English  |  正體中文  |  简体中文  |  总笔数 :2854037  
造访人次 :  45311756    在线人数 :  1682
教育部委托研究计画      计画执行:国立台湾大学图书馆
 
臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
关于TAIR

浏览

消息

著作权

相关连结

跳至: [ 中文 ] [ 数字0-9 ] [ A B C D E F G H I J K L M N O P Q R S T U V W X Y Z ]
请输入前几个字:   

显示项目 641326-641335 / 2346788 (共234679页)
<< < 64128 64129 64130 64131 64132 64133 64134 64135 64136 64137 > >>
每页显示[10|25|50]项目

机构 日期 题名 作者
國立臺灣大學 2004 Optoacoustic imaging with synthetic aperture focusing and coherence weighting Liao, C -K; Li, M -L; Li, P -C
臺大學術典藏 2018-09-10T04:59:58Z Optoacoustic imaging with synthetic aperture focusing and coherence weighting C.-K. Liao; M.-L. Li; P.-C. Li; PAI-CHI LI
臺大學術典藏 2018-09-10T06:30:18Z Optode design on flexible print circuit board for a portable diffuse optical tomography system Wu, C.-M.; Yu, Z.-H.; Sun, C.-W.; Jiang, C.-P.; Ma, K.-T.; Tsai, J.-C.; JUI-CHE TSAI
國立成功大學 2013-04-22 Optoelectrical and low-frequency noise characteristics of flexible ZnO-SiO2 photodetectors with organosilicon buffer layer Lai, Wei-Chih; Chen, Jiun-Ting; Yang, Ya-Yu
國立成功大學 2012 Optoelectrically Enabled Multi-scale Manipulation Chuang, Han-Sheng; Kumar, Aloke; Williams, Stuart; Wereley, Steven T.
南台科技大學 2023-02 Optoelectronic and structural properties of ITO/Ag/ITO transparent electrodes using ultraviolet laser annealing Rajendran, Manikandan; Lin, Keh-Moh; Hsiao, Wen-Tse
國立彰化師範大學 2009-04 Optoelectronic and structural properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering Yen, W. T. ; Chen, Yung-Lin; Lin, Yi- Cheng
國立交通大學 2014-12-08T15:48:53Z Optoelectronic characteristics of a-SiC : H-based pin thin film LEDs having a thin Mo buffer layer in contact with p-type a-Si : H Chen, YA; Wu, YH; Tsay, WC; Laih, LH; Hong, JW; Chang, CY
國立交通大學 2014-12-08T15:01:29Z Optoelectronic characteristics of alpha-SiC:H-based P-I-N thin-film light-emitting diodes with low-resistance and high-reflectance N+-alpha-SiCGe:H layer Chen, YA; Chiou, CF; Tsay, WC; Laih, LH; Hong, JW; Chang, CY
國立交通大學 2019-04-02T05:59:48Z Optoelectronic characteristics of alpha-SiC:H-based P-I-N thin-film light-emitting diodes with low-resistance and high-reflectance N+-alpha-SiCGe:H layer Chen, YA; Chiou, CF; Tsay, WC; Laih, LH; Hong, JW; Chang, CY

显示项目 641326-641335 / 2346788 (共234679页)
<< < 64128 64129 64130 64131 64132 64133 64134 64135 64136 64137 > >>
每页显示[10|25|50]项目