|
|
Taiwan Academic Institutional Repository >
Browse by Title
|
Showing items 511636-511660 of 2349007 (93961 Page(s) Totally)
<< < 20461 20462 20463 20464 20465 20466 20467 20468 20469 20470 > >>
View [10|25|50] records per page
| 南台科技大學 |
2006 |
InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface
|
李明倫; J. K. Sheu; C. M. Tsai; M. L. Lee; S. C .Shei; W. C. Lai |
| 國立成功大學 |
2011-08 |
InGaN Metal-Semiconductor-Metal Photodetectors With Aluminum Nitride Cap Layers
|
Lee, Kai-Hsuan; Chang, Ping-Chuan; Chang, Shoou-Jinn; Wu, San-Lein |
| 國立成功大學 |
2011 |
InGaN metal-semiconductor-metal photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers
|
Lee, K.-H.;Chang, P.-C.;Chang, S.-J.;Wu, S.-L. |
| 國立成功大學 |
2004-02 |
InGaN metal-semiconductor-metal photodiodes with nanostructures
|
Ji, Liang-Wen; Su, Yan-Kuin; Chang, Shoou-Jinn; Hung, Shang-Chao; Wang, Chun-Kai; Fang, Te-Hua; Tsai, Tzong-Yow; Chuang, Ricky; Su, Wei; Zhong, Jing-Chang |
| 國立彰化師範大學 |
2011 |
InGaN Multiple-quantum Well Light-emitting Diodes with Thin Last Barrier and P-doped Last Barrier
|
Wang, Tsun-Hsin; Chang, Jih-Yuan; Tsai, Miao-Chan; Yen, Sheng-Horng; Kuo, Yen-Kuang |
| 南台科技大學 |
2006-08 |
InGaN p-i-n ultraviolet - A band-pass photodetectors
|
T. K. Ko; S. C. Shei; S. J. Chang; Y. Z. Chiou; R. W. Lin; W. S. Chen; C. F. Shen; C. S. Chang; K. W. Lin |
| 國立成功大學 |
2006-08 |
InGaN p-i-n ultraviolet - A band-pass photodetectors
|
Ko, T. K.; Shei, Shih-Chang; Chang, Shoou-Jinn; Chiou, Yu-Zung; Lin, R. M.; Chen, W. S.; Shen, C. F.; Chang, C. S.; Lin, K. W. |
| 國立成功大學 |
2003-10 |
InGaN quantum dot photodetectors
|
Ji, L. W.; Su, Yan-Kuin; Chang, Shoou-Jinn; Liu, S. H.; Wang, C. K.; Tsai, S. T.; Fang, T. H.; Wu, Long; Xue, Qi-Kun |
| 國立交通大學 |
2014-12-08T15:17:03Z |
InGaN self-assembled quantum dots grown by metal-organic chemical vapour deposition with growth interruption
|
Yao, HH; Lu, TC; Huang, GS; Chen, CY; Liang, WD; Kuo, HC; Wang, SC |
| 國立成功大學 |
2002-06 |
InGaN-AlInGaN multiquantum-well LEDs
|
Lai, Wei-Chih; Chang, Shoou-Jinn; Yokoyam, Meiso; Sheu, Jinn-Kong; Chen, Jone-Fang |
| 國立成功大學 |
2017-07 |
InGaN-based epitaxial films as photoelectrodes for hydrogen generation through water photoelectrolysis and CO2 reduction to formic acid
|
Sheu;J, K.;Liao;P, H.;Huang;T, C.;Chiang;K, J.;Lai;W, C.;Lee;M, L. |
| 國立交通大學 |
2014-12-08T15:25:47Z |
InGaN-based light-emitting diode with undercut side wall
|
Kao, CC; Chu, JT; Huang, HW; Peng, YC; Yu, CC; Hseih, YL; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:06:54Z |
InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates
|
Deng, Dongmei; Yu, Naisen; Wang, Yong; Zou, Xinbo; Kuo, Hao-Chung; Chen, Peng; Lau, Kei May |
| 國立臺灣科技大學 |
2016 |
InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate
|
Ke, W.-C;Lee, F.-W;Chiang, Chiang C.-Y;Liang, Z.-Y;Chen, W.-K;Seong, T.-Y. |
| 國立交通大學 |
2017-04-21T06:55:28Z |
InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate
|
Ke, Wen-Cheng; Lee, Fang-Wei; Chiang, Chih-Yung; Liang, Zhong-Yi; Chen, Wei-Kuo; Seong, Tae-Yeon |
| 國立臺灣科技大學 |
2018 |
InGaN-based light-emitting diodes grown on various aspect ratios of concave nanopattern sapphire substrate
|
Ke W.-C.; Chiang C.-Y.; Son W.; Lee F.-W. |
| 國立交通大學 |
2019-04-02T05:58:50Z |
InGaN-based light-emitting diodes grown on various aspect ratios of concave nanopattern sapphire substrate
|
Ke, Wen-Cheng; Chiang, Chih-Yung; Son, Widi; Lee, Fang-Wei |
| 南台科技大學 |
2022-06 |
InGaN-based light-emitting diodes with Al content graded p-AlxGa1-xN top contact layer
|
Lee, Ming- Lun; Tu, Shang-Ju; Sheu, Jinn-Kong |
| 國立成功大學 |
2022-09 |
InGaN-based light-emitting diodes with Al content graded p-AlxGa1-xN top contact layer
|
Lee;Ming-Lun;Tu;Shang-Ju;Sheu;Jinn-Kong |
| 國立成功大學 |
2012-10-01 |
InGaN-Based Light-Emitting Diodes With an AlGaN Staircase Electron Blocking Layer
|
Chang, Shoou-Jinn; Yu, Sheng-Fu; Lin, Ray-Ming; Li, Shuguang; Chiang, Tsung-Hsun; Chang, Sheng-Po; Chen, Chang-Ho |
| 國立交通大學 |
2014-12-08T15:08:02Z |
InGaN-GaN Light Emitting Diode Performance Improved by Roughening Indium Tin Oxide Window Layer via Natural Lithography
|
Liao, Cheng; Wu, YewChung Sermon |
| 國立臺灣大學 |
2000 |
InGaN-GaN Light Emitting Diodes Grown by Molecular Beam Epitaxy
|
Chang, Chin-An; Wu, E-Tsou; Lai, Fung-Jei; Tsai, Chia-Ming; Hong, Ming-Cheng; Wu, Cheng-Ru; Ho, Ching-Kuo; Liu, Huei-Fen; Feng, Shih-Wei; Liao, Chih-Chih; Yang, C. C. |
| 國立成功大學 |
2005-08 |
InGaN-GaN MQW LEDs with Si treatment
|
Hsu, Y. P.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, S. C.; Tsai, J. M.; Lai, W. C.; Kuo, Chih-Hung; Chang, C. S. |
| 國立成功大學 |
2007-05 |
InGaN-GaN MQW metal-semiconductor-metal photodiodes with semi-insulating Mg-doped GaN cap layers
|
Yu, Chia-Lin; Chuang, Ricky Wenkuei; Chang, Shoou-Jinn; Chang, Ping-Chuan; Lee, K. H.; Lin, J. C. |
| 國立成功大學 |
2002-04 |
InGaN-GaN multiquantum-well blue and green light-emitting diodes
|
Chang, Shoou-Jinn; Lai, Wei-Chih; Su, Yan-Kuin; Chen, Jiann-Fuh; Liu, Chun-Hsing; Liaw, U. H. |
Showing items 511636-511660 of 2349007 (93961 Page(s) Totally)
<< < 20461 20462 20463 20464 20465 20466 20467 20468 20469 20470 > >>
View [10|25|50] records per page
|
