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Institution	Date	Title	Author
國立交通大學	2014-12-08T15:17:34Z	(In0.52Al0.48)(1-x)MnxAs muted magnetic semiconductor grown on InP substrates	Lee, WN; Chen, YF; Huang, JH; Guo, XJ; Kuo, CT; Chin, TS; Ku, HC
國立交通大學	2017-04-21T06:49:32Z	In0.11Ga0.89N-based p-i-n photodetector	Su, Y. K.; Lee, H. C.; Lin, J. C.; Huang, K. C.; Lin, W. J.; Li, T. C.; Chang, K. J.
臺大學術典藏	2019-03-11T08:02:05Z	In0.18Al0.82N/AlN/GaN HEMT on Si with Hybrid Ohmic and Schottky Source/Drain Solid State Electronics	P.-G. Chen; M. Tang; M. H. Lee; M. H. Lee;M. Tang;P.-G. Chen;M. H.Liao; M. H.Liao
臺大學術典藏	2020-01-13T08:22:43Z	In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact	Chen, P.-G.; Tang, M.; Liao, M.-H.; Lee, M.H.; MING-HAN LIAO
國立成功大學	2003-11	In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer	Wu, Long; Chang, Shoou-Jinn; Su, Yan-Kuin; Chuang, Ricky Wen-kuei; Hsu, Y. P.; Kuo, Chih-Hung; Lai, W. C.; Wen, Ten-Chin; Tsai, J. M.; Sheu, Jinn-Kong
國立成功大學	2000-05-22	In0.34Al0.66As0.85Sb0.15/delta(n(+))-InP heterostructure field-effect transistors	Lin, Yu-Shyan; Hsu, Wei-Chou; Yeh, Chia-Yen; Shieh, Her-Ming
國立成功大學	2005-04	In0.37Ga0.63N metal-semiconductor-metal photodetectors with recessed electrodes	Yu, Chia-Lin; Chen, C. H.; Chang, Sou-Jian; Su, Yan-Kuin; Chen, S. C.; Chang, Ping-Chuan; Chen, Po-Chang; Wu, M. H.; Chen, H. C.; Su, K. C.
臺大學術典藏	2018-09-10T08:17:48Z	In0.46Ga0.54P0.98Sb0.02/GaAs: Its band offset and application to heterojunction bipolar transistor	Y. C. Chin,;H. H. Lin,;C. H. Huang,;M. N. Tseng,; Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN
國立交通大學	2014-12-08T15:04:26Z	IN0.49GA0.51P/GAAS HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION	FENG, MS; LIN, KC; WU, CC; CHEN, HD; SHANG, YC
國立彰化師範大學	2009	In0.49Ga0.51P/GaAs/Ge三接面串接式太陽能電池之模擬與分析	畢無量

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