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显示项目 227371-227395 / 2346288 (共93852页)
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机构 日期 题名 作者
臺大學術典藏 2010 Bipolar Person Name Identification of Topic Documents Using Principal Component Analysis Chen, Chien-Chin; Wu, Chen-Yuan; Chen, Chien-Chin; Wu, Chen-Yuan
國立交通大學 2014-12-08T15:40:57Z Bipolar photogenerated terahertz radiation in biased photoconductive switches Lin, PI; Luo, CW; Liu, HS; Wu, KH; Juang, JY; Uen, TM; Gou, YS
國立高雄應用科技大學 2012-12 Bipolar resistive RAM characteristics induced by nickel incorporated into silicon oxide dielectrics for IC applications Tsai, T. M.;K. C. Chang;Chang, T. C.;Syu, Y. E.;Chuang, S. L.;Chang, G. W.;Liu, G. R.;Chen, M. C.;Huang, H. C.;Liu, S. K.;Tai, Y. H.;Gan, D. S.;Yang, Y. L.;Young, T. F.;Tseng, B. H.;Chen, K. H.;Tsai, M. J.;C. Ye, H. Wang;Sze, S.M.
國立交通大學 2014-12-08T15:28:27Z Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Chang, Geng-Wei; Liu, Guan-Ru; Chen, Min-Chen; Huang, Hui-Chun; Liu, Shih-Kun; Tai, Ya-Hsiang; Gan, Der-Shin; Yang, Ya-Liang; Young, Tai-Fa; Tseng, Bae-Heng; Chen, Kai-Huang; Tsai, Ming-Jinn; Ye, Cong; Wang, Hao; Sze, Simon M.
國立成功大學 2012-12 Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Chang, Geng-Wei; Liu, Guan-Ru; Chen, Min-Chen; Huang, Hui-Chun; Liu, Shih-Kun; Tai, Ya-Hsiang; Gan, Der-Shin; Yang, Ya-Liang; Young, Tai-Fa; Tseng, Bae-Heng; Chen, Kai-Huang; Tsai, Ming-Jinn; Ye, Cong; Wang, Hao; Sze, Simon M.
國立成功大學 2016-09 Bipolar Resistive Switching Behavior in Sol-Gel MgTiNiOx Memory Device Chang, Yu-Chi; Lee, Ke-Jing; Lee, Cheng-Jung; Wang, Li-Wen; Wang, Yeong-Her
國立成功大學 2018 Bipolar Resistive Switching Characteristics in Flexible Pt/MZT/Al Memory and Ni/NbO2/Ni Selector Structure Lee;Ke-Jing;Chang;Yu-Chi;Lee;Cheng-Jung;Wang;Li-Wen;Wang;Yeong-Her
國立東華大學 2007-11 Bipolar resistive switching characteristics in SrZrO3-based films for RRAM applications 林群傑; Lin, Chun-Chieh; Lin, Chih-Yang ; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:24:05Z Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications Fan, Yang-Shun; Liu, Po-Tsun; Teng, Li-Feng; Hsu, Ching-Hui
國立交通大學 2014-12-08T15:28:06Z Bipolar resistive switching characteristics of Gd2O3 thin film structure Chang, K. M.; Tzeng, W. H.; Liu, K. C.; Chan, Y. C.; Kuo, C. C.
義守大學 2011-05 Bipolar resistive switching characteristics of Gd2O3 thin film structure Kow-Ming Chang;Wen-Hsien Tzeng;Kou-Chen Liu;Yi-Chun Chan;Chun-Chih Kuo
國立成功大學 2016 Bipolar Resistive Switching Characteristics of TaO2 RRAM Hsieh, Wei-Kang; Chang, Shoou-Jinn
國立交通大學 2014-12-08T15:07:53Z Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory Chen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chen, Shih-Ching; Hu, Chih-Wei; Tsai, Chih-Tsung; Sze, Simon M.
國立交通大學 2019-10-05T00:08:42Z Bipolar resistive switching characteristics of tungsten-doped indium-zinc oxide conductive-bridging random access memory Gan, Kai-Jhih; Liu, Po-Tsun; Lin, Sheng-Jie; Ruan, Dun-Bao; Chien, Ta-Chun; Chiu, Yu-Chuan; Sze, Simon M.
國立交通大學 2014-12-08T15:43:58Z Bipolar resistive switching effect in Gd(2)O(3) films for transparent memory application Liu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih
義守大學 2011-07 Bipolar resistive switching effect in Gd2O3 films for transparent memory application Kou-Chen Liu;Wen-Hsien Tzeng;Kow-Ming Chang;Yi-Chun Chan;Chun-Chih Kuo
國立交通大學 2019-04-02T05:59:00Z Bipolar resistive switching effect in Gd2O3 films for transparent memory application Liu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih
國立臺灣科技大學 2014 Bipolar resistive switching in transparent AZO/SiOx/ITO devices Yang, P.-J.;Jou, S.;Chiu, C.-C.
國立交通大學 2014-12-08T15:29:28Z Bipolar resistive switching of chromium oxide for resistive random access memory Chen, Shih-Cheng; Chang, Ting-Chang; Chen, Shih-Yang; Chen, Chi-Wen; Chen, Shih-Ching; Sze, S. M.; Tsai, Ming-Jinn; Kao, Ming-Jer; Huang, Fon-Shan Yeh
臺大學術典藏 2007-06 Bipolar spin switch using Aharonov-Bohm ring with embedded double quantum dots Chen, Kuo-Wei; Liu, Ming-Hao; Chen, Son-Hsien; Chang, Ching-Ray; Chen, Kuo-Wei; Liu, Ming-Hao; Chen, Son-Hsien; Chang, Ching-Ray
國立臺灣大學 2007-06 Bipolar spin switch using Aharonov-Bohm ring with embedded double quantum dots Chen, Kuo-Wei; Liu, Ming-Hao; Chen, Son-Hsien; Chang, Ching-Ray
國立交通大學 2014-12-08T15:29:30Z Bipolar switching characteristics of low-power Geo resistive memory Cheng, C. H.; Chen, P. C.; Liu, S. L.; Wu, T. L.; Hsu, H. H.; Chin, Albert; Yeh, F. S.
南台科技大學 2017-05 Bipolar switching properties and electrical conduction mechanism of manganese oxide RRAM devices Kai-Huang Chen; Ming-Cheng Kao; Shou-Jen Huang; Cheng-Ying Li; Chien-Min Cheng; Sean Wu; Zong-Hsun Wu
朝陽科技大學 2025-04-14 Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices Wang, Yao-Chin; Chen, Kai-Huang; Kao, Ming-Cheng; Chen, Hsin-Chin; Cheng, Chien-Min; Huang, Hong-Xiang; Huang, Kai-Chi; 高銘政
南台科技大學 2023-01 Bipolar Switching Properties of GdOx:SiO2 Thin Film Resistive Random Access Memory Using Co-Sputtering Technology Kai-Huang Chen;Chien-Min Cheng;Na-Fu Wang;Jia-Cheng Zhou;Mei-Li Chen

显示项目 227371-227395 / 2346288 (共93852页)
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