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Institution Date Title Author
國立中山大學 2006 Unintentionally doped InN grown onto atomically flat AlN intermediate layer using plasma-assisted molecular beam epitaxy K.R. Wang;L.W. Tu;S.J. Lin;Y.L. Chen;Z.W. Jiang;M. Chen;C.L. Hsiao;K.H. Cheng;J.W. Yeh;S.K. Chen
國立中山大學 2005 Polycrystalline to Single-Crystalline InN Grown on Si(111) Substrates by Plasma-Assisted Molecular-Beam Epitaxy C.L. Hsiao;L.W. Tu;M. Chen;Z.W. Jiang;N.W. Fan;Y.J. Tu;K.R. Wang

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