| 臺大學術典藏 |
2018-09-10T07:07:58Z |
Synthesis of a Photonic Crystal Slab Line-Defect Waveguide with a Designated Group Velocity
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C. A. Lin,;C. C. Yang,;Y. W. Kiang,; C. A. Lin,; C. C. Yang,; Y. W. Kiang,; YEAN-WOEI KIANG |
| 臺大學術典藏 |
2018-09-10T07:07:58Z |
Different View Angle at RGB Optimization in Top-Emission Organic Light-Emitting Device
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Y. T. Chang;J. H. Lee;H. C. Chen;Y. W. Kiang;C. C. Yang; Y. T. Chang; J. H. Lee; H. C. Chen; Y. W. Kiang; C. C. Yang; YEAN-WOEI KIANG |
| 臺大學術典藏 |
2018-09-10T07:07:58Z |
Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells
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T. S. Wang;J. T. Tsai;K. I. Lin;J. S. Hwang;H. H. Lin;L. C. Chou; T. S. Wang; J. T. Tsai; K. I. Lin; J. S. Hwang; H. H. Lin; L. C. Chou; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:58Z |
Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers
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Chen, Cheng-Yuan; Lee, Jia-Ren; Lu, Chien-Rong; Liu, Hsiang-Lin; Sun, Li-Wen; Lin, Hao-Hsiung; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:59Z |
Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy
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T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:59Z |
Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy
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Hsu, Hung-Pin;Huang, Yen-Neng;Huang, Ying-Sheng;Lin, Yang-Ting;Ma, Ta-Chun;Lin, Hao-Hsiung;Tiong, Kwong-Kau;Sitarek, Piotr;Misiewicz, Jan; Hsu, Hung-Pin; Huang, Yen-Neng; Huang, Ying-Sheng; Lin, Yang-Ting; Ma, Ta-Chun; Lin, Hao-Hsiung; Tiong, Kwong-Kau; Sitarek, Piotr; Misiewicz, Jan; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:59Z |
Photoluminescence of InAs0.04P0.67Sb0.29
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Tsai, Gene; Wang, De-Lun; Lin, Hao-Hsiung; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:59Z |
Probing Landau quantization with the presence of insulator-quantum Hall transitions in two-dimensional GaAs electron systems
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Y. H. Chang; C. T. Liang; N. Aoki; Y. Ochiai; C. F. Huang; L. H. Lin; K. A. Cheng; H. H. Cheng; H. H. Lin; J. Y. Wu; S. D. Lin; K. Y. Chen,; CHI-TE LIANG; HAO-HSIUNG LINet al. |
| 臺大學術典藏 |
2018-09-10T07:08:00Z |
Design and fabrication of AlGaAs ambient light detectors
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T. C. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:00Z |
Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics
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Q. Zhuang,;A. Godenir,;A. Krier,;G. Tsai,;H. H. Lin,; Q. Zhuang,; A. Godenir,; A. Krier,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:00Z |
Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance
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S. A. Cripps; T. J. C. Hosea; A. Krier; V. Smirnov; P. J. Batty; Q. D. Zhuang; H. H. Lin; P. W. Liu; G. Tsai; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:00Z |
Probing insulator-quantum Hall transitions near the onset of Landau quantization in GaAs/AlGaAs heterostructure
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Y. H. Chang; C. T. Liang; N. Aoki; Y. Ochiai; C. F. Huang; L. H. Lin; K. A. Cheng; H. H. Cheng; H. H. Lin; S. D. Lin; K. Y. Chen,; HAO-HSIUNG LINet al. |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Origin of the annealing-induced blue-shift in GaAsSbN
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Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
GaAsSbN/GaAs long wavelength PIN detectors
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C. K. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Dilute nitride GaAsSbN grown by gas source molecular beam epitaxy
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H. H. Lin; T. C. Ma; Y. T. Lin; C. K. Chen; T. Y. Chen; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Band alignment of InAsSb/InAsPSb quantum well
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C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics
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Q. Zhuang,;A. Godenir,;A. Krier, G. Tsai,;H. H. Lin,; Q. Zhuang,; A. Godenir,; A. Krier, G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Band alignment of InAsSb/InAsPSb quantum wells
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C. J. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Effect of annealing on the electrical and optical properties of dilute nitride GaAsSbN
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S. P. Wang;T. C. Ma;Y. T. Lin;H. H. Lin; S. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Band structure of dilute nitride GaAsSbN
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Y. T. Lin;T. C. Ma;T. Y. Chen;H. H. Lin; Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Photoluminescence study of InAsPSb epilayers grown on GaAs substrates
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Y. C. Chou,;G. Tsai,;H. H. Lin,; Y. C. Chou,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Effect of adjacent quantum dots on the characteristics of GaAsSb/GaAs type-II quantum well lasers
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Y. R. Lin;J. H. Chu;H. H. Lin; Y. R. Lin; J. H. Chu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Band alignment and valence band anticrossing model for InAsSb/InAsPSb heterojunction
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C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:02Z |
A full wave analysis of microstrip lines by variational conformal mapping technique
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C. Shih;R. B. Wu;S. K. Jeng;C. H. Chen; C. Shih; R. B. Wu; S. K. Jeng; C. H. Chen; RUEY-BEEI WU |
| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Exploiting structure periodicity and symmetry in capacitance calculations for three-dimensional multiconductor systems
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R. B. Wu;L. L. Wu; R. B. Wu; L. L. Wu; RUEY-BEEI WU |
