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Showing items 467666-467675 of 2349007 (234901 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:05:38Z |
HIGH BREAKDOWN P-CHANNEL INSB MOSFET
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TU, SL; LAN, WH; CHIOU, TS; YANG, SJ; HUANG, KF |
| 國立臺灣師範大學 |
2015-06-30T09:22:41Z |
High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
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Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min |
| 國立臺灣師範大學 |
2016-01-21T12:48:11Z |
High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
|
Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min |
| 國立臺灣師範大學 |
2016-01-21T12:48:11Z |
High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
|
Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min |
| 國立臺灣師範大學 |
2016-01-21T12:48:11Z |
High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
|
Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min |
| 國立臺灣海洋大學 |
2014 |
High Breakdown Voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN Quantum-Well Electron-Blocking-Layers
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Ya-Ju Lee; Yung-Chi Yao; Chun-Ying Huang; Tai-Yuan Lin; Li-Lien Cheng; Ching-Yun Liu; Mei-Tan Wang; Jung-Min Hwang |
| 臺大學術典藏 |
1994 |
High Breakdown Voltage InSb P-Channel MOSFET Prepared by Photo-Enhanced Chemical Vapor Deposition
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Liu, B. D.; Liu, Kou-Chen; Sun, Tai-Ping; Lee, Si-Chen; Yang, Seng-Jenn; Liu, B. D.; 李嗣涔; Liu, Kou-Chen; Sun, Tai-Ping; 楊聲震; Lee, Si-Chen; Liu, Kou-Chen; Sun, Tai-Ping; Yang, Seng-Jenn |
| 國立臺灣大學 |
1994 |
High Breakdown Voltage InSb P-Channel MOSFET Prepared by Photo-Enhanced Chemical Vapor Deposition
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Liu, B. D.; 李嗣涔; Liu, Kou-Chen; Sun, Tai-Ping; 楊聲震; Liu, B. D.; Lee, Si-Chen; Liu, Kou-Chen; Sun, Tai-Ping; Yang, Seng-Jenn |
| 臺大學術典藏 |
2018-09-10T09:22:35Z |
High breakdown voltage schottky gating of doped Si/SiGe 2DEG systems enabled by suppression of phosphorus surface segregation
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Huang, C.-T.; Li, J.-Y.; Sturm, J.C.; JIUN-YUN LI |
| 國立交通大學 |
2014-12-08T15:03:07Z |
HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(+)-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING
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LIOU, BW; LEE, CL; LEI, TF |
Showing items 467666-467675 of 2349007 (234901 Page(s) Totally)
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