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Institution Date Title Author
國立交通大學 2019-04-02T05:58:44Z InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Trinh, Hai-Dang; Miyamoto, Yasuyuki
臺大學術典藏 2018-09-10T05:58:39Z InAs-GaAs quantum dots: From growth to lasers Ledentsov, N.N.; Grundmann, M.; Kirstaedter, N.; Schmidt, O.G.; Mao, M.H.; Ustinov, V.M.; Egorov, A.Yu.; Zhukov, A.E.; Kopev, P.S.; Alferov, Zh.I.; Ruvimov, S.S.; G\\osele, U.; Heydenreich, J.; Bimberg, D.; MING-HUA MAOet al.
臺大學術典藏 2018-09-10T05:58:39Z InAs-GaAs quantum pyramid lasers: In situ growth, radiative lifetimes and polarization properties Ledentsov, N.N.; Grundmann, M.; Kirstaedter, N.; Schmidt, O.G.; Mao, M.H.; Ustinov, V.M.; Egorov, A.Yu.; Zhukov, A.E.; Kop\\'ev, P.S.; Alferov, Zh.I.; Ruvimov, S.S.; G\\osele, U.; Heydenreich, J.; Bimberg, D.; MING-HUA MAOet al.
國立臺灣大學 2002 InAs/GaAs quantum dot infrared photodetector (QDIP) with double Al0.3Ga0.7As blocking barriers Tang, Shiang-Feng; Lin, Shih-Yen; Lee, Si-Chen
國立交通大學 2014-12-08T15:40:15Z InAs/GaAs quantum dot infrared photodetectors with different growth temperatures Wang, SY; Chen, SC; Lin, SD; Lin, CJ; Lee, CP
臺大學術典藏 2018-09-10T06:31:09Z InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition MING-HUA MAO; Werner, P.; Kosogov, A.O.; Bimberg, D.; Grundmann, M.; Mao, M.-H.; Kirstaedter, N.; Krost, A.; Heinrichsdorff, F.
國立交通大學 2014-12-08T15:18:52Z InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd : YVO4 laser at 1342 nm Su, KW; Lai, HC; Li, A; Chen, YF; Huang, KE
國立交通大學 2014-12-08T15:19:37Z InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-mu m lasers Lai, HC; Li, A; Su, KW; Ku, ML; Chen, YF; Huang, KF
國立彰化師範大學 1997-03 InAs/GaAs Short-period Strained-layer Superlattices Grown on GaAs as Spatial Light Modulators: Uniformity Measurements Huang, Man-Fang; Elsa Garmire; Tom Hasenberg; Steffen Koehler
國立交通大學 2014-12-12T02:44:03Z InAs/GaAs自聚式量子點掺入銻與氮之特性研究 黃任鋒; Ren-Fong Huang; 陳振芳; Jenn-Fang Chen
國立高雄應用科技大學 2008 InAs/GaAs量子點及量子點分子中之激子衰變與拉比震盪研究 洪冠明
國立高雄應用科技大學 2009 InAs/GaAs量子點及量子點分子中之激子衰變與拉比震盪研究 洪冠明
國立高雄應用科技大學 2010 InAs/GaAs量子點及量子點分子中之激子衰變與拉比震盪研究 洪冠明
國立交通大學 2014-12-12T02:25:41Z InAs/GaAs量子點電容-電壓和深層能階暫態頻譜之電性研究 石昇弘; S. H. Shih; 陳振芳; J. F. Chen
國立交通大學 2014-12-08T15:03:41Z InAs/In(1-x)Ga(x)As Composite Channel High Electron Mobility Transistors for High Speed Applications Chang, Edward Yi; Kuo, Chien-I; Hsu, Heng-Tung; Chang, Chia-Yuan
元智大學 2008-10 InAs/In1-xGaxAs Composite Channel High Electron Mobility Transistors for High Speed Applications 許恒通; Edward Yi Chang; Chien-I Kuo; Chia-Yuan Chang
元智大學 2008-10 InAs/In1-xGaxAs Composite Channel High Electron Mobility Transistors for High Speed Applications 許恒通; Edward Yi Chang; Chien-I Kuo; Chia-Yuan Chang
元智大學 2008-10 InAs/In1-xGaxAs Composite Channel High Electron Mobility Transistors for High Speed Applications 許恒通; Edward Yi Chang; Chien-I Kuo; Chia-Yuan Chang
臺大學術典藏 2018-09-10T04:35:09Z InAs/InGaAs quantum dot laser grown by solid source molecular-beam epitaxy F. Y. Chang,; G. H. Liao,; C. S. Lee,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 Jun-04 InAs/InGaAs quantum dot laser with high ground-state modal gain grown by solid-source molecular-beam epitaxy Chang, Fu-Yu; Lee, Chi-Sen; Liao, Gang-Hua; Lin, Hao-Hsiung; Chang, Fu-Yu; Lee, Chi-Sen; Liao, Gang-Hua; Lin, Hao-Hsiung
國立臺灣大學 2004-06 InAs/InGaAs quantum dot laser with high ground-state modal gain grown by solid-source molecular-beam epitaxy Chang, Fu-Yu; Lee, Chi-Sen; Liao, Gang-Hua; Lin, Hao-Hsiung
國立臺灣大學 2006 InAs/InGaAs/GaAs Coupled Quantum Dot Laser with Predeposited InAs Seed Layer Lee, Chi-Sen; Chang, Fu-Yu; Liu, Day-Shan; Lin, Hao-Hsiung
國立虎尾科技大學 2006 InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer Lee, Chi-Sen;Chang, Fu-Yu;Liu, Day-Shan;Lin, Hao-Hsiung
臺大學術典藏 2018-09-10T06:01:58Z InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T05:26:31Z InAs/InGaAs/GaAs coupled quantum-dot laser C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN
國立交通大學 2014-12-12T01:57:30Z InAs/InGaAs量子點光電容特性 曾國豪; Tseng, Kuo-Hau; 陳振芳; Chen, Jenn-Fang
臺大學術典藏 2018-09-10T03:50:03Z InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m Ding-Kang Shih,; H. H. Lin,; Y. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2001 InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength λ=2.38 μm Shih, Ding-Kang; Lin, Hao-Hsiung; Lin, Y.H.; Shih, Ding-Kang; Lin, Hao-Hsiung; Lin, Y.H.
國立臺灣大學 2001 InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength λ=2.38 μm Shih, Ding-Kang; Lin, Hao-Hsiung; Lin, Y.H.
臺大學術典藏 2018-09-10T03:50:04Z InAsN Grown by Plasma-assisted Gas Source MBE HAO-HSIUNG LIN; T. R. Yang,; T. Y. Chu,; H. H. Lin,; D. K. Shih,
臺大學術典藏 1999-01 InAsN quantum wells grown on InP by gas source MBE J. S. Wang,; H. H. Lin,; L. W. Sung,; G. R. Chen,; HAO-HSIUNG LIN
國立臺灣大學 2003 InAsN/InGaAs/InP quantum well structures for mid-infrared diode lasers Lin, H.H.; Shih, D.K.; Lin, Y.H.; Chiang, K.H.
臺大學術典藏 2018-09-10T04:35:08Z InAsN/InGaAs/InP quantum well structures for mid-infrared diode lasers H.-H. Lin,; D.-K. Shih,; Y.-H. Lin,; K.-H. Chiang,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:13Z InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:01:59Z InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:34:43Z InAsPSb quaternary alloy grown by gas source molecular beam epitaxy Y. T. Lin,; H. H. Lin; HAO-HSIUNG LIN; G. Tsai,; D. L. Wang,; C. E. Wu,; C. J. Wu,
國立臺灣大學 2007 InAsPSb quaternary alloy grown by gas source molecular beam epitaxy Tsai, Gene; Wang, De-Lun; Wu, Chia-En; Wu, Chen-Jun; Lin, Yan-Ting; Lin, Hao-Hsiung
臺大學術典藏 2018-09-10T06:01:59Z InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T08:17:52Z InAsPSb/InAs photodetectors grown by gas source molecular beam epitaxy C. J. Wu,;S. W. Lo,;H. H. Lin,; C. J. Wu,; S. W. Lo,; H. H. Lin,; HAO-HSIUNG LIN
國立交通大學 2014-12-12T02:44:37Z InAsSb/GaAs自聚式量子點之電性研究 黃文鏑; Wen-Di Huang; 陳振芳; J.F.Chen
臺大學術典藏 2018-09-10T15:23:17Z InAsSb/InAsPSb multiple quantum well disk cavities with pedestal structures on a GaSb substrate for mid-infrared whispering-gallery-mode emission beyond 4 μm Lin, Y.-C.;Mao, M.-H.;Wu, C.-J.;Lin, H.-H.; Lin, Y.-C.; Mao, M.-H.; Wu, C.-J.; Lin, H.-H.; MING-HUA MAO; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:15Z InAsSb/InAsPSb multiple quantum wells grown by molecular beam epitaxy C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:34:45Z InAsSb/InAsPSb quantum wells grown by gas source molecular beam epitaxy C. J. Wu,; G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN
國立交通大學 2014-12-12T01:16:45Z InAsSb量子點表面活化及相分離現象以及熱退火影響InAsSb量子點光性電性 黃英子; Ying-tzu Huang; 陳振芳; Jenn-Fang Chen
國立成功大學 2005-06-16 InAs其相關物質量子結構之螢光光譜研究 吳志浩; Wu, Chih-Hao
國立交通大學 2014-12-12T01:29:54Z InAs量子點中缺陷效應影響之量子躍遷機制 傅昱翔; Fu, Yu-Hsiang; 陳振芳; Chen, Jenn-Fang
國立成功大學 2005-06-25 InAs量子點之變溫螢光光譜分析 林松毅; Lin, Sung-I
國立交通大學 2014-12-12T03:06:37Z InAs量子點應力鬆弛所引發缺陷對量子躍遷之影響 汪炎宗; Yan -Zung Wang; 陳振芳; Jenn-Fang Chen
國立交通大學 2014-12-12T01:29:55Z InAs量子點掺入氮之電子放射與捕獲機制研究 吳嘉葳; Wu, Chia-Wei; 陳振芳; Chen, Jenn-Fang
國立交通大學 2018-01-24T07:36:25Z InAs量子點蕭基二極體之導納模擬及照光下的光電壓效應 許昶誌; 陳振芳; Hsu, Chang-Jhih; Chen, Jenn-Fang

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