國立交通大學 |
2014-12-08T15:45:06Z |
Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 angstrom
|
Wu, YH; Yang, MY; Chin, A; Chen, WJ; Kwei, CM |
國立聯合大學 |
2004 |
Electrical characteristics of high-k HfO2 gate dielectrics prepared by oxidation in HNO3 followed by rapid thermal annealing in N2
|
胡振國, C.H. Chang, L.S. Lee, M.J. Tsai and J.G. Hwu |
國立交通大學 |
2019-04-03T06:38:47Z |
Electrical characteristics of InGaZnO thin film transistor prepared by co-sputtering dual InGaZnO and ZnO targets
|
Tiwari, Nidhi; Chauhan, Ram Narayan; Liu, Po-Tsun; Shieh, Han-Ping D. |
國立中山大學 |
2006 |
Electrical Characteristics of Liquid Phase Deposited TiO2 Films on GaAs Substrate with (NH4)2Sx treatment
|
Ming-Kwei Lee; Chih-Feng Yen; Jung-Jie Huang |
國立中山大學 |
2007 |
Electrical Characteristics of Liquid-Phase-Deposited Titanium Oxide Films on (NH4)2Sx-Treated InP Substrate
|
Ming-Kwei Lee; Jung-Jie Huang; Chih-Feng Yen |
國立交通大學 |
2014-12-08T15:40:32Z |
Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric
|
Chang, KM; Yang, WC; Tsai, CP |
國立中山大學 |
2005-11 |
Electrical Characteristics of LPD TiO2 Films on GaAs Substrate with (NH4)2Sx treatment
|
Ming-Kwei Lee;Chih-Feng Yen;Jung-Jie Huang |
國立交通大學 |
2014-12-08T15:36:59Z |
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
|
Quang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin |
國立交通大學 |
2014-12-08T15:24:03Z |
Electrical Characteristics of Nanoscale Multi-Fin Field Effect Transistors with Different Fin Aspect Ratio
|
Cheng, Hui-Wen; Hwang, Chih-Hong; Li, Yiming |
國立交通大學 |
2014-12-08T15:36:18Z |
Electrical characteristics of Ni Ohmic contact on n-type GeSn
|
Li, H.; Cheng, H. H.; Lee, L. C.; Lee, C. P.; Su, L. H.; Suen, Y. W. |
國立交通大學 |
2014-12-08T15:45:55Z |
Electrical characteristics of polyoxide prepared by N-2 preannealing
|
Chang, KM; Lee, TC; Wang, JY |
國立中山大學 |
2006 |
Electrical characteristics of postmetallization-annealed MOCVD-TiO2 films on ammonium sulfide-treated GaAs
|
Ming-Kwei Lee; Chih-Feng Yen; Jung-Jie Huang; Shi-Hao Lin |
國立中山大學 |
2007 |
Electrical Characteristics of Strontium Titanate Films Prepared by Liquid Phase Deposition
|
Ming-Kwei Lee; Hung-Chang Lee; Zhen-Hui Lee |
國立交通大學 |
2014-12-08T15:04:37Z |
ELECTRICAL CHARACTERISTICS OF TEXTURED POLYSILICON OXIDE PREPARED BY A LOW-TEMPERATURE WAFER LOADING AND N-2 PREANNEALING PROCESS
|
WU, SL; LIN, TY; LEE, CL; LEI, TF |
國立交通大學 |
2014-12-08T15:12:55Z |
Electrical characteristics of the HfAlON gate dielectric with interfacial UV-ozone oxide
|
Chen, Yung-Yu; Fu, Wen-Yu; Yeh, Ching-Fa |
國立交通大學 |
2014-12-08T15:43:27Z |
Electrical characteristics of thin cerium oxide film on silicon substrate by reactive DC sputtering
|
Pan, TM; Chien, CH; Lei, TF; Chao, TS; Huang, TY |
國立交通大學 |
2014-12-08T15:36:22Z |
Electrical characteristics of thin HfO(2) gate dielectrics prepared using different pre-deposition surface treatments
|
Chen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY |
國立交通大學 |
2019-04-02T06:00:17Z |
Electrical characteristics of thin HfO2 gate dielectrics prepared using different pre-deposition surface treatments
|
Chen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY |
國立交通大學 |
2014-12-08T15:03:33Z |
ELECTRICAL CHARACTERISTICS OF THIN-FILM TRANSISTORS WITH DOUBLE-ACTIVE-LAYER STRUCTURE
|
TSAI, MJ; WANG, PW; SU, HP; CHENG, HC |
國立臺灣大學 |
2004 |
Electrical characteristics of ultra-thin gate oxides (<3 nm) prepared by direct current superimposed with alternating-current anodization
|
Chen, Zhi-Hao; Huang, Szu-Wei; Hwu, Jenn-Gwo |
國立聯合大學 |
2004 |
Electrical Characteristics of Ultra-thin Gate Oxides (<3nm) Prepared by Direct Current Superposed with Alternating-current Anodization
|
胡振國, Z.H.Chen, S.W.Huang, and J.G.Hwu |
臺大學術典藏 |
2018-09-10T04:11:33Z |
Electrical characteristics of ultrathin Pt/Y 2 O 3/Si capacitor with rapid post-metallisation annealing
|
Lay, TS;Liu, WD;Kwo, J;Hong, M;Mannaerts, JP; Lay, TS; Liu, WD; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG |
國立中山大學 |
2002 |
Electrical characteristics of ultrathin Pt/Y2O3/Si capacitor with rapid post-metallization annealing
|
T.S. Lay;W.D. Liu;J. Kwo;M. Hong;J.P. Mannaerts |
臺大學術典藏 |
2019-12-27T07:49:53Z |
Electrical characteristics of ultrathin Pt/Y2O3/Si capacitor with rapid post-metallisation annealing
|
Lay, T.S.;Liu, W.D.;Kwo, J.;Hong, M.;Mannaerts, J.P.; Lay, T.S.; Liu, W.D.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
國立交通大學 |
2014-12-08T15:04:21Z |
ELECTRICAL CHARACTERISTICS OF WO3-BASED CO2-SENSITIVE SOLID-STATE MICROSENSOR
|
CHAO, S |