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显示项目 514431-514440 / 2348973 (共234898页) << < 51439 51440 51441 51442 51443 51444 51445 51446 51447 51448 > >> 每页显示[10|25|50]项目
| 臺大學術典藏 |
2021-01-27T07:49:50Z |
Inserting Co and P into MoS2photocathodes: enhancing hydrogen evolution reaction catalytic performance by activating edges and basal planes with sulfur vacancies
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Pichaimuthu, K.;Jena, A.;Chang, H.;Su, C.;Liu, R.-S.; Pichaimuthu, K.; Jena, A.; Chang, H.; Su, C.; Liu, R.-S.; RU-SHI LIU |
| 臺大學術典藏 |
2018-09-10T08:33:15Z |
Inserting the tunneller during an outside-in transobturator tape procedure by syringe-needle guidance
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Hsiao, S.M. and Chang, T.C. and Wu, W.Y. and Chen, C.H. and Lin, H.H.; HO-HSIUNG LIN; CHI-HAU CHEN |
| 臺大學術典藏 |
2011 |
Inserting the tunneller during an outside-in transobturator tape procedure by syringe-needle guidance
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Hsiao S.M.;Chang T.C.;Wu W.Y.;Chi-Hau Chen;Lin H.H.; Hsiao S.M.; Chang T.C.; Wu W.Y.; CHI-HAU CHEN; Lin H.H. |
| 臺大學術典藏 |
2020-02-17T05:28:12Z |
Inserting the tunneller during an outside-in transobturator tape procedure by syringe-needle guidance
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Lin H.H.; Chen C.H; TING-CHEN CHANG; Wu W.Y; Hsiao S.M; Hsiao S.M;Ting-Chen Chang;Wu W.Y;Chen C.H;Lin H.H. |
| 臺大學術典藏 |
2020-02-17T08:50:59Z |
Inserting the tunneller during an outside-in transobturator tape procedure by syringe-needle guidance
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HO-HSIUNG LIN; Chen C.H; Wu W.Y; Hsiao S.M; Chang T.C |
| 臺大學術典藏 |
2021-03-03T03:01:08Z |
Inserting the tunneller during an outside-in transobturator tape procedure by syringe-needle guidance
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Hsiao S.M.;Chang T.C.;Wu W.Y.;Chen C.H.;Ho-Hsiung Lin; Hsiao S.M.; Chang T.C.; Wu W.Y.; Chen C.H.; HO-HSIUNG LIN |
| 國立交通大學 |
2014-12-08T15:18:14Z |
Insertion loss function synthesis of maximally flat parallel-coupled line bandpass filters
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Chin, KS; Kuo, JT |
| 元智大學 |
2018-12-06 |
Insertion of 1,3-bis[2-(2,2’-bipyridine-6-yl)-1,3,4-oxadiazo-5-yl]benzene (Bpy-OXD) in exciplex sensitized triplet-triplet annihilation organic light-emitting diode
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Bo-An Fan; Chi-Feng Lin; Tien-Lung Chiu; Jiun-Haw Lee |
| 國立交通大學 |
2014-12-08T15:31:21Z |
Insertion of a Si layer to reduce operation current for resistive random access memory applications
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Chen, Yu-Ting; Chang, Ting-Chang; Peng, Han-Kuang; Tseng, Hsueh-Chih; Huang, Jheng-Jie; Yang, Jyun-Bao; Chu, Ann-Kuo; Young, Tai-Fa; Sze, Simon M. |
| 國立成功大學 |
2013-06-24 |
Insertion of a Si layer to reduce operation current for resistive random access memory applications
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Chen, Yu-Ting; Chang, Ting-Chang; Peng, Han-Kuang; Tseng, Hsueh-Chih; Huang, Jheng-Jie; Yang, Jyun-Bao; Chu, Ann-Kuo; Young, Tai-Fa; Sze, Simon M. |
显示项目 514431-514440 / 2348973 (共234898页) << < 51439 51440 51441 51442 51443 51444 51445 51446 51447 51448 > >> 每页显示[10|25|50]项目
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