|
顯示項目 487666-487675 / 2349007 (共234901頁)
<< < 48762 48763 48764 48765 48766 48767 48768 48769 48770 48771 > >>
每頁顯示[10|25|50]項目
| 臺大學術典藏 |
2018-09-10T05:56:10Z |
III-V Compound Semiconductor MOSFET
|
Hong, Minghwei; Kwo, J Raynien; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:19Z |
III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric
|
Ren, F; Hong, M; Kuo, JM; Hobson, WS; Lothian, JR; Tsai, HS; Lin, J; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:20Z |
III-V compound semiconductor transistors - From planar to nanowire structures
|
Riel, H.;Wernersson, L.-E.;Hong, M.;Del Alamo, J.A.; Riel, H.; Wernersson, L.-E.; Hong, M.; Del Alamo, J.A.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
III-V compound semiconductor transistors—from planar to nanowire structures
|
Riel, Heike;Wernersson, Lars-Erik;Hong, Minghwei;del Alamo, Jes{\\'u; Riel, Heike; Wernersson, Lars-Erik; Hong, Minghwei; del Alamo, Jes{\\'u; MINGHWEI HONG |
| 國立彰化師範大學 |
2001 |
III-V InGaN and AlGaN Bandgap Bowing and Optical Properties Derived from Theoretical Simulation
|
Lin, Wen-Wei; Kuo, Yen-Kuang; Lin, Jiann |
| 國立交通大學 |
2014-12-16T06:13:59Z |
III-V metal-oxide-semiconductor device
|
Chang Edward Yi; Lin Yueh-Chin |
| 國立交通大學 |
2014-12-16T06:14:59Z |
III-V METAL-OXIDE-SEMICONDUCTOR DEVICE
|
CHANG Edward Yi; LIN Yueh-Chin |
| 國立交通大學 |
2014-12-16T06:15:17Z |
III-V METAL-OXIDE-SEMICONDUCTOR DEVICE
|
CHANG Edward Yi; LIN Yueh-Chin |
| 臺大學術典藏 |
2019-12-27T07:49:44Z |
III-V metal-oxide-semiconductor field-effect transistors with high 庥 dielectrics
|
Hong, M.; Kwo, J.R.; Tsai, P.-C.; Chang, Y.; Huang, M.-L.; Chen, C.-P.; Lin, T.-D.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:10Z |
III-V MOSFET's with Advanced High k Dielectrics
|
Hong, Minghwei; Kwo, J Raynien; Chen, CP; Chang, YC; Huang, ML; Lin, CF; MINGHWEI HONG |
顯示項目 487666-487675 / 2349007 (共234901頁)
<< < 48762 48763 48764 48765 48766 48767 48768 48769 48770 48771 > >>
每頁顯示[10|25|50]項目
|
