| 國立成功大學 |
2016-08 |
INAPPROPRIATE USE OF URINARY CATHETERS AMONG HOSPITALIZED ELDERLY PATIENTS
|
Hu, F; Tsai, C.; Chen, C.; Chang, C. |
| 國立成功大學 |
2015-12 |
Inappropriate use of urinary catheters among hospitalized elderly patients: Clinician awareness is key
|
Hu, Fang-Wen; Yang, Deng-Chi; Huang, Chi-Chang; Chen, Ching-Huey; Chang, Chia-Ming |
| 國立交通大學 |
2014-12-08T15:28:12Z |
Inapproximability Results for the Weight Problems of Subgroup Permutation Codes
|
Shieh, Min-Zheng; Tsai, Shi-Chun |
| 元智大學 |
2009-10 |
InAs - Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Yasuyuki Miyamoto |
| 元智大學 |
2009-10 |
InAs - Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Yasuyuki Miyamoto |
| 元智大學 |
2009-10 |
InAs - Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Yasuyuki Miyamoto |
| 國立交通大學 |
2014-12-08T15:12:52Z |
InAs channel-based quantum well transistors for high-speed and low-voltage digital applications
|
Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi |
| 元智大學 |
2008-05 |
InAs channel-based quantum well transistors for high-speed and low-voltage digital applications
|
許恒通; Chien-I Kuo; Edward Yi Chang |
| 國立交通大學 |
2014-12-08T15:10:58Z |
InAs high electron mobility transistors with buried gate for ultralow-power-consumption low-noise amplifier application
|
Kuo, Chien-I; Hsu, Hen-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki; Tsern, Wen-Chung |
| 元智大學 |
2008-09 |
InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application
|
許恒通; Chien-I Kuo; Edward Yi Chang; Yasuyuki Miyamoto; Wen-Chung Tsern |
| 國立成功大學 |
2013-09-30 |
InAs hole inversion and bandgap interface state density of 2 x 10(11) cm(-2) eV(-1) at HfO2/InAs interfaces
|
Wang, C. H.; Wang, S. W.; Doornbos, G.; Astromskas, G.; Bhuwalka, K.; Contreras-Guerrero, R.; Edirisooriya, M.; Rojas-Ramirez, J. S.; Vellianitis, G.; Oxland, R.; Holland, M. C.; Hsieh, C. H.; Ramvall, P.; Lind, E.; Hsu, W. C.; Wernersson, L-E; Droopad, R.; Passlack, M.; Diaz, C. H. |
| 國立臺灣大學 |
2012 |
InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics
|
Lin, C.A.; Huang, M.L.; Chiu, P.-C.; Lin, H.-K.; Chyi, J.-I.; Chiang, T.H.; Lee, W.C.; Chang, Y.C.; Chang, Y.H.; Brown, G.J.; Kwo, J.; Hong, M. |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics
|
Lin, CA; Huang, ML; Chiu, P-C; Lin, H-K; Chyi, J-I; Chiang, TH; Lee, WC; Chang, YC; Chang, YH; Brown, GJ; others; MINGHWEI HONG |
| 義守大學 |
2010-09 |
InAs native oxides prepared by liquid phase oxidation method
|
Hsien-Cheng Lin;Kuan-Wei Lee;Chia-Hong Hsieh;Yu-Chun Cheng;Yeong-Her Wang |
| 國立臺灣大學 |
2001 |
InAs Quantum Dots on (001) GaAs Substrate with Two Groups of Different Sizes under Arsenic Shutter Closed Condition
|
Tang, Shiang-Feng; Lin, Shih-Yen; Lee, Si-Chen |
| 元智大學 |
2023-12-01 |
InAs Quantum Dots with Emission Wavelength of 1.38 μm Grown by Molecular Beam Epitaxy on GaAs Substrates
|
Pin-Chih Liu; Kai-Yang Hsu; Bhavya Kondapavuluri; Jhih-Han Lin; Hou-Yi Chen; Balaji G; Wei-Sheng Liu; Jen-Inn Chyi |
| 元智大學 |
2008-05 |
InAs Quantum Well Transistors for High-Speed Low Power Applications
|
許恒通; Edward Yi Chang; Chien-I Kuo |
| 元智大學 |
2008-05 |
InAs Quantum Well Transistors for High-Speed Low Power Applications
|
許恒通; Edward Yi Chang; Chien-I Kuo |
| 國立交通大學 |
2014-12-08T15:29:52Z |
InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
|
Chang, Edward-Yi; Kuo, Chien-I; Hsu, Heng-Tung; Chiang, Che-Yang; Miyamoto, Yasuyuki |
| 元智大學 |
2013-03 |
InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
|
E. Y. Chang; C. I. Kuo; Heng-Tung Hsu; Che-Yang Chiang; Y. Miyamoto |
| 國立交通大學 |
2014-12-08T15:36:33Z |
InAs-based heterostructure field-effect transistor using AlAs0.16Sb0.84 double barriers
|
Lin, Yue-Min; Lin, Kun-Ping; Lee, Ting-Chi; Li, Meng-Ying; Lee, Chien-Ping |
| 國立交通大學 |
2019-04-02T06:00:08Z |
InAs-based heterostructure field-effect transistor using AlAs0.16Sb0.84 double barriers
|
Lin, Yue-Min; Lin, Kun-Ping; Lee, Ting-Chi; Li, Meng-Ying; Lee, Chien-Ping |
| 元智大學 |
2009-04 |
InAs-Channel HEMTs for Ultra-Low-Power LNA Applications
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Yasuyuki Miyamoto |
| 元智大學 |
2008-09 |
InAs-Channel HEMTs for Ultra-Low-Power LNA Applications
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Chien-I Kuo; Yasuyuki Miyamoto |
| 元智大學 |
2008-09 |
InAs-Channel HEMTs for Ultra-Low-Power LNA Applications
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Chien-I Kuo; Yasuyuki Miyamoto |
