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"zeng x f"
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| 國立成功大學 |
2013 |
Improving Light Output Power of AlInGaP-Based LEDs Using GaP Nanorods Prepared by SILAR Method
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Zeng, X. F.; Shei, S. C.; Chang, S. J. |
| 國立成功大學 |
2013 |
SiO2 Nanopillars on Microscale Roughened Surface of GaN-Based Light-Emitting Diodes by SILAR-Based Method
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Zeng, X. F.; Shei, S. C.; Chang, S. J. |
| 國立成功大學 |
2013 |
Enhancement of Output Power for GaN-Based LEDs by Treatments of Ar Plasma on p-GaN Surface
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Zeng, X. F.; Shei, S. C.; Lo, H. M.; Chang, S. J. |
| 國立成功大學 |
2012 |
GaN-Based LEDs with Nano-Patterns by Contact-Transferred and Mask-Embedded Lithography and Cl-2/N-2 Plasma Etching
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Zeng, X. F.; Shei, S. C.; Chang, S. J. |
| 國立成功大學 |
2011-06 |
AlGaInP-Based LEDs with a p(+)-GaP Window Layer and a Thermally Annealed ITO Contact
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Lo, H. M.; Shei, S. C.; Zeng, X. F.; Chang, Shoou-Jinn; Lin, Hsieh-Yen |
| 國立成功大學 |
2011-06 |
AlGaInP-based LEDs with p+-GaP window layer and a thermally annealed ITO contact
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Lo,H.-M.;Shei, S.-C.;Zeng, X- F.;Chang, Shoou-Jinng;Lin, Hsieh-Yen |
| 國立成功大學 |
2011 |
Postannealing Effect on ITO/p(+)-GaP with a Diffused Layer
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Lo, H. M.; Shei, S. C.; Zeng, X. F.; Chang, S. J.; Lin, H. Y. |
| 國立成功大學 |
2011 |
Postannealing effect on ITO/p+-GaP with a diffused layer
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Lo, H.-M.;Shei, S.-C.;Zeng, X.-F.;Chang,S.-J.;Lin, H.-Y. |
| 國立成功大學 |
2009-04-15 |
GaN MSM Photodetectors With a Semi-Insulating Mg-Doped AlInN Cap Layer
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Weng, W. Y.; Chang, Shoou-Jinn; Lai, W. C.; Hsueh, T. J.; Shei, Shih-Chang; Zeng, X. F.; Wu, S. L.; Hung, S. C. |
| 實踐大學 |
2009 |
GaN MSM Photodetectors With a Semi-Insulating Mg-Doped AlInN Cap Layer
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Weng, W.Y.;Chang, S.J.;Lai, W.C.;Hsueh, T.J.;Shei, S.C.;Zeng, X.F.;Wu, S.L.;Hung, S.C. |
| 國立成功大學 |
2009 |
GaN MSM Photodetectors with a Semi-Insulating AlInN Cap Layer and Sputtered ITO Transparent Electrodes
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Weng, W. Y.; Chuang, Ricky W.; Chang, Shoou-Jinn; Lai, W. C.; Hsueh, T. J.; Shei, Shih-Chang; Zeng, X. F.; Wu, S. L. |
Showing items 1-11 of 11 (1 Page(s) Totally)
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