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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-12T01:47:34Z |
隨機缺陷在16奈米金屬閘高介電場效應電晶體特性影響之研究
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余俊諺; Yiu, Chun-Yen; 李義明; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:43:38Z |
Nanosized metal grains induced electrical characteristic fluctuation in 16-nm-gate high-kappa/metal gate bulk FinFET devices
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Li, Yiming; Cheng, Hui-Wen; Yiu, Chun-Yen; Su, Hsin-Wen |
| 國立交通大學 |
2014-12-08T15:39:18Z |
3D Device Simulation of Work Function and Interface Trap Fluctuations on High-kappa/Metal Gate Devices
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Cheng, Hui-Wen; Li, Fu-Hai; Han, Ming-Hung; Yiu, Chun-Yen; Yu, Chia-Hui; Lee, Kuo-Fu; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:21:19Z |
A Unified 3D Device Simulation of Random Dopant, Interface Trap and Work Function Fluctuations on High-kappa/Metal Gate Device
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Li, Yiming; Cheng, Hui-Wen; Chiu, Yung-Yueh; Yiu, Chun-Yen; Su, Hsin-Wen |
| 國立交通大學 |
2014-12-08T15:11:48Z |
Dual-Material Gate Approach to Suppression of Random-Dopant-Induced Characteristic Fluctuation in 16 nm Metal-Oxide-Semiconductor Field-Effect-Transistor Devices
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Li, Yiming; Lee, Kuo-Fu; Yiu, Chun-Yen; Chiu, Yung-Yueh; Chang, Ru-Wei |
Showing items 1-5 of 5 (1 Page(s) Totally)
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