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機構 日期 題名 作者
國立成功大學 2017 High responsivity in GaN ultraviolet photodetector grown on a periodic trapezoid-column patterned sapphire substrate Liu, K.-T.;Chang, S.-J.;Wu, S.
國立成功大學 2017-07 High Responsivity Indium-Zinc-Oxide Ultraviolet Thin-Film Phototransistor Chang;Sheng-Po;Hua;Wen-Chen;Li;Jun-Yi
東方設計學院 2008-11-20 High Responsivity Metal-Semiconductor-Metal Photodetector based on N-polarity GaN Film Liu, K.T; Hsu, C.K.; Chang, S.J.; Wu, S.; Hu, S. Y.; 胡勝耀; (東方技術學院電機工程系)
國立成功大學 2015-05-01 High Responsivity MgxZn1-xO Film UV Photodetector Grown by RF Sputtering Li, Jyun-Yi; Chang, Sheng-Po; Lin, Hung-Hsu; Chang, Shoou-Jinn
國立成功大學 2017-02 High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering Li;Jyun-Yi;Chang;Sheng-Po;Hsu;Ming-Hung;Chang;Shoou-Jinn
國立成功大學 2012-12-24 High responsivity of amorphous indium gallium zinc oxide phototransistor with Ta2O5 gate dielectric Chang, TH; Chiu, CJ; Weng, WY; Chang, SJ; Tsai, TY; Huang, ZD
國立交通大學 2014-12-08T15:13:14Z High responsivity of GaN p-i-n photodiode by using low-temperature interlayer Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Chen, W. R.; Huang, C. Y.; Lai, W. C.; Lin, W. J.; Cheng, Y. C.
國立成功大學 2007-10-22 High responsivity of GaN p-i-n photodiode by using low-temperature interlayer Lin, J. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Lan, W. H.; Huang, K. C.; Chen, Wen-Ray; Huang, C. Y.; Lai, W. C.; Lin, W. J.; Cheng, Y. C.
國立虎尾科技大學 2007 High responsivity of GaN p-i-n photodiode by using low-temperature interlayer Lin, J. C.;Su, Yaochi;Chang, Shoou-Jinn;Cheng, Y.C;Huang, K. C.;Chen, Wen-Ray;Huang, C. Y.;Lai, Wei-Chi;Lin, W. J.;Cheng, Y.C
臺大學術典藏 2020-06-11T06:22:48Z High responsivity quantum-dot infrared photodetector with Al 0.1 Ga 0.9 As blocking layers at both sides of the structure Lin, S.-Y.;Chi, J.-Y.;Lee, S.-C.; Lin, S.-Y.; Chi, J.-Y.; Lee, S.-C.; SI-CHEN LEE

顯示項目 469576-469585 / 2349129 (共234913頁)
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