| 東海大學 |
2012-06-03 |
0.18 μm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs
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Chou, H.-L.,?Su, P.C.,?Ng, J.C.W.,?Wang, P.L.,?Lu, H.T.,?Lee, C.J.,?Syue, W.J.,?Yang, S.Y.,?Tseng, Y.C.,?Cheng, C.C.,?Yao, C.W.,?Liou, R.S.a,?Jong, Y.C.a,?Tsai, J.L.,?Cai, J.,?Tuan, H.C.,?Huang, C.-F.,?Gong, J. |