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顯示項目 511576-511625 / 2348973 (共46980頁)
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| 臺大學術典藏 |
2019-12-27T07:49:29Z |
InGaAs and Ge MOSFETs with high 庥 dielectrics
|
Lee, W.C.;Chang, P.;Lin, T.D.;Chu, L.K.;Chiu, H.C.;Kwo, J.;Hong, M.; Lee, W.C.; Chang, P.; Lin, T.D.; Chu, L.K.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 國立交通大學 |
2019-04-02T05:58:40Z |
InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D
|
Chang, Po-Chun; Hsiao, Chih-Jen; Lumbantoruan, Franky Juanda; Wu, Chia-Hsun; Lin, Yen-Ku; Lin, Yueh-Chin; Sze, Simon M.; Chang, Edward Yi |
| 國立臺灣科技大學 |
2009-11-02 |
InGaAs LDMOS Power Semiconductor Device Performances
|
Yidong Liu;Jiann-Shiun Yuan;Jason Steighner |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
InGaAs Metal Oxide Semiconductor Devices with Ga 2 O 3 (Gd 2 O 3) High-$κ$ Dielectrics for Science and Technology beyond Si CMOS
|
Hong, M;Kwo, J;Lin, TD;Huang, ML; Hong, M; Kwo, J; Lin, TD; Huang, ML; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:38Z |
InGaAs metal oxide semiconductor devices with Ga2O 3(Gd2O3) High-庥 dielectrics for science and technology beyond Si CMOS
|
Hong, M.;Kwo, J.;Lin, T.D.;Huang, M.L.; Hong, M.; Kwo, J.; Lin, T.D.; Huang, M.L.; MINGHWEI HONG |
| 國立交通大學 |
2017-04-21T06:49:47Z |
InGaAs Metal-Oxide-Semiconductor FETs with Self-Aligned Ni-Alloy Source/Drain
|
Wang, Shin-Yuan; Chien, Chao-Hsin; Lin, Jin-Ju; Chang, Chun-Yen |
| 臺大學術典藏 |
2019-12-27T07:49:35Z |
InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al 2O3/Ga2O3(Gd2O 3) as a gate dielectric
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Lin, T.D.;Chiu, H.C.;Chang, P.;Lee, W.C.;Chinag, T.H.;Kwo, J.;Tsai, W.;Hong, M.; Lin, T.D.; Chiu, H.C.; Chang, P.; Lee, W.C.; Chinag, T.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:13Z |
InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3 (Gd2O3) as a gate dielectric
|
Lin, TD;Chiu, HC;Chang, P;Lee, WC;Chiang, TH;Kwo, JR;Tsai, W;Hong, M; Lin, TD; Chiu, HC; Chang, P; Lee, WC; Chiang, TH; Kwo, JR; Tsai, W; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:11Z |
InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation
|
Chang, YC; Huang, ML; Lee, YJ; Lee, KY; Lin, TD; Hong, M; Kwo, J; Liao, CC; Cheng, KY; Lay, TS; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:43Z |
InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation
|
MINGHWEI HONG;Lay, T.S.;Cheng, K.Y.;Liao, C.C.;Kwo, J.;Hong, M.;Lin, T.D.;Lee, K.Y.;Lee, Y.J.;Huang, M.L.;Chang, Y.C.; Chang, Y.C.; Huang, M.L.; Lee, Y.J.; Lee, K.Y.; Lin, T.D.; Hong, M.; Kwo, J.; Liao, C.C.; Cheng, K.Y.; Lay, T.S.; MINGHWEI HONG |
| 國立臺灣海洋大學 |
2007-01 |
InGaAs quantum well saturable absorbers for diode-pumped passively Q-switched Nd YAG laser at 1123 nm
|
K. F. Huang; J. Y. Huang; H. C. Liang; K. W. Su; H. C. Lai; Y. F. Chen |
| 國立交通大學 |
2014-12-08T15:14:56Z |
InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd : YAG laser at 1123 nm
|
Huang, J. Y.; Liang, H. C.; Su, K. W.; Lai, H. C.; Chen, Y. -F.; Huang, K. F. |
| 國立交通大學 |
2018-08-21T05:53:11Z |
InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment
|
Chang, Po-Chun; Luc, Quang-Ho; Lin, Yueh-Chin; Lin, Yen-Ku; Wu, Chia-Hsun; Sze, Simon M.; Chang, Edward Yi |
| 元智大學 |
2007-06 |
InGaAs Sub-monolayer Quantum Dots VCSEL with Extremely Temperature Insensitivity for 2.125 Gb/s Application
|
賴芳儀; H. C. Kuo; H. W. Huang; S. C. Wang; G. R. Lin; J. Chi; N. A. Maleev; S. A. Blokhin |
| 臺大學術典藏 |
2007 |
InGaAs sub-monolayer quantum dots VCSEL with extremely temperature insensitivity for 2.125 Gb/s application
|
GONG-RU LIN; Blokhin, S.A.; Maleev, N.A.; Chi, J.; Lin, G.R.; Wang, S.C.; Huang, H.W.; Kuo, H.C.; Lai, F.-I. |
| 國立交通大學 |
2014-12-08T15:14:01Z |
InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications
|
Yang, Hung-Pin D.; Yeh, Zao-En; Lin, Gray; Kuo, Hao-Chung; Chi, Jim Y. |
| 國立交通大學 |
2014-12-12T02:15:27Z |
InGaAs 應變量子阱之光調制光譜研究
|
廖建智; Liaw, Chen-Chy; 楊賜麟 |
| 國立成功大學 |
2003 |
InGaAs 量子點其光電特性之研究
|
田興龍 |
| 國立交通大學 |
2014-12-12T01:40:19Z |
InGaAs(N)/GaAs多層量子井的電光性研究
|
曾淳俊; Tseng, Chun-Chun; 陳振芳 |
| 臺大學術典藏 |
2018-09-10T08:12:51Z |
InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOS
|
Hong, M;Kwo, J;Lin, TD;Huang, ML;Lee, WC;Chang, P; Hong, M; Kwo, J; Lin, TD; Huang, ML; Lee, WC; Chang, P; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:31Z |
InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOS
|
Hong, M.;Kwo, J.;Lin, T.D.;Huang, M.L.;Lee, W.C.;Chang, P.; Hong, M.; Kwo, J.; Lin, T.D.; Huang, M.L.; Lee, W.C.; Chang, P.; MINGHWEI HONG |
| 國立交通大學 |
2014-12-08T15:08:44Z |
InGaAs-Capped InAs-GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range
|
Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Mai, Shu-Cheng; Lin, Shih-Yen; Wu, Meng-Chyi |
| 國立高雄師範大學 |
1997 |
InGaAs-GaAs pseudomorphic heterostructure Transistor Prepared by MOVPE
|
Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Kun-Wei Lin,;Chin-Chuan Cheng; 蔡榮輝 |
| 國立高雄師範大學 |
1996 |
InGaAs-GaAs Pseudomorphic Heterostructure Transistor Prepared by MOVPE
|
Jung-Hui Tsai;Wen-Chau Liu;Shiou-Ying Cheng;Wei-Chou Wang;Po-Hung Lin;Jing-Yuh Chen; 蔡榮輝 |
| 國立交通大學 |
2014-12-12T02:17:39Z |
InGaAs/AlAsSb/InGaAs 單能障結構穿隧電流之研究
|
鄭瑞煌; Cheng, Rui-huang; 陳衛國; Wei-Kuo Chen |
| 國立交通大學 |
2014-12-08T15:48:43Z |
InGaAs/GaAs quantum dots on (111)B GaAs substrates
|
Tsai, FY; Lee, CP |
| 國立交通大學 |
2014-12-08T15:44:24Z |
InGaAs/GaAs quantum wells and quantum dots on (111)B orientation
|
Tyan, SL; Lin, YG; Tsai, FY; Lee, CP; Shields, PA; Nicholas, RJ |
| 國立成功大學 |
2001 |
InGaAs/GaAs quantum wells and quantum dots on (111)B orientation
|
Tyan, Shing-Long; Lin, Yun-Ging; Tsai, Fu-Yi; Lee, Chien-Ping; Shields, Philip A.; Nicholas, Robin J. |
| 南台科技大學 |
1995 |
InGaAs/GaAs Quantum Wells Grown by Metal Organic Chemical Vapor Deposition Using Tertiarybutylarsine Sources
|
鄒文正; Yan-Kuin Su; Hrong kuan; Wen-Cheng Tzou |
| 國立交通大學 |
2014-12-12T02:20:52Z |
InGaAs/GaAs 量子井結構中晶格應變造成之缺陷能階電性分析
|
蔡秋韻; Chiu-Yun Tsai; 陳振芳; Jenn-Fang Chen |
| 國立成功大學 |
2005-07-11 |
InGaAs/GaAs(111) 與 InAs/GaAs(100) 量子點之螢光光譜分析
|
林昀靚; Lin, Yun-Ging |
| 國立交通大學 |
2014-12-12T02:35:01Z |
InGaAs/GaAs自組式垂直耦合雙量子點之穿隧效應與光學異向性
|
李柏元; Li, Po-Yuan; 鄭舜仁; Cheng, Shun-Jen |
| 國立交通大學 |
2014-12-12T02:23:25Z |
InGaAs/GaAs量子點與GaAsN/GaAs量子井的電性與光性研究
|
王錦雄; Jiin-Shung Wang; 陳振芳; Jenn-Fang Chen |
| 國立中山大學 |
1994 |
InGaAs/InGaAlAs、InGaAs/InP、與GaAs/InGaP 等異質結構的能帶排列
|
黃金花 |
| 大葉大學 |
2002 |
InGaAs/InP heterojunction band-offset measurement by electrochemical capacitance-voltage technique
|
黃俊達 |
| 國立成功大學 |
2006-01 |
InGaAsN metal-semiconductor-metal photodetectors with modulation-doped heterostructures
|
Hsu, S. H.; Su, Yan-Kuin; Chang, Shoou-Jinn; Chen, W. C.; Tsai, H. L. |
| 國立成功大學 |
2007-04 |
InGaAsN metal-semiconductor-metal photodetectors with transparent indium tin oxide Schottky contacts
|
Su, Yan-Kuin; Chen, Wei-Cheng; Chuang, Ricky Wenkuei; Hsu, Shuo-Hsien; Chen, Bing-Yang |
| 國立交通大學 |
2014-12-12T02:56:08Z |
InGaAsN/GaAs量子井之成份波動效應
|
謝佩珍; Pei-Chen Hsieh; 陳振芳; Jenn-Fang Chen |
| 國立彰化師範大學 |
2004 |
InGaAsN量子井雷射之模擬與分析
|
陳秀芬; 傅少甫; 郭艷光 |
| 國立交通大學 |
2014-12-08T15:15:49Z |
InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-mu m lasers
|
Li, A.; Liu, S. C.; Su, K. W.; Liao, Y. L.; Huang, S. C.; Chen, Y. F.; Huang, K. F. |
| 國立成功大學 |
2000-11 |
InGaAsP Thin film microdisk Resonators Fabricated by Polymer Wafer Bonding for Wavelength Add-Drop Filters
|
Ma, Yong; Chang, Shih-Hui; Seoijin Park; Wang, Liwei; �Ho,� Seong-�Tiong |
| 國立中山大學 |
2006-07-12 |
InGaAsP/InGaAlAs非對稱針狀多重量子井應用於整合電致吸收調變器與光放大器之研製
|
李定國 |
| 臺大學術典藏 |
Dec-00 |
InGaAsP/InP laser diodes/superluminescent diodes with nonidentical quantum wells
|
Lin, Ching-Fuh;Wu, Bing-Ruey;Laih, Lih-Wen;Shih, Tien-Tsorng; Lin, Ching-Fuh; Wu, Bing-Ruey; Laih, Lih-Wen; Shih, Tien-Tsorng; Lin, Ching-Fuh; Wu, Bing-Ruey; Laih, Lih-Wen; Shih, Tien-Tsorng |
| 國立臺灣大學 |
2000-12 |
InGaAsP/InP laser diodes/superluminescent diodes with nonidentical quantum wells
|
Lin, Ching-Fuh; Wu, Bing-Ruey; Laih, Lih-Wen; Shih, Tien-Tsorng |
| 國立臺灣科技大學 |
1989 |
InGaAs單量子井調制光學特性研究
|
林得裕 |
| 國立中山大學 |
2008-06-30 |
InGaAs的電調制反射光譜
|
許智誠 |
| 國立中山大學 |
2011-07-15 |
InGaAs耦合量子點太陽電池研究
|
曾凱迪 |
| 國立臺灣大學 |
1996 |
InGaAs量子點及紅外線光電元件
|
李嗣涔 |
| 國立成功大學 |
2007-06-16 |
InGaAs量子點與量子井變功率螢光光譜研究
|
蔡忠剛; Tsai, Chung-Kang |
| 國立臺灣科技大學 |
2007 |
InGaN blue light-emitting diodes with ZnO nucleation layers prepared by the sol-gel method
|
Chen, L.-C.;Huang, J.-B.;Cheng, P.-J.;Hong, L.-S. |
顯示項目 511576-511625 / 2348973 (共46980頁)
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