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Institution Date Title Author
國立成功大學 2021-10 Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array Lee;Hsin-Ying;Liu;Day-Shan;Chyi;Jen-Inn;Chang;Yi, Edward;Lee;Ching-Ting
國立成功大學 2021-05-1 Investigation of Multiple-Mesa-Nanochannel Array GaN-Based MOSHEMTs with Al2O3 Gate Dielectric Layer Jian;Jhang-Jie;Lee;Hsin-Ying;Chang;Yi, Edward;Rorsman;Niklas;Lee;Ching-Ting
國立成功大學 2021 Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga2O3 Gate Insulator Layer Lee;Hsin-Ying;Chang;Ting-Wei;Chang;Yi, Edward;Rorsman;Niklas;Lee;Ching-Ting
國立交通大學 2014-12-16T06:14:29Z Method for forming a semiconductor structure having nanometer line-width Chen; Szu-Hung; Lien; Yi-Chung; Chang; Yi Edward

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