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Showing items 248326-248350 of 2333070 (93323 Page(s) Totally)
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Institution	Date	Title	Author
臺大學術典藏	2019-12-27T07:49:56Z	GaN metal oxide semiconductor field effect transistors	Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Schurman, M.J.; Lothian, J.R.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:56Z	Passivation of GaAs using (Ga2O3)1 - x(Gd2O3)x, 0?x?1.0 films	Kwo, J.; Murphy, D.W.; Hong, M.; Opila, R.L.; Mannaerts, J.P.; Sergent, A.M.; Masaitis, R.L.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:56Z	Demonstration of submicron depletion-mode GaAs MOSFET's with negligible drain current drift and hysteresis	Wang, Y.C.; Hong, M.; Kuo, J.M.; Mannaerts, J.P.; Kwo, J.; Tsai, H.S.; Krajewski, J.J.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:54Z	Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy	Lay, T.S.;Huang, K.H.;Hung, W.H.;Hong, M.;Kwo, J.;Mannaerts, J.P.; Lay, T.S.; Huang, K.H.; Hung, W.H.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:54Z	Properties of high 庥 gate dielectrics Gd2O3 and Y2O3 for Si	Rosamilia, J.M.; MINGHWEI HONG; Krautter, H.W.; Sergnt, A.M.; Krajewski, J.J.; Boone, T.; Lay, T.S.; Mannaerts, J.P.; Sapjeta, B.J.; Muller, D.A.; Chu, S.N.G.; Opila, R.L.; Chabal, Y.J.; Queeney, K.L.; Hong, M.; Kortan, A.R.; Kwo, J.; Kwo, J.;Hong, M.;Kortan, A.R.;Queeney, K.L.;Chabal, Y.J.;Opila, R.L.;Muller, D.A.;Chu, S.N.G.;Sapjeta, B.J.;Lay, T.S.;Mannaerts, J.P.;Boone, T.;Krautter, H.W.;Krajewski, J.J.;Sergnt, A.M.;Rosamilia, J.M.
臺大學術典藏	2019-12-27T07:49:54Z	C-V and G-V characterisation of Ga2O3(Gd2O3)/GaN capacitor with low interface state density	Lay, T.S.;Liu, W.D.;Hong, M.;Kwo, J.;Mannaerts, J.P.; Lay, T.S.; Liu, W.D.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:54Z	New phase formation of Gd2O3films on GaAs(100)	Kortan, A.R.; Hong, M.; Kwo, J.; Mannaerts, J.P.; Krajewski, J.J.; Kopylov, N.; Steiner, C.; Bolliger, B.; Erbudak, M.; MINGHWEI HONG; Kortan, A.R.;Hong, M.;Kwo, J.;Mannaerts, J.P.;Krajewski, J.J.;Kopylov, N.;Steiner, C.;Bolliger, B.;Erbudak, M.
臺大學術典藏	2019-12-27T07:49:53Z	Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces	Lay, T.S.;Hong, M.;Kwo, J.;Mannaerts, J.P.;Hung, W.H.;Huang, D.J.; Lay, T.S.; Hong, M.; Kwo, J.; Mannaerts, J.P.; Hung, W.H.; Huang, D.J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:53Z	Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3 ) as gate dielectric	Ng, K.; Bude, J.; MINGHWEI HONG; Yang, B.;Ye, P.D.;Kwo, J.;Frei, M.R.;Gossmann, H.-J.L.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.;Bude, J.; Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M.
臺大學術典藏	2019-12-27T07:49:53Z	Structure of Gd2O3 films epitaxially grown on GaAs(100) and GaN(0001) surfaces	Fl?ckiger, T.;Erbudak, M.;Hensch, A.;Weisskopf, Y.;Hong, M.;Kortan, A.R.; Fl?ckiger, T.; Erbudak, M.; Hensch, A.; Weisskopf, Y.; Hong, M.; Kortan, A.R.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:53Z	Electrical characteristics of ultrathin Pt/Y2O3/Si capacitor with rapid post-metallisation annealing	Lay, T.S.;Liu, W.D.;Kwo, J.;Hong, M.;Mannaerts, J.P.; Lay, T.S.; Liu, W.D.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:51Z	Advances in high 庥 gate dielectrics for Si and III-V semiconductors	Kwo, J.;Hong, M.;Busch, B.;Muller, D.A.;Chabal, Y.J.;Kortan, A.R.;Mannaerts, J.P.;Yang, B.;Ye, P.;Gossmann, H.;Sergent, A.M.;Ng, K.K.;Bude, J.;Schulte, W.H.;Garfunkel, E.;Gustafsson, T.; Kwo, J.; Hong, M.; Busch, B.; Muller, D.A.; Chabal, Y.J.; Kortan, A.R.; Mannaerts, J.P.; Yang, B.; Ye, P.; Gossmann, H.; Sergent, A.M.; Ng, K.K.; Bude, J.; Schulte, W.H.; Garfunkel, E.; Gustafsson, T.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:51Z	GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition	Ye, P.D.;Wilk, G.D.;Kwo, J.;Yang, B.;Gossmann, H.-J.L.;Frei, M.;Chu, S.N.G.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.K.;Bude, J.; Ye, P.D.; Wilk, G.D.; Kwo, J.; Yang, B.; Gossmann, H.-J.L.; Frei, M.; Chu, S.N.G.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:51Z	Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3 ) as gate dielectric	Yang, B.;Ye, P.D.;Kwo, J.;Frei, M.R.;Gossmann, H.-J.L.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.;Bude, J.; Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.; Bude, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:50Z	Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor	Lay, T.S.;Liao, Y.Y.;Liu, W.D.;Lai, Y.H.;Hung, W.H.;Kwo, J.;Hong, M.;Mannaerts, J.P.; Lay, T.S.; Liao, Y.Y.; Liu, W.D.; Lai, Y.H.; Hung, W.H.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:50Z	GaAs-based metal-oxide semiconductor field-effect transistors with Al 2 O 3 gate dielectrics grown by atomic layer deposition	Ye, P.D.; Wilk, G.D.; Yang, B.; Kwo, J.; Gossmann, H.-J.L.; Frei, M.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:50Z	MBE-grown high 庥 gate dielectrics of HfO 2 and (Hf-Al)O 2 for Si and III-V semiconductors nano-electronics	Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; Hong, M.; Kwo, J.; Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:50Z	Thin single-crystal Sc2O3 films epitaxially grown on Si (1 1 1) - Structure and electrical properties	Chen, C.P.; Hong, M.; Kwo, J.; Cheng, H.M.; Huang, Y.L.; Lin, S.Y.; Chi, J.; Lee, H.Y.; Hsieh, Y.F.; Mannaerts, J.P.; Chen, C.P.; Hong, M.; Kwo, J.; Cheng, H.M.; Huang, Y.L.; Lin, S.Y.; Chi, J.; Lee, H.Y.; Hsieh, Y.F.; Mannaerts, J.P.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:50Z	Depth-profile study of the electronic structures at Ga2O 3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy	MINGHWEI HONG; Mannaerts, J.P.; Kwo, J.; Hung, W.H.; Hong, M.; Liao, Y.Y.; Lay, T.S.; Mannaerts, J.P.; Kwo, J.; Hong, M.; Hung, W.H.; Lay, T.S.; Liao, Y.Y.
臺大學術典藏	2019-12-27T07:49:49Z	Thermodynamic stability of Ga 2 O 3 (Gd 2 O 3 ) GaAs interface	Huang, Y.L.; Chang, P.; Yang, Z.K.; Lee, Y.J.; Lee, H.Y.; Liu, H.J.; Kwo, J.; Mannaerts, J.P.; Hong, M.; Huang, Y.L.; Chang, P.; Yang, Z.K.; Lee, Y.J.; Lee, H.Y.; Liu, H.J.; Kwo, J.; Mannaerts, J.P.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:49Z	High-quality thin single-crystal 帠-Al 2 O 3 films grown on Si (111)	Wu, S.Y.; Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Lee, W.C.; Huang, Y.L.; Wu, S.Y.; Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Lee, W.C.; Huang, Y.L.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:48Z	Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy	Lay, T.S.; Chang, S.C.; Din, G.J.; Yeh, C.C.; Hung, W.H.; Lee, W.G.; Kwo, J.; Hong, M.; Lay, T.S.; Chang, S.C.; Din, G.J.; Yeh, C.C.; Hung, W.H.; Lee, W.G.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:48Z	Advanced high 庥 dielectrics for nano-electronics - Science and technologies	MINGHWEI HONG; Kwo, J.; Hong, M.; Kwo, J.; Hong, M.
臺大學術典藏	2019-12-27T07:49:48Z	Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3	Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lee, Y.J.; Chang, P.; Kwo, J.; Wu, T.B.; Hong, M.; Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lee, Y.J.; Chang, P.; Kwo, J.; Wu, T.B.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:48Z	Structure of Sc 2O 3 films epitaxially grown on 帢-Al 2O 3 (0001)	Kortan, A.R.; Kopylov, N.; Kwo, J.; Hong, M.; Chen, C.P.; Mannaerts, J.P.; Liou, S.H.; MINGHWEI HONG

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