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Showing items 21-24 of 24 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:09:06Z |
High efficiency light emitting diode with anisotropically etched GaN-sapphire interface
|
Lo, M. H.; Tu, P. M.; Wang, C. H.; Hung, C. W.; Hsu, S. C.; Cheng, Y. J.; Kuo, H. C.; Zan, H. W.; Wang, S. C.; Chang, C. Y.; Huang, S. C. |
| 國立交通大學 |
2014-12-08T15:08:14Z |
Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes
|
Lo, M. -H.; Tu, P. -M.; Wang, C. -H.; Cheng, Y. -J.; Hung, C. -W.; Hsu, S. -C.; Kuo, H. -C.; Zan, H. -W.; Wang, S. -C.; Chang, C. -Y.; Liu, C. -M. |
| 淡江大學 |
2009-12 |
Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes
|
Lo, M.-H.; Tu, P.-M.; Wang, C.-H.; Cheng, Y.-J.; Hung, C.-W.; Hsu, S.-C.; Kuo, H.-C.; Zan, H.-W.; Wang, S.-C.; Chang, C.-Y.; Liu, C.-M. |
| 淡江大學 |
2009-07 |
High efficiency light emitting diode with anisotropically etched GaN-sapphire interface
|
Lo, M. H.; Tu, P. M.; Wang, C. H.; Hung, C. W.; Hsu, S. C.; Cheng, Y. J.; Kuo, H. C.; Zan, H. W.; Wang, S. C.; Chang, C. Y.; Huang, S. C. |
Showing items 21-24 of 24 (1 Page(s) Totally)
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