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Taiwan Academic Institutional Repository >
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"yuh renn wu"
Showing items 66-90 of 108 (5 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T09:43:43Z |
Scaling performance of Ga2O3/GaN nanowire field effect transistor
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Li, Chi-Kang;Yeh, Po-Chun;Yu, Jeng-Wei;Peng, Lung-Han;Wu, Yuh-Renn; Li, Chi-Kang; Yeh, Po-Chun; Yu, Jeng-Wei; Peng, Lung-Han; Wu, Yuh-Renn; LUNG-HAN PENG; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T09:43:43Z |
Projected Efficiency of Polarization-Matched p-InxGa1-xN/i-InyGa1-yN/n-GaN Double Heterojunction Solar Cells
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Wu, Yuh-Renn; Kuo, Hao-Chung; Chang, Edward Yi; Lin, Shiuan-Huei; YUH-RENN WU; Yu, Peichen; Wang, Hsun-Wen; Wang, Hsun-Wen;Yu, Peichen;Wu, Yuh-Renn;Kuo, Hao-Chung;Chang, Edward Yi;Lin, Shiuan-Huei |
| 臺大學術典藏 |
2018-09-10T09:43:43Z |
On the Efficiency Decrease of the GaN Light-Emitting Nanorod Arrays
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Chen, Liang-Yi;Li, Chi-Kang;Tan, Jin-Yi;Huang, Li-Chuan;Wu, Yuh-Renn;Huang, Jian Jang; Chen, Liang-Yi; Li, Chi-Kang; Tan, Jin-Yi; Huang, Li-Chuan; Wu, Yuh-Renn; Huang, Jian Jang; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T09:43:43Z |
Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes
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Li, Chi-Kang;Yang, Hung-Chih;Hsu, Ta-Cheng;Shen, Yu-Jiun;Liu, Ai-Sen;Wu, Yuh-Renn; Li, Chi-Kang; Yang, Hung-Chih; Hsu, Ta-Cheng; Shen, Yu-Jiun; Liu, Ai-Sen; Wu, Yuh-Renn; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T09:43:43Z |
Semipolar (20(2)over-bar1) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage
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YUH-RENN WU; Kawaguchi, Yoshinobu;Huang, Chia-Yen;Wu, Yuh-Renn;Zhao, Yuji;DenBaars, Steven P.;Nakamura, Shuji; Kawaguchi, Yoshinobu; Huang, Chia-Yen; Wu, Yuh-Renn; Zhao, Yuji; DenBaars, Steven P.; Nakamura, Shuji |
| 臺大學術典藏 |
2018-09-10T09:43:42Z |
Unipolar vertical transport in GaN/AlGaN/GaN heterostructures
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Nath, D. N.;Yang, Z. C.;Lee, C. Y.;Park, P. S.;Wu, Y. R.;Rajan, S.; Nath, D. N.; Yang, Z. C.; Lee, C. Y.; Park, P. S.; Wu, Y. R.; Rajan, S.; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T09:25:19Z |
Ga2O3/GaN single nanowire MOSFET with cut-off frequency ~150GHz
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Jeng-Wei Yu,;Chi-Kang Li,;Po-Chun Yeh,;Yuh-Renn Wu,;Lung-Han Peng,; Jeng-Wei Yu,; Chi-Kang Li,; Po-Chun Yeh,; Yuh-Renn Wu,; Lung-Han Peng,; LUNG-HAN PENG |
| 臺大學術典藏 |
2018-09-10T09:25:19Z |
Study on 50nm Gate Length of Ga2O3/GaN Nanowire Field Effect Transistor
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Chi-Kang Li,;Jeng-Wei Yu,;Lung-Han Peng,;Yuh-Renn Wu,; Chi-Kang Li,; Jeng-Wei Yu,; Lung-Han Peng,; Yuh-Renn Wu,; LUNG-HAN PENG |
| 臺大學術典藏 |
2018-09-10T09:22:27Z |
Short channel effects on gallium nitride/gallium oxide nanowire transistors
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Yu, J.-W.; Yeh, P.-C.; Wang, S.-L.; Wu, Y.-R.; Mao, M.-H.; Lin, H.-H.; Peng, L.-H.; MING-HUA MAO; HAO-HSIUNG LIN; LUNG-HAN PENG; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T09:17:37Z |
Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells
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Lang, J. R.; Young, N. G.; Farrell, R. M.; Wu, Y. -R.; Speck, J. S.; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T09:17:37Z |
Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure
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Wu, Yuh-Renn; Shivaraman, Ravi; Wang, Kuang-Chung; Speck, James S.; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T09:17:36Z |
Thin 3D Multiplication Regions in Plasmonically Enhanced Nanopillar Avalanche Detectors
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Senanayake, Pradeep; Hung, Chung-Hong; Farrell, Alan; Ramirez, David A.; Shapiro, Joshua; Li, Chi-Kang; Wu, Yuh-Renn; Hayat, Majeed M.; Huffaker, Diana L.; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T09:17:36Z |
Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs
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Li, Chi-Kang; Wu, Yuh-Renn; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T09:17:36Z |
Study of optical anisotropy in nonpolar and semipolar AlGaN quantum well deep ultraviolet light emission diode
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Wang, Chang-Pei; Wu, Yuh-Renn; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T08:47:03Z |
Scaling Performance Study of Ga2O3/GaN Nanowire Field Effect Transistor with 3D Finite Element Solver
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Chi-Kang Li,; Jeng-Wei Yu,; Lung-Han Peng,; Yuh-Renn Wu,; LUNG-HAN PENG |
| 臺大學術典藏 |
2018-09-10T08:42:13Z |
Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays
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Liang-Yi Chen; Hung-Hsun Huang; Chun-Hsiang Chang; Ying-Yuan Huang; Yuh-Renn Wu; JianJang Huang; JIAN-JANG HUANG; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T08:42:13Z |
Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface Texturing
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Yun-Wei Cheng; Szu-Chieh Wang; Ying-Yuan Huang; Chun-Hsiang Chang; Sheng-Chieh Yang; Liang-Yi Chen; Min-Yung Ke; Chi-Kang Li; Yuh-Renn Wu; JianJang Huang; Yu-Hsuan Sun; JIAN-JANG HUANG; YUH-RENN WUet al. |
| 臺大學術典藏 |
2018-09-10T08:35:25Z |
Study of thermoelectric properties of indium nitride nanowire
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Huang, Hung-Hsun;Lu, I. Lin;Wu, Yuh-Renn; Huang, Hung-Hsun; Lu, I. Lin; Wu, Yuh-Renn; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T08:35:25Z |
Electrical properties of modulation-doped rf-sputtered polycrystalline MgZnO/ZnO heterostructures
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Chin, H-A;Cheng, I-C;Li, C-K;Wu, Y-R;Chen, J. Z.;Lu, W-S;Lee, W-L; Chin, H-A; Cheng, I-C; Li, C-K; Wu, Y-R; Chen, J. Z.; Lu, W-S; Lee, W-L; I-CHUN CHENG; JIAN-ZHANG CHEN; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T08:35:25Z |
Transport properties of gallium nitride nanowire metal-oxide-semiconductor transistor
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Yu, J. W.;Li, C. K.;Chen, C. Y.;Wu, Y. R.;Chou, L. J.;Peng, L. H.; Yu, J. W.; Li, C. K.; Chen, C. Y.; Wu, Y. R.; Chou, L. J.; Peng, L. H.; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T08:15:11Z |
Strain-enhanced photoluminescence from Ge direct transition
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Cheng, T.-H.;Peng, K.-L.;Ko, C.-Y.;Chen, C.-Y.;Lan, H.-S.;Wu, Y.-R.;Liu, C.W.;Tseng, H.-H.; Cheng, T.-H.; Peng, K.-L.; Ko, C.-Y.; Chen, C.-Y.; Lan, H.-S.; Wu, Y.-R.; Liu, C.W.; Tseng, H.-H.; CHEE-WEE LIU; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T08:14:35Z |
75GHz Ga2O3/{GaN} Single Nanowire Metal- Oxide-Semiconductor Field-Effect Transistors
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Jeng-Wei Yu;Yuh-Renn Wu;Jian-Jang Huang;Lung-Han Peng; Jeng-Wei Yu; Yuh-Renn Wu; Jian-Jang Huang; Lung-Han Peng; JIAN-JANG HUANG; LUNG-HAN PENG |
| 臺大學術典藏 |
2018-09-10T08:14:35Z |
100GHz depletion-mode Ga$\\less$inf$\\greater$2$\\less$/inf$\\greater$O$\\less$inf$\\greater$3$\\less$/inf$\\greater$/{GaN} single nanowire {MOSFET} by photo-enhanced chemical oxidation method
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Jeng-Wei Yu;Yuh-Renn Wu;Jian-Jang Huang;Lung-Han Peng; Jeng-Wei Yu; Yuh-Renn Wu; Jian-Jang Huang; Lung-Han Peng; JIAN-JANG HUANG |
| 臺大學術典藏 |
2018-09-10T08:08:58Z |
Optical polarization anisotropy of tensile strained InGaN/AlInN quantum wells for TM mode lasers
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Dang, Po-Yuan;Wu, Yuh-Renn; Dang, Po-Yuan; Wu, Yuh-Renn; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T08:08:58Z |
Abnormal polarization switching phenomenon in a-plane Al(x)Ga(1-x)N
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Huang, Huei-Min;Huang, Hung-Hsun;Wu, Yuh-Renn;Lu, Tien-Chang; Huang, Huei-Min; Huang, Hung-Hsun; Wu, Yuh-Renn; Lu, Tien-Chang; YUH-RENN WU |
Showing items 66-90 of 108 (5 Page(s) Totally)
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