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机构 日期 题名 作者
國立交通大學 2014-12-08T15:28:06Z Bipolar resistive switching characteristics of Gd2O3 thin film structure Chang, K. M.; Tzeng, W. H.; Liu, K. C.; Chan, Y. C.; Kuo, C. C.
義守大學 2011-05 Bipolar resistive switching characteristics of Gd2O3 thin film structure Kow-Ming Chang;Wen-Hsien Tzeng;Kou-Chen Liu;Yi-Chun Chan;Chun-Chih Kuo
國立成功大學 2016 Bipolar Resistive Switching Characteristics of TaO2 RRAM Hsieh, Wei-Kang; Chang, Shoou-Jinn
國立交通大學 2014-12-08T15:07:53Z Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory Chen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chen, Shih-Ching; Hu, Chih-Wei; Tsai, Chih-Tsung; Sze, Simon M.
國立交通大學 2019-10-05T00:08:42Z Bipolar resistive switching characteristics of tungsten-doped indium-zinc oxide conductive-bridging random access memory Gan, Kai-Jhih; Liu, Po-Tsun; Lin, Sheng-Jie; Ruan, Dun-Bao; Chien, Ta-Chun; Chiu, Yu-Chuan; Sze, Simon M.
國立交通大學 2014-12-08T15:43:58Z Bipolar resistive switching effect in Gd(2)O(3) films for transparent memory application Liu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih
義守大學 2011-07 Bipolar resistive switching effect in Gd2O3 films for transparent memory application Kou-Chen Liu;Wen-Hsien Tzeng;Kow-Ming Chang;Yi-Chun Chan;Chun-Chih Kuo
國立交通大學 2019-04-02T05:59:00Z Bipolar resistive switching effect in Gd2O3 films for transparent memory application Liu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih
國立臺灣科技大學 2014 Bipolar resistive switching in transparent AZO/SiOx/ITO devices Yang, P.-J.;Jou, S.;Chiu, C.-C.
國立交通大學 2014-12-08T15:29:28Z Bipolar resistive switching of chromium oxide for resistive random access memory Chen, Shih-Cheng; Chang, Ting-Chang; Chen, Shih-Yang; Chen, Chi-Wen; Chen, Shih-Ching; Sze, S. M.; Tsai, Ming-Jinn; Kao, Ming-Jer; Huang, Fon-Shan Yeh

显示项目 227376-227385 / 2346275 (共234628页)
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