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Showing items 1-10 of 17 (2 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:45:10Z |
Dimensional effects on the drain current of n- and p-channel polycrystalline silicon thin film transistors
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Shih, PS; Zan, HW; Chang, TC; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:44:56Z |
Dimensional effects on the reliability of polycrystalline silicon thin-film transistors
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Zan, HW; Shih, PS; Chang, TC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:42:17Z |
Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors
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Peng, DZ; Chang, TC; Zan, HW; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:41:56Z |
A W-spacer GOLD TFT with high performance and high reliability
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Zan, HW; Peng, DZ; Shih, PS; Chang, TC; Liu, PT; Chang, CY |
| 國立交通大學 |
2014-12-08T15:41:56Z |
Comparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistors
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Peng, DZ; Zan, HW; Shih, PS; Chang, TC; Lin, CW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:41:38Z |
Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain
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Peng, DZ; Chang, TC; Shih, PS; Zan, HW; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:41:27Z |
Analysis of narrow width effects in polycrystalline silicon thin film transistors
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Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:40:35Z |
A study of parasitic resistance effects in thin-channel polycrystalline silicon TFTs with tungsten-clad source/drain
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Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Kuo, PY; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:39:55Z |
Short-channel poly-Si thin-film transistors with ultrathin channel and self-aligned tungsten-clad source/drain
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Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Kuo, PY; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:39:11Z |
High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure
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Wu, YC; Chang, TC; Chang, CY; Chen, CS; Tu, CH; Liu, PT; Zan, HW; Tai, YH |
Showing items 1-10 of 17 (2 Page(s) Totally)
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