| 國立交通大學 |
2014-12-08T15:48:43Z |
InGaAs/GaAs quantum dots on (111)B GaAs substrates
|
Tsai, FY; Lee, CP |
| 國立交通大學 |
2014-12-08T15:44:24Z |
InGaAs/GaAs quantum wells and quantum dots on (111)B orientation
|
Tyan, SL; Lin, YG; Tsai, FY; Lee, CP; Shields, PA; Nicholas, RJ |
| 國立成功大學 |
2001 |
InGaAs/GaAs quantum wells and quantum dots on (111)B orientation
|
Tyan, Shing-Long; Lin, Yun-Ging; Tsai, Fu-Yi; Lee, Chien-Ping; Shields, Philip A.; Nicholas, Robin J. |
| 南台科技大學 |
1995 |
InGaAs/GaAs Quantum Wells Grown by Metal Organic Chemical Vapor Deposition Using Tertiarybutylarsine Sources
|
鄒文正; Yan-Kuin Su; Hrong kuan; Wen-Cheng Tzou |
| 國立交通大學 |
2014-12-12T02:20:52Z |
InGaAs/GaAs 量子井結構中晶格應變造成之缺陷能階電性分析
|
蔡秋韻; Chiu-Yun Tsai; 陳振芳; Jenn-Fang Chen |
| 國立成功大學 |
2005-07-11 |
InGaAs/GaAs(111) 與 InAs/GaAs(100) 量子點之螢光光譜分析
|
林昀靚; Lin, Yun-Ging |
| 國立交通大學 |
2014-12-12T02:35:01Z |
InGaAs/GaAs自組式垂直耦合雙量子點之穿隧效應與光學異向性
|
李柏元; Li, Po-Yuan; 鄭舜仁; Cheng, Shun-Jen |
| 國立交通大學 |
2014-12-12T02:23:25Z |
InGaAs/GaAs量子點與GaAsN/GaAs量子井的電性與光性研究
|
王錦雄; Jiin-Shung Wang; 陳振芳; Jenn-Fang Chen |
| 國立中山大學 |
1994 |
InGaAs/InGaAlAs、InGaAs/InP、與GaAs/InGaP 等異質結構的能帶排列
|
黃金花 |
| 大葉大學 |
2002 |
InGaAs/InP heterojunction band-offset measurement by electrochemical capacitance-voltage technique
|
黃俊達 |
| 國立成功大學 |
2006-01 |
InGaAsN metal-semiconductor-metal photodetectors with modulation-doped heterostructures
|
Hsu, S. H.; Su, Yan-Kuin; Chang, Shoou-Jinn; Chen, W. C.; Tsai, H. L. |
| 國立成功大學 |
2007-04 |
InGaAsN metal-semiconductor-metal photodetectors with transparent indium tin oxide Schottky contacts
|
Su, Yan-Kuin; Chen, Wei-Cheng; Chuang, Ricky Wenkuei; Hsu, Shuo-Hsien; Chen, Bing-Yang |
| 國立交通大學 |
2014-12-12T02:56:08Z |
InGaAsN/GaAs量子井之成份波動效應
|
謝佩珍; Pei-Chen Hsieh; 陳振芳; Jenn-Fang Chen |
| 國立彰化師範大學 |
2004 |
InGaAsN量子井雷射之模擬與分析
|
陳秀芬; 傅少甫; 郭艷光 |
| 國立交通大學 |
2014-12-08T15:15:49Z |
InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-mu m lasers
|
Li, A.; Liu, S. C.; Su, K. W.; Liao, Y. L.; Huang, S. C.; Chen, Y. F.; Huang, K. F. |
| 國立成功大學 |
2000-11 |
InGaAsP Thin film microdisk Resonators Fabricated by Polymer Wafer Bonding for Wavelength Add-Drop Filters
|
Ma, Yong; Chang, Shih-Hui; Seoijin Park; Wang, Liwei; �Ho,� Seong-�Tiong |
| 國立中山大學 |
2006-07-12 |
InGaAsP/InGaAlAs非對稱針狀多重量子井應用於整合電致吸收調變器與光放大器之研製
|
李定國 |
| 臺大學術典藏 |
Dec-00 |
InGaAsP/InP laser diodes/superluminescent diodes with nonidentical quantum wells
|
Lin, Ching-Fuh;Wu, Bing-Ruey;Laih, Lih-Wen;Shih, Tien-Tsorng; Lin, Ching-Fuh; Wu, Bing-Ruey; Laih, Lih-Wen; Shih, Tien-Tsorng; Lin, Ching-Fuh; Wu, Bing-Ruey; Laih, Lih-Wen; Shih, Tien-Tsorng |
| 國立臺灣大學 |
2000-12 |
InGaAsP/InP laser diodes/superluminescent diodes with nonidentical quantum wells
|
Lin, Ching-Fuh; Wu, Bing-Ruey; Laih, Lih-Wen; Shih, Tien-Tsorng |
| 國立臺灣科技大學 |
1989 |
InGaAs單量子井調制光學特性研究
|
林得裕 |
| 國立中山大學 |
2008-06-30 |
InGaAs的電調制反射光譜
|
許智誠 |
| 國立中山大學 |
2011-07-15 |
InGaAs耦合量子點太陽電池研究
|
曾凱迪 |
| 國立臺灣大學 |
1996 |
InGaAs量子點及紅外線光電元件
|
李嗣涔 |
| 國立成功大學 |
2007-06-16 |
InGaAs量子點與量子井變功率螢光光譜研究
|
蔡忠剛; Tsai, Chung-Kang |
| 國立臺灣科技大學 |
2007 |
InGaN blue light-emitting diodes with ZnO nucleation layers prepared by the sol-gel method
|
Chen, L.-C.;Huang, J.-B.;Cheng, P.-J.;Hong, L.-S. |
| 國立成功大學 |
2013-12 |
InGaN Flip-Chip Light-Emitting Diodes With Embedded Air Voids as Light-Scattering Layer
|
Yeh, Yu-Hsiang; Sheu, Jinn-Kong; Lee, Ming-Lun; Chen, Po-Cheng; Yang, Yu-Chen; Yen, Cheng-Hsiung; Lai, Wei-Chih |
| 國立成功大學 |
2015-08 |
InGaN LED fabricated on Eco-GaN template with a Ga2O3 sacrificial layer for chemical lift-off application
|
Hsueh, Hsu-Hung; Ou, Sin-Liang; Wuu, Dong-Sing; Horng, Ray-Hua |
| 南台科技大學 |
2006 |
InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface
|
李明倫; J. K. Sheu; C. M. Tsai; M. L. Lee; S. C .Shei; W. C. Lai |
| 國立成功大學 |
2006-03-13 |
InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface
|
Sheu, Jinn-Kong; Tsai, C. M.; Lee, M. L.; Shei, Shih-Chang; Lai, W. C. |
| 國立成功大學 |
2011-08 |
InGaN Metal-Semiconductor-Metal Photodetectors With Aluminum Nitride Cap Layers
|
Lee, Kai-Hsuan; Chang, Ping-Chuan; Chang, Shoou-Jinn; Wu, San-Lein |
| 國立成功大學 |
2011 |
InGaN metal-semiconductor-metal photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers
|
Lee, K.-H.;Chang, P.-C.;Chang, S.-J.;Wu, S.-L. |
| 國立成功大學 |
2004-02 |
InGaN metal-semiconductor-metal photodiodes with nanostructures
|
Ji, Liang-Wen; Su, Yan-Kuin; Chang, Shoou-Jinn; Hung, Shang-Chao; Wang, Chun-Kai; Fang, Te-Hua; Tsai, Tzong-Yow; Chuang, Ricky; Su, Wei; Zhong, Jing-Chang |
| 國立彰化師範大學 |
2011 |
InGaN Multiple-quantum Well Light-emitting Diodes with Thin Last Barrier and P-doped Last Barrier
|
Wang, Tsun-Hsin; Chang, Jih-Yuan; Tsai, Miao-Chan; Yen, Sheng-Horng; Kuo, Yen-Kuang |
| 南台科技大學 |
2006-08 |
InGaN p-i-n ultraviolet - A band-pass photodetectors
|
T. K. Ko; S. C. Shei; S. J. Chang; Y. Z. Chiou; R. W. Lin; W. S. Chen; C. F. Shen; C. S. Chang; K. W. Lin |
| 國立成功大學 |
2006-08 |
InGaN p-i-n ultraviolet - A band-pass photodetectors
|
Ko, T. K.; Shei, Shih-Chang; Chang, Shoou-Jinn; Chiou, Yu-Zung; Lin, R. M.; Chen, W. S.; Shen, C. F.; Chang, C. S.; Lin, K. W. |
| 國立成功大學 |
2003-10 |
InGaN quantum dot photodetectors
|
Ji, L. W.; Su, Yan-Kuin; Chang, Shoou-Jinn; Liu, S. H.; Wang, C. K.; Tsai, S. T.; Fang, T. H.; Wu, Long; Xue, Qi-Kun |
| 國立交通大學 |
2014-12-08T15:17:03Z |
InGaN self-assembled quantum dots grown by metal-organic chemical vapour deposition with growth interruption
|
Yao, HH; Lu, TC; Huang, GS; Chen, CY; Liang, WD; Kuo, HC; Wang, SC |
| 國立成功大學 |
2002-06 |
InGaN-AlInGaN multiquantum-well LEDs
|
Lai, Wei-Chih; Chang, Shoou-Jinn; Yokoyam, Meiso; Sheu, Jinn-Kong; Chen, Jone-Fang |
| 國立成功大學 |
2017-07 |
InGaN-based epitaxial films as photoelectrodes for hydrogen generation through water photoelectrolysis and CO2 reduction to formic acid
|
Sheu;J, K.;Liao;P, H.;Huang;T, C.;Chiang;K, J.;Lai;W, C.;Lee;M, L. |
| 國立交通大學 |
2014-12-08T15:25:47Z |
InGaN-based light-emitting diode with undercut side wall
|
Kao, CC; Chu, JT; Huang, HW; Peng, YC; Yu, CC; Hseih, YL; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:06:54Z |
InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates
|
Deng, Dongmei; Yu, Naisen; Wang, Yong; Zou, Xinbo; Kuo, Hao-Chung; Chen, Peng; Lau, Kei May |
| 國立臺灣科技大學 |
2016 |
InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate
|
Ke, W.-C;Lee, F.-W;Chiang, Chiang C.-Y;Liang, Z.-Y;Chen, W.-K;Seong, T.-Y. |
| 國立交通大學 |
2017-04-21T06:55:28Z |
InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate
|
Ke, Wen-Cheng; Lee, Fang-Wei; Chiang, Chih-Yung; Liang, Zhong-Yi; Chen, Wei-Kuo; Seong, Tae-Yeon |
| 國立臺灣科技大學 |
2018 |
InGaN-based light-emitting diodes grown on various aspect ratios of concave nanopattern sapphire substrate
|
Ke W.-C.; Chiang C.-Y.; Son W.; Lee F.-W. |
| 國立交通大學 |
2019-04-02T05:58:50Z |
InGaN-based light-emitting diodes grown on various aspect ratios of concave nanopattern sapphire substrate
|
Ke, Wen-Cheng; Chiang, Chih-Yung; Son, Widi; Lee, Fang-Wei |
| 南台科技大學 |
2022-06 |
InGaN-based light-emitting diodes with Al content graded p-AlxGa1-xN top contact layer
|
Lee, Ming- Lun; Tu, Shang-Ju; Sheu, Jinn-Kong |
| 國立成功大學 |
2022-09 |
InGaN-based light-emitting diodes with Al content graded p-AlxGa1-xN top contact layer
|
Lee;Ming-Lun;Tu;Shang-Ju;Sheu;Jinn-Kong |
| 國立成功大學 |
2012-10-01 |
InGaN-Based Light-Emitting Diodes With an AlGaN Staircase Electron Blocking Layer
|
Chang, Shoou-Jinn; Yu, Sheng-Fu; Lin, Ray-Ming; Li, Shuguang; Chiang, Tsung-Hsun; Chang, Sheng-Po; Chen, Chang-Ho |
| 國立交通大學 |
2014-12-08T15:08:02Z |
InGaN-GaN Light Emitting Diode Performance Improved by Roughening Indium Tin Oxide Window Layer via Natural Lithography
|
Liao, Cheng; Wu, YewChung Sermon |
| 國立臺灣大學 |
2000 |
InGaN-GaN Light Emitting Diodes Grown by Molecular Beam Epitaxy
|
Chang, Chin-An; Wu, E-Tsou; Lai, Fung-Jei; Tsai, Chia-Ming; Hong, Ming-Cheng; Wu, Cheng-Ru; Ho, Ching-Kuo; Liu, Huei-Fen; Feng, Shih-Wei; Liao, Chih-Chih; Yang, C. C. |
