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Showing items 1-9 of 9 (1 Page(s) Totally)
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| 國立成功大學 |
2002-05 |
Downscaling limit of equivalent oxide thickness in formation of ultrathin gate dielectric by thermal-enhanced remote plasma nitridation
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Chen, Chien-Hao; Fang, Yean-Kuen; Ting, Shyh-Fann; Hsieh, Wen-Tse; Yang, Chih-Wei; Hsu, Tzu-Hsuan; Yu, Mo-Chiun; Lee, Tze-Liang; Chen, Shih-Chang; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2002-04 |
Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric
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Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Chang, Cheng-Nan; Hou, Tuo-Hong; Wang, Ming-Fang; Yu, Mo-Chiun; Lin, Chuing-Liang; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2001-12 |
To optimize electrical properties of the ultrathin (1.6 nm) nitride/oxide gate stacks with bottom oxide materials and post-deposition treatment
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Chen, Chein-Hao; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Wang, Ming-Fang; Hou, Tuo-Hong; Yu, Mo-Chiun; Chen, Shih-Chang; Jang, Syun-Ming; Yu, D. C. H.; Liang, Mong-Song |
| 國立成功大學 |
2001-10-25 |
Origins and effects of radical-induced re-oxidation in ultra-thin remote plasma nitrided oxides
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Chen, Chung-Hui; Fang, Yean-Kuen; Hsieh, Wen-Tse; Ting, Shyh-Fann; Yu, Mo-Chiun; Wang, Ming-Fang; Chen, C. L.; Yao, Liang-Gi; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2001-08 |
Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusion
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Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Yu, Mo-Chiun; Hou, Tuo-Hung; Wang, Ming-Fang; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2001-07 |
The effect of remote plasma nitridation on the integrity of the ultrathin gate dielectric films in 0.13 mu m CMOS technology and beyond
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Ting, Shyh-Fann; Fang, Yean-Kuen; Chen, Chung-Hui; Yang, Chih-Wei; Hsieh, Wen-Tse; Ho, Jyh-Jier; Yu, Mo-Chiun; Jang, Syun-Ming; Yu, Chen-Hua; Liang, Mong-Song; Chen, S; Shih, R |
| 國立成功大學 |
2001-06-07 |
He plus remote plasma nitridation of ultra-thin gate oxide for deep submicron CMOS technology applications
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Ting, Shyh-Fann; Fang, Yean-Kuen; Chen, Chien-Hao; Yang, Chih-Wei; Yu, Mo-Chiun; Jang, Syun-Ming; Yu, Chen-Hua; Liang, Mong-Song; Chen, Sun-Way; Shih, R. |
| 國立成功大學 |
2001-06 |
High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies
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Chen, Chung-Hui; Fang, Yean-Kuen; Yang, Chih-Wei; Ting, Shyh-Fann; Tsair, Yong-Shiuan; Wang, Ming-Fang; Lin, Yu-Min; Yu, Mo-Chiun; Chen, S. C.; Yu, Chen-Hua; Liang, Mong-Song |
| 國立成功大學 |
2000-11 |
Electrical properties of thin gate dielectric grown by rapid thermal oxidation
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Lee, Jiann-Shing; Chang, Shoou-Jinn; Sun, Shi-Chung; Jang, Syun-Ming; Yu, Mo-Chiun |
Showing items 1-9 of 9 (1 Page(s) Totally)
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