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Showing items 511641-511665 of 2348973 (93959 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:06:54Z |
InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates
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Deng, Dongmei; Yu, Naisen; Wang, Yong; Zou, Xinbo; Kuo, Hao-Chung; Chen, Peng; Lau, Kei May |
| 國立臺灣科技大學 |
2016 |
InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate
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Ke, W.-C;Lee, F.-W;Chiang, Chiang C.-Y;Liang, Z.-Y;Chen, W.-K;Seong, T.-Y. |
| 國立交通大學 |
2017-04-21T06:55:28Z |
InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate
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Ke, Wen-Cheng; Lee, Fang-Wei; Chiang, Chih-Yung; Liang, Zhong-Yi; Chen, Wei-Kuo; Seong, Tae-Yeon |
| 國立臺灣科技大學 |
2018 |
InGaN-based light-emitting diodes grown on various aspect ratios of concave nanopattern sapphire substrate
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Ke W.-C.; Chiang C.-Y.; Son W.; Lee F.-W. |
| 國立交通大學 |
2019-04-02T05:58:50Z |
InGaN-based light-emitting diodes grown on various aspect ratios of concave nanopattern sapphire substrate
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Ke, Wen-Cheng; Chiang, Chih-Yung; Son, Widi; Lee, Fang-Wei |
| 南台科技大學 |
2022-06 |
InGaN-based light-emitting diodes with Al content graded p-AlxGa1-xN top contact layer
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Lee, Ming- Lun; Tu, Shang-Ju; Sheu, Jinn-Kong |
| 國立成功大學 |
2022-09 |
InGaN-based light-emitting diodes with Al content graded p-AlxGa1-xN top contact layer
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Lee;Ming-Lun;Tu;Shang-Ju;Sheu;Jinn-Kong |
| 國立成功大學 |
2012-10-01 |
InGaN-Based Light-Emitting Diodes With an AlGaN Staircase Electron Blocking Layer
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Chang, Shoou-Jinn; Yu, Sheng-Fu; Lin, Ray-Ming; Li, Shuguang; Chiang, Tsung-Hsun; Chang, Sheng-Po; Chen, Chang-Ho |
| 國立交通大學 |
2014-12-08T15:08:02Z |
InGaN-GaN Light Emitting Diode Performance Improved by Roughening Indium Tin Oxide Window Layer via Natural Lithography
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Liao, Cheng; Wu, YewChung Sermon |
| 國立臺灣大學 |
2000 |
InGaN-GaN Light Emitting Diodes Grown by Molecular Beam Epitaxy
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Chang, Chin-An; Wu, E-Tsou; Lai, Fung-Jei; Tsai, Chia-Ming; Hong, Ming-Cheng; Wu, Cheng-Ru; Ho, Ching-Kuo; Liu, Huei-Fen; Feng, Shih-Wei; Liao, Chih-Chih; Yang, C. C. |
| 國立成功大學 |
2005-08 |
InGaN-GaN MQW LEDs with Si treatment
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Hsu, Y. P.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, S. C.; Tsai, J. M.; Lai, W. C.; Kuo, Chih-Hung; Chang, C. S. |
| 國立成功大學 |
2007-05 |
InGaN-GaN MQW metal-semiconductor-metal photodiodes with semi-insulating Mg-doped GaN cap layers
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Yu, Chia-Lin; Chuang, Ricky Wenkuei; Chang, Shoou-Jinn; Chang, Ping-Chuan; Lee, K. H.; Lin, J. C. |
| 國立成功大學 |
2002-04 |
InGaN-GaN multiquantum-well blue and green light-emitting diodes
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Chang, Shoou-Jinn; Lai, Wei-Chih; Su, Yan-Kuin; Chen, Jiann-Fuh; Liu, Chun-Hsing; Liaw, U. H. |
| 國立成功大學 |
2008-05-30 |
InGaN-GaN 多層量子井(MQW)並搭配一層半絕緣Mg摻雜的GaN覆蓋層之金屬-半導體-金屬光檢測器
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莊文魁;余佳霖;張守進 |
| 國立成功大學 |
2004-05 |
InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer
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Chen, C. H.; Chang, Shoou-Jinn; Su, Yan-Kuin |
| 國立成功大學 |
2004-03 |
InGaN/GaN blue light-emitting diodes with self-assembled quantum dots
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Su, Yan-Kuin; Chang, Shoou-Jinn; Ji, L. W.; Chang, C. S.; Wu, L. W.; Fang, T. H.; Lam, K. T. |
| 國立成功大學 |
2003-05 |
InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer
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Wu, L. W.; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, T. Y.; Wen, Ten-Chin; Kuo, C. H.; Lai, W. C.; Sheu, Jinn-Kong; Tsai, J. M.; Chen, S. C.; Huang, B. R. |
| 國立成功大學 |
2002-05 |
InGaN/GaN light emitting diodes activated in O-2 ambient
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Kuo, Chih-Hung; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, Jiann-Fuh; Wu, Liang-Wen; Sheu, Jinn-Kung; Chen, C. H.; Chi, Gou-Chung |
| 國立成功大學 |
2004-04 |
InGaN/GaN light emitting diodes with a lateral current blocking structure
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Wang, Hsin-Chuan; Su, Yan-Kuin; Lin, Chun-Liang; Chen, Wen-Bin; Chen, Shi-Ming |
| 國立成功大學 |
2002-08 |
InGaN/GaN light emitting diodes with a p-down structure
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Su, Yan-Kuin; Chang, Shoou-Jinn; Ko, Chih-Hsin; Chen, Jiann-Fuh; Kuan, Ta-Ming; Lan, Wen-How; Lin, Wen-Jen; Cherng, Y. T.; Webb, James |
| 義守大學 |
2005-12 |
InGaN/GaN light emitting diodes with Ni/Au mesh p-contacts
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Shui-Hsiang Su;Cheng-Chieh Hou;Meiso Yokoyama;Shi-Ming Chen |
| 國立成功大學 |
2003-05 |
InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts
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Lin, Y. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsai, Tzong-Yow; Chang, C. S.; Shei, Shih-Chang; Kuo, C. W.; Chen, S. C. |
| 南台科技大學 |
2003-06 |
InGaN/GaN light emitting diodes with rapid thermal annealed Ni/ITO p-contacts
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Chia-Sheng Chang; Shoou-Jinn Chang; Yan-Kuin Su; Yu-Zung Chiou; Yi-Chao Lin; Yu-Pin Hus; Shih-Chang Shei; Jung-Chin Ke; Hsin-Ming Lo; Shih-Chin. Chen; Chun-Hsing Liu |
| 國立成功大學 |
2003-05 |
InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates
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Hsu, Y. P.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chang, C. S.; Shei, Shih-Chang; Lin, Y. C.; Kuo, C. H.; Wu, L. W.; Chen, S. C. |
| 國立成功大學 |
2003-04 |
InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering
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Chang, C. S.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lin, Y. C.; Hsu, Y. P.; Shei, Shih-Chang; Chen, S. C.; Liu, C. H.; Liaw, U. H. |
Showing items 511641-511665 of 2348973 (93959 Page(s) Totally)
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