| 國立交通大學 |
2014-12-08T15:17:45Z |
Growth mechanism of laser annealing of nickel-induced lateral crystallized silicon films
|
Hu, GR; Wu, YS; Chao, CW; Shih, HC |
| 臺大學術典藏 |
2018-09-10T06:33:38Z |
Growth mechanism of long and horizontally aligned carbon nanotubes by chemical vapor deposition
|
Reina, A.; Hofmann, M.; Zhu, D.; Kong, J.; Mario Hofmann |
| 淡江大學 |
2017 |
Growth Mechanism of Nano-silver Wires
|
Yi-Feng Chiang; Pai-Chung Liu; Wei-Ting Kuo; C.B. Lin |
| 國立交通大學 |
2014-12-08T15:24:27Z |
Growth Mechanism of Self-Assembled TiO2 Nanorod Arrays on Si Substrates Fabricated by Ti Anodization
|
Chang, Yung-Huang; Lin, Hsiao-Wei; Chen, Chih |
| 國立臺灣科技大學 |
2018 |
Growth mechanism of self-assembled TixWyO nanotubes fabricated by TiW alloy anodization
|
Chang Y.-H.; Chen Y.-T.; Huang C.-S.; Lu C.-L.; Lee S.-H.; Huang B.-R.; Chen C. |
| 國立交通大學 |
2019-04-02T05:59:29Z |
Growth Mechanism of Self-Assembled TixWyO Nanotubes Fabricated by TiW Alloy Anodization
|
Chang, Yung-Huang; Chen, Yuan-Tsung; Huang, Chien-Sheng; Lu, Chia-Ling; Lee, Shih-Hung; Huang, Bohr-Ran; Chen, Chih |
| 國立成功大學 |
2011-05 |
Growth mechanism of single-crystal alpha-Al(2)O(3) nanofibers fabricated by electrospinning techniques
|
Yu, Pei-Ching; Yang, Rung-Je; Tsai, Yi-Yang; Sigmund, Wolfgang; Yen, Fu-Su |
| 大葉大學 |
2017-04-24 |
Growth Mechanism of Sputter Deposited Self-assembled Alternating Layered Metal Containing Hydrogenated Amorphous Carbon Film
|
Ting, Jyh-Ming;Wu, Wan-Yu |
| 修平科技大學 |
2001 |
Growth mechanism of sputter deposited Ta and Ta-N thin films induced by an underlying titanium layer and varying nitrogen flow rates
|
G. S. Chen;S. T. Chen;S. C. Huang;H. Y. Lee |
| 南台科技大學 |
1994 |
Growth mechanism of star-shaped TiN crystals
|
鄭錫恩; Hsyi-En Cheng; Min-Hsiung Hon |
| 國立交通大學 |
2014-12-08T15:37:57Z |
Growth Mechanism of TiO(2) Nanotube Arrays in Nanopores of Anodic Aluminum Oxide on Si Substrates by Atomic Layer Deposition
|
Liu, Chien-Min; Chen, Chih; Cheng, Hsyi-En |
| 國立交通大學 |
2019-04-02T05:59:56Z |
Growth Mechanism of TiO2 Nanotube Arrays in Nanopores of Anodic Aluminum Oxide on Si Substrates by Atomic Layer Deposition
|
Liu, Chien-Min; Chen, Chih; Cheng, Hsyi-En |
| 國立臺灣師範大學 |
2014-12-02T06:41:32Z |
Growth Mechanism, Structure and IR Photoluminescence Studies of Indium Nitride Nanorods
|
Z.-H. Lan; W.-M. Wang; C.-L. Sun; S.-C. Shi; C.-W. Hsu; T.-T. Chen; K.-H. Chen; Chia-Chun Chen; Y.-F. Chen; L.-C. Chen |
| 國立臺灣大學 |
2004 |
Growth mechanism, structure and IR photoluminescence studies of indium nitride nanorods
|
Lan, Z. H.; Wang, W. M.; Sun, C. L.; Shi, S. C.; Hsu, C. W.; Chen, T. T.; Chen, K. H.; Chen, C. C.; Chen, Y. F.; Chen, L. C. |
| 國立臺灣大學 |
2004-01 |
Growth Mechanism, Structure and IR Photoluminescence Studies of Indium Nitride Nanorods
|
Lan, Z. H.; Wang, W. M.; Sun, C. L.; Shi, S. C.; Hsu, C. W.; Chen, K. H.; Chen, C. C.; Chen, L. C. |
| 臺大學術典藏 |
2019-12-27T06:48:31Z |
Growth mechanism, structure and IR photoluminescence studies of indium nitride nanorods
|
Lan, Z.H.; Wang, W.M.; Sun, C.L.; Shi, S.C.; Hsu, C.W.; Chen, T.T.; Chen, K.H.; Chen, C.C.; Chen, Y.F.; Chen, L.C.; Lan, Z.H.; YANG-FANG CHEN et al. |
| 國立中山大學 |
1984 |
Growth Mechanisms of the GaAs LPMOCVD Growth
|
C.Y. Chang;M.K. Lee;Y.K. Su;Y.C. Chou;L.P. Chen |
| 國立交通大學 |
2014-12-08T15:10:07Z |
Growth mode and novel structure of ultra-thin KCl layers on the Si(100)-2 x 1 surface
|
Tsay, S-F.; Chung, J. Y.; Hsieh, M-F.; Ferng, S-S.; Lou, C-T.; Lin, D-S. |
| 國立交通大學 |
2019-04-02T05:59:41Z |
Growth mode and novel structure of ultra-thin KCl layers on the Si(100)-2 x 1 surface
|
Tsay, S-F.; Chung, J. Y.; Hsieh, M-F.; Ferng, S-S.; Lou, C-T.; Lin, D-S. |
| 國立中山大學 |
2009 |
Growth mode and novel structure of ultra-thin KCl layers on the Si(100)-2x1 surface
|
S.F. Tsay;J.Y. Chung;M.F. Hsieh;S.S. Ferng;C.T. Lou;D.S. Lin |
| 國立中山大學 |
2005-02 |
Growth mode and surface morphology of epitaxial Pt(111) grown on Al2O3(11-20) substrates studied by scanning tunneling microscopy
|
Y.C. Liu;J.H. Lai;C.C. Kuo;J.C.A. Huang |
| 臺大學術典藏 |
1992 |
Growth Mode at the Inital Stage of InxGa1-xAs(0.28≦X≦1) on (100) GaAs by Molecular Beam Epitaxy
|
Chang, Sin-Zee; Chang, T. C.; Lee, Si-Chen; Chang, Sin-Zee; Chang, T. C.; 李嗣涔; Chang, T. C.; Lee, Si-Chen |
| 國立臺灣大學 |
1992 |
Growth Mode at the Inital Stage of InxGa1-xAs(0.28≦X≦1) on (100) GaAs by Molecular Beam Epitaxy
|
Chang, Sin-Zee; Chang, T. C.; 李嗣涔; Chang, Sin-Zee; Chang, T. C.; Lee, Si-Chen |
| 國立交通大學 |
1998-05-15 |
Growth mode in Si(100)-(2x1) epitaxy by low-temperature chemical-vapor deposition
|
Wu, PH; Lin, DS |
| 臺大學術典藏 |
2018-09-10T03:51:06Z |
Growth mode of oriented indium nitride platelets observed via lateral epitaxy
|
Y. F. Chen; T. H. Li; L. G. Hwa; YING-JAY YANG; C. S. Chang; J. S. Hwang; L. C. Chen; K. H. Chen; F. H. Yang; Y. J. Yang |
