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顯示項目 511566-511615 / 2348973 (共46980頁)
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| 國立彰化師範大學 |
2008 |
Infusing Inquiry Teaching into Classroom Practice: A Junior High School Science Teacher’s Professional Development Experience
|
Chen, J. Y. ; Chang, Huey-Por; Guo, C. J. ; Chang, W. Y. |
| 大葉大學 |
2001-06 |
Infusing technology into education: current Perspectives in Distance Education.
|
Chao, W. Y. |
| 臺大學術典藏 |
2021-04-29T07:30:24Z |
Infusion of Human Mesenchymal Stem Cells Improves Regenerative Niche in Thioacetamide-Injured Mouse Liver
|
Kao Y.-H.;Lin Y.-C.;Po-Huang Lee;Lin C.-W.;Chen P.-H.;Tai T.-S.;Chang Y.-C.;Chou M.-H.;Chang C.-Y.;Sun C.-K.; Kao Y.-H.; Lin Y.-C.; PO-HUANG LEE; Lin C.-W.; Chen P.-H.; Tai T.-S.; Chang Y.-C.; Chou M.-H.; Chang C.-Y.; Sun C.-K. |
| 國立成功大學 |
2006-05 |
Infusion of human umbilical cord blood cells protect against cerebral ischemia and damage during heatstroke in the rat
|
Chen, Sheng-Hsien; Chang, Fong-Ming; Tsai, Y. C.; Huang, K. F.; Lin, C. L.; Lin, M. T. |
| 國立臺灣大學 |
2008 |
Infusion of lidocaine into the dorsal hippocampus before or after the shock training phase impaired conditioned freezing in a two-phase training task of contextual fear conditioning
|
Chang, Shih-Dar; Chen, Der-Yow; Liang, K.C. |
| 國立交通大學 |
2014-12-12T02:17:39Z |
InGaAlAs/AlGaAs飽和布拉格反射鏡產生之非線性飽和吸收與反射率之研究
|
李宏偉; Lee, Hong-wei; 黃凱風; Huang Kai-Feng |
| 國立中山大學 |
2008-05 |
InGaAlAs/InGaAs strain-balanced multi-quantum-well laser/SOAs operating at excited transitions
|
David J.Y. Feng;C.L. Chiu;S.H. Lin;T.S. Lay;T.Y. Chang |
| 臺大學術典藏 |
2018-09-10T08:12:49Z |
InGaAs and Ge MOSFETs with a common high $κ$ gate dielectric
|
Lee, WC;Lin, TD;Chu, LK;Chang, P;Chang, YC;Chu, RL;Chiu, HC;Lin, CA;Chang, WH;Chiang, TH;others; Lee, WC; Lin, TD; Chu, LK; Chang, P; Chang, YC; Chu, RL; Chiu, HC; Lin, CA; Chang, WH; Chiang, TH; others; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:31Z |
InGaAs and Ge MOSFETs with a common high 庥 gate dielectric
|
Lee, W.C.;Lin, T.D.;Chu, L.K.;Chang, P.;Chang, Y.C.;Chu, R.L.;Chiu, H.C.;Lin, C.A.;Chang, W.H.;Chiang, T.H.;Lee, Y.J.;Hong, M.;Kwo, J.; Lee, W.C.; Lin, T.D.; Chu, L.K.; Chang, P.; Chang, Y.C.; Chu, R.L.; Chiu, H.C.; Lin, C.A.; Chang, W.H.; Chiang, T.H.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
InGaAs and Ge MOSFETs with high $κ$ dielectrics
|
Lee, WC;Chang, P;Lin, TD;Chu, LK;Chiu, HC;Kwo, J;Hong, M; Lee, WC; Chang, P; Lin, TD; Chu, LK; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:29Z |
InGaAs and Ge MOSFETs with high 庥 dielectrics
|
Lee, W.C.;Chang, P.;Lin, T.D.;Chu, L.K.;Chiu, H.C.;Kwo, J.;Hong, M.; Lee, W.C.; Chang, P.; Lin, T.D.; Chu, L.K.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 國立交通大學 |
2019-04-02T05:58:40Z |
InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D
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Chang, Po-Chun; Hsiao, Chih-Jen; Lumbantoruan, Franky Juanda; Wu, Chia-Hsun; Lin, Yen-Ku; Lin, Yueh-Chin; Sze, Simon M.; Chang, Edward Yi |
| 國立臺灣科技大學 |
2009-11-02 |
InGaAs LDMOS Power Semiconductor Device Performances
|
Yidong Liu;Jiann-Shiun Yuan;Jason Steighner |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
InGaAs Metal Oxide Semiconductor Devices with Ga 2 O 3 (Gd 2 O 3) High-$κ$ Dielectrics for Science and Technology beyond Si CMOS
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Hong, M;Kwo, J;Lin, TD;Huang, ML; Hong, M; Kwo, J; Lin, TD; Huang, ML; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:38Z |
InGaAs metal oxide semiconductor devices with Ga2O 3(Gd2O3) High-庥 dielectrics for science and technology beyond Si CMOS
|
Hong, M.;Kwo, J.;Lin, T.D.;Huang, M.L.; Hong, M.; Kwo, J.; Lin, T.D.; Huang, M.L.; MINGHWEI HONG |
| 國立交通大學 |
2017-04-21T06:49:47Z |
InGaAs Metal-Oxide-Semiconductor FETs with Self-Aligned Ni-Alloy Source/Drain
|
Wang, Shin-Yuan; Chien, Chao-Hsin; Lin, Jin-Ju; Chang, Chun-Yen |
| 臺大學術典藏 |
2019-12-27T07:49:35Z |
InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al 2O3/Ga2O3(Gd2O 3) as a gate dielectric
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Lin, T.D.;Chiu, H.C.;Chang, P.;Lee, W.C.;Chinag, T.H.;Kwo, J.;Tsai, W.;Hong, M.; Lin, T.D.; Chiu, H.C.; Chang, P.; Lee, W.C.; Chinag, T.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:13Z |
InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3 (Gd2O3) as a gate dielectric
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Lin, TD;Chiu, HC;Chang, P;Lee, WC;Chiang, TH;Kwo, JR;Tsai, W;Hong, M; Lin, TD; Chiu, HC; Chang, P; Lee, WC; Chiang, TH; Kwo, JR; Tsai, W; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:11Z |
InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation
|
Chang, YC; Huang, ML; Lee, YJ; Lee, KY; Lin, TD; Hong, M; Kwo, J; Liao, CC; Cheng, KY; Lay, TS; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:43Z |
InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation
|
MINGHWEI HONG;Lay, T.S.;Cheng, K.Y.;Liao, C.C.;Kwo, J.;Hong, M.;Lin, T.D.;Lee, K.Y.;Lee, Y.J.;Huang, M.L.;Chang, Y.C.; Chang, Y.C.; Huang, M.L.; Lee, Y.J.; Lee, K.Y.; Lin, T.D.; Hong, M.; Kwo, J.; Liao, C.C.; Cheng, K.Y.; Lay, T.S.; MINGHWEI HONG |
| 國立臺灣海洋大學 |
2007-01 |
InGaAs quantum well saturable absorbers for diode-pumped passively Q-switched Nd YAG laser at 1123 nm
|
K. F. Huang; J. Y. Huang; H. C. Liang; K. W. Su; H. C. Lai; Y. F. Chen |
| 國立交通大學 |
2014-12-08T15:14:56Z |
InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd : YAG laser at 1123 nm
|
Huang, J. Y.; Liang, H. C.; Su, K. W.; Lai, H. C.; Chen, Y. -F.; Huang, K. F. |
| 國立交通大學 |
2018-08-21T05:53:11Z |
InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment
|
Chang, Po-Chun; Luc, Quang-Ho; Lin, Yueh-Chin; Lin, Yen-Ku; Wu, Chia-Hsun; Sze, Simon M.; Chang, Edward Yi |
| 元智大學 |
2007-06 |
InGaAs Sub-monolayer Quantum Dots VCSEL with Extremely Temperature Insensitivity for 2.125 Gb/s Application
|
賴芳儀; H. C. Kuo; H. W. Huang; S. C. Wang; G. R. Lin; J. Chi; N. A. Maleev; S. A. Blokhin |
| 臺大學術典藏 |
2007 |
InGaAs sub-monolayer quantum dots VCSEL with extremely temperature insensitivity for 2.125 Gb/s application
|
GONG-RU LIN; Blokhin, S.A.; Maleev, N.A.; Chi, J.; Lin, G.R.; Wang, S.C.; Huang, H.W.; Kuo, H.C.; Lai, F.-I. |
| 國立交通大學 |
2014-12-08T15:14:01Z |
InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications
|
Yang, Hung-Pin D.; Yeh, Zao-En; Lin, Gray; Kuo, Hao-Chung; Chi, Jim Y. |
| 國立交通大學 |
2014-12-12T02:15:27Z |
InGaAs 應變量子阱之光調制光譜研究
|
廖建智; Liaw, Chen-Chy; 楊賜麟 |
| 國立成功大學 |
2003 |
InGaAs 量子點其光電特性之研究
|
田興龍 |
| 國立交通大學 |
2014-12-12T01:40:19Z |
InGaAs(N)/GaAs多層量子井的電光性研究
|
曾淳俊; Tseng, Chun-Chun; 陳振芳 |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOS
|
Hong, M;Kwo, J;Lin, TD;Huang, ML;Lee, WC;Chang, P; Hong, M; Kwo, J; Lin, TD; Huang, ML; Lee, WC; Chang, P; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:31Z |
InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOS
|
Hong, M.;Kwo, J.;Lin, T.D.;Huang, M.L.;Lee, W.C.;Chang, P.; Hong, M.; Kwo, J.; Lin, T.D.; Huang, M.L.; Lee, W.C.; Chang, P.; MINGHWEI HONG |
| 國立交通大學 |
2014-12-08T15:08:44Z |
InGaAs-Capped InAs-GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range
|
Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Mai, Shu-Cheng; Lin, Shih-Yen; Wu, Meng-Chyi |
| 國立高雄師範大學 |
1997 |
InGaAs-GaAs pseudomorphic heterostructure Transistor Prepared by MOVPE
|
Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Kun-Wei Lin,;Chin-Chuan Cheng; 蔡榮輝 |
| 國立高雄師範大學 |
1996 |
InGaAs-GaAs Pseudomorphic Heterostructure Transistor Prepared by MOVPE
|
Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;Wei-Chou Wang;Po-Hung Lin;Jing-Yuh Chen; 蔡榮輝 |
| 國立交通大學 |
2014-12-12T02:17:39Z |
InGaAs/AlAsSb/InGaAs 單能障結構穿隧電流之研究
|
鄭瑞煌; Cheng, Rui-huang; 陳衛國; Wei-Kuo Chen |
| 國立交通大學 |
2014-12-08T15:48:43Z |
InGaAs/GaAs quantum dots on (111)B GaAs substrates
|
Tsai, FY; Lee, CP |
| 國立交通大學 |
2014-12-08T15:44:24Z |
InGaAs/GaAs quantum wells and quantum dots on (111)B orientation
|
Tyan, SL; Lin, YG; Tsai, FY; Lee, CP; Shields, PA; Nicholas, RJ |
| 國立成功大學 |
2001 |
InGaAs/GaAs quantum wells and quantum dots on (111)B orientation
|
Tyan, Shing-Long; Lin, Yun-Ging; Tsai, Fu-Yi; Lee, Chien-Ping; Shields, Philip A.; Nicholas, Robin J. |
| 南台科技大學 |
1995 |
InGaAs/GaAs Quantum Wells Grown by Metal Organic Chemical Vapor Deposition Using Tertiarybutylarsine Sources
|
鄒文正; Yan-Kuin Su; Hrong kuan; Wen-Cheng Tzou |
| 國立交通大學 |
2014-12-12T02:20:52Z |
InGaAs/GaAs 量子井結構中晶格應變造成之缺陷能階電性分析
|
蔡秋韻; Chiu-Yun Tsai; 陳振芳; Jenn-Fang Chen |
| 國立成功大學 |
2005-07-11 |
InGaAs/GaAs(111) 與 InAs/GaAs(100) 量子點之螢光光譜分析
|
林昀靚; Lin, Yun-Ging |
| 國立交通大學 |
2014-12-12T02:35:01Z |
InGaAs/GaAs自組式垂直耦合雙量子點之穿隧效應與光學異向性
|
李柏元; Li, Po-Yuan; 鄭舜仁; Cheng, Shun-Jen |
| 國立交通大學 |
2014-12-12T02:23:25Z |
InGaAs/GaAs量子點與GaAsN/GaAs量子井的電性與光性研究
|
王錦雄; Jiin-Shung Wang; 陳振芳; Jenn-Fang Chen |
| 國立中山大學 |
1994 |
InGaAs/InGaAlAs、InGaAs/InP、與GaAs/InGaP 等異質結構的能帶排列
|
黃金花 |
| 大葉大學 |
2002 |
InGaAs/InP heterojunction band-offset measurement by electrochemical capacitance-voltage technique
|
黃俊達 |
| 國立成功大學 |
2006-01 |
InGaAsN metal-semiconductor-metal photodetectors with modulation-doped heterostructures
|
Hsu, S. H.; Su, Yan-Kuin; Chang, Shoou-Jinn; Chen, W. C.; Tsai, H. L. |
| 國立成功大學 |
2007-04 |
InGaAsN metal-semiconductor-metal photodetectors with transparent indium tin oxide Schottky contacts
|
Su, Yan-Kuin; Chen, Wei-Cheng; Chuang, Ricky Wenkuei; Hsu, Shuo-Hsien; Chen, Bing-Yang |
| 國立交通大學 |
2014-12-12T02:56:08Z |
InGaAsN/GaAs量子井之成份波動效應
|
謝佩珍; Pei-Chen Hsieh; 陳振芳; Jenn-Fang Chen |
| 國立彰化師範大學 |
2004 |
InGaAsN量子井雷射之模擬與分析
|
陳秀芬; 傅少甫; 郭艷光 |
| 國立交通大學 |
2014-12-08T15:15:49Z |
InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-mu m lasers
|
Li, A.; Liu, S. C.; Su, K. W.; Liao, Y. L.; Huang, S. C.; Chen, Y. F.; Huang, K. F. |
顯示項目 511566-511615 / 2348973 (共46980頁)
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