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显示项目 1976061-1976070 / 2346410 (共234641页)
<< < 197602 197603 197604 197605 197606 197607 197608 197609 197610 197611 > >>
每页显示[10|25|50]项目
| 臺大學術典藏 |
2018-09-10T05:52:20Z |
Improvement in electrical characteristics of high- k Al2O 3 gate dielectric by field-assisted nitric oxidation
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Hwu, J.-G.; JENN-GWO HWU; Chuang, K.-C. |
| 臺大學術典藏 |
2018-09-10T05:52:20Z |
Impact of strain-temperature stress on ultrathin oxide
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Tung, C.-W.; Yang, Y.-L.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:20Z |
Thin-gate oxides prepared by pure water anodization followed by rapid thermal densification
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Jeog, M.-J.;Hwu, J.-G.; Jeog, M.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
Rapid thermal post-metallization annealing effect on thin gate oxides
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Jeng, M.-J.;Lin, H.-S.;Hwu, J-G.; Jeng, M.-J.; Lin, H.-S.; Hwu, J-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
Metal-oxide-semiconductor solar cells with silicon dioxide prepared by liquid-phase deposition method
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Shen, Y.-P.;Hwu, J.-G.; Shen, Y.-P.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
Enhanced nitrogen incorporation and improved breakdown endurance in nitrided gate oxides prepared by anodic oxidation followed by rapid thermal nitridation in N2O
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Jeng, M.-J.;Hwu, J.-G.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
Application of irradiation-then-nitridation to improve the radiation hardness in MOS gate dielectrics
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Lee, K.-C.;Hwu, J.-G.; Lee, K.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
The effect of postoxidation cooling in oxygen on the interface property of MOS capacitors
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Hwu, J.-G.;Chang, J.-J.;Wang, W.-S.; Hwu, J.-G.; Chang, J.-J.; Wang, W.-S.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:22Z |
Relationship between mobile charges and interface trap states in silicon mos capacitors
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Hwu, J.-G.;Wang, W.-S.;Chiou, Y.-L.; Hwu, J.-G.; Wang, W.-S.; Chiou, Y.-L.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:22Z |
Effect of interface traps related to mobile charges on silicon n-channel metal/oxide/semiconductor field effect transistors determined by a charge-temperature technique
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Hwu, J.G.;Lin, C.M.;Wang, W.S.; Hwu, J.G.; Lin, C.M.; Wang, W.S.; JENN-GWO HWU |
显示项目 1976061-1976070 / 2346410 (共234641页)
<< < 197602 197603 197604 197605 197606 197607 197608 197609 197610 197611 > >>
每页显示[10|25|50]项目
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