultimate spacer process technology
|
Hsu, Chia-Wei; Fang, Yean-Kuen; Lin, Chien-Ting; Yeh, Wen-Kuan; Hsu, Che-Hua; Lai, Chieh-Ming; Cheng, Li-Wei; Ma, Mike |
| 國立成功大學 |
2008-08 |
A high current gain gate-controlled lateral bipolar junction transistor with 90 nm CMOS technology for future RF SoC applications
|
Chen, Shuo-Mao; Fang, Yean-Kuen; Yeh, Wen-Kuan; Lee, I. C.; Chiang, Yen-Ting |
| 國立高雄大學 |
2008-07 |
Significantly improving sub-90 nm CMOSFET performances with notch-gate enhanced high tensile-stress contact etch stop layer
|
Hsu, Chia-Wei; Fang, Yean-Kuen; Yeh, Wen-Kuan; Lin, Chien-Ting |
| 國立高雄大學 |
2008 |
A high current gain gate-controlled lateral bipolar junction transistor with 90 nm CMOS technology for future RF SoC applications
|
Chen, Shuo-Mao; Fang, Yean-Kuen; Yeh, Wen-Kuan; Lee, I.C.; Chiang, Yen-Ting |
| 國立高雄大學 |
2008 |
The impact of stain technology on FUSI gate SOI CMOSFET and device performance enhancement for 45nm node and beyond
|
Yeh, Wen-Kuan; Wang, Jean-An; Lin, Chien-Ting; Cheng, Li-Wei; Ma, Mike |
| 國立高雄大學 |
2007-07 |
The impact of mobility enhanced technology on device performance and reliability for sub-90nm SOI nMOSFETs
|
Yeh, Wen-Kuan |
| 國立高雄大學 |
2007-05 |
Impacts of notched-gate structure on contact etch stop layer (CESL) stressed 90-nm nMOSFET
|
Lin, Chien-Ting; Fang, Yean-Kuen; Yeh, Wen-Kuan; Lai, Chieh-Ming; Hsu, Che-Hua; Cheng, Li-Wei; Ma, Guang-Hwa |
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