國立交通大學 |
2017-04-21T06:55:29Z |
Multifacet Microrod Light-Emitting Diode With Full Visible Spectrum Emission
|
Li, Yun-Jing; Chang, Jet-Rung; Chang, Shih-Pang; Lin, Bo-Wen; Yeh, Yen-Hsien; Kuo, Hao-Chung; Cheng, Yuh-Jen; Chang, Chun-Yen |
國立交通大學 |
2015-12-02T02:59:32Z |
Use of hydrogen etching to remove existing dislocations in GaN epitaxial layers
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Yeh, Yen-Hsien; Chu, Chung-Ming; Wu, Yin-Hao; Hsu, Ying-Chia; Yu, Tzu-Yi; Lee, Wei-I |
國立交通大學 |
2014-12-16T06:15:32Z |
METHOD FOR GROWING GROUP III-V NITRIDE FILM AND STRUCTURE THEREOF
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LEE, Wei I; Huang, Hsin Hsiung; Chen, Kuei Ming; Yeh, Yen Hsien |
國立交通大學 |
2014-12-16T06:15:18Z |
METHOD FOR GROWING GROUP III-V NITRIDE FILM AND STRUCTURE THEREOF
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Lee Wei I; Huang Hsin Hsiung; Chen Kuei Ming; Yeh Yen Hsien |
國立交通大學 |
2014-12-16T06:15:16Z |
Method for treating group III nitride semiconductor
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Lee Wei-I; Hsu Ying-Chia; Yeh Yen-Hsien; Chen Kuei-Ming |
國立交通大學 |
2014-12-16T06:15:08Z |
Method for smoothing group lll nitride semiconductor substrate
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Lee Wei-I; Chen Kuei-Ming; Wu Yin-Hao; Yeh Yen-Hsien |
國立交通大學 |
2014-12-16T06:15:00Z |
METHOD FOR TREATING THE DISLOCATION IN A GAN-CONTAINING SEMICONDUCTOR LAYER
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Lee Wei-I; Yeh Yen-Hsien; Wu Yin-Hao; Yu Tzu-Yi |
國立交通大學 |
2014-12-16T06:14:02Z |
Method for treating the dislocation in a GaN-containing semiconductor layer
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Lee Wei-I; Yeh Yen-Hsien; Wu Yin-Hao; Yu Tzu-Yi |
國立交通大學 |
2014-12-16T06:13:59Z |
Method for smoothing group III nitride semiconductor substrate
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Lee Wei-I; Chen Kuei-Ming; Wu Yin-Hao; Yeh Yen-Hsien |
國立交通大學 |
2014-12-16T06:13:58Z |
Method for treating group III nitride semiconductor
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Lee Wei-I; Hsu Ying-Chia; Yeh Yen-Hsien; Chen Kuei-Ming |
國立交通大學 |
2014-12-12T02:38:49Z |
氫氣蝕刻氮化鎵之原理與應用
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葉彥顯; Yeh, Yen-Hsien; 李威儀; Lee, Wei-I |
國立交通大學 |
2014-12-08T15:47:37Z |
Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching
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Chen, Kuei-Ming; Yeh, Yen-Hsien; Wu, Yin-Hao; Chiang, Chen-Hao; Yang, Din-Ru; Chao, Chu-Li; Chi, Tung-Wei; Fang, Yen-Hsang; Tsay, Jenq-Dar; Lee, Wei-I |
國立交通大學 |
2014-12-08T15:38:01Z |
Hydrogen etching on the surface of GaN for producing patterned structures
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Yeh, Yen-Hsien; Chen, Kuei-Ming; Wu, Yin-Hao; Hsu, Ying-Chia; Lee, Wei-I |
國立交通大學 |
2014-12-08T15:31:58Z |
A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy
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Wu, Yin-Hao; Lee, Chuo-Han; Chu, Chung-Ming; Yeh, Yen-Hsien; Chen, Chan-Lin; Lee, Wei-I |
國立交通大學 |
2014-12-08T15:22:29Z |
Free-standing a-plane GaN substrates grown by HVPE
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Wu, Yin-Hao; Yeh, Yen-Hsien; Chen, Kuei-Ming; Yang, Yu-Jen; Lee, Wei-I |
國立交通大學 |
2014-12-08T15:21:04Z |
Hydrogen etch of GaN and its application to produce porous GaN caves
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Yeh, Yen-Hsien; Hsu, Ying-Chia; Wu, Yin-Hao; Chen, Kuei-Ming; Lee, Wei-I |
國立交通大學 |
2014-12-08T15:20:43Z |
Hydrogen etching of GaN and its application to produce free-standing GaN thick films
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Yeh, Yen-Hsien; Chen, Kuei-Ming; Wu, Yin-Hao; Hsu, Ying-Chia; Yu, Tzu-Yi; Lee, Wei-I |
國立交通大學 |
2014-12-08T15:07:40Z |
Stress and Defect Distribution of Thick GaN Film Homoepitaxially Regrown on Free-Standing GaN by Hydride Vapor Phase Epitaxy
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Chen, Kuei-Ming; Yeh, Yen-Hsien; Wu, Yin-Hao; Chiang, Chen-Hao; Yang, Din-Ru; Gao, Zhong-Shan; Chao, Chu-Li; Chi, Tung-Wei; Fang, Yen-Hsang; Tsay, Jenq-Dar; Lee, Wei-I |
國立交通大學 |
2014-12-08T15:01:14Z |
Homoepitaxy on GaN substrate with various treatments by metalorganic vapor phase epitaxy
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Chen, Kuei-Ming; Wu, Yin-Hao; Yeh, Yen-Hsien; Chiang, Chen-Hao; Chen, Kuei-You; Lee, Wei-I. |