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機構 日期 題名 作者
南台科技大學 2016-05 Resistive Switching Properties in Transparent Nonvolatile Indium Tin Oxide Thin Film Resistance Random Access Memories Chen, Mei-Li; Cheng, Chien-Min; Chen, Kai-Huang; Jong, Fuh-Cheng; Pan, Yi-Yun
國立成功大學 2018-04 Resistive switching properties of alkaline earth oxide-based memory devices Lee;Ke-Jing;Chang;Yu-Chi;Lee;Cheng-Jung;Wang;Li-Wen;Wang;Yeong-Her
國立成功大學 2022-07-25 Resistive switching properties of amorphous Sm2Ti2O7 thin film prepared by RF sputtering for RRAM applications Chen;Yu-Ta;Hsu;Tsung-Hsien;Huang;Cheng-Liang
國立成功大學 2022-12 Resistive switching properties of Mn-doped amorphous Nb2O5 thin films for resistive RAM application Tsai;Meng-Hung;Shih;Chia-Jung;Chang;Che-Wei;Chu;Yu-Tseng;Wu;You-Shen;Huang;Cheng-Liang
國立交通大學 2014-12-08T15:05:08Z Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films Lin, Chih-Yang; Lin, Chun-Chieh; Huang, Chun-Hsing; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立東華大學 2007-12 Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films 林群傑; Lin, Chun-Chieh; Lin, Chih-Yang ; Huang, Chun-Hsing; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:06:16Z Resistive switching properties of SrZrO(3)-based memory films Lin, Chun-Chieh; Lin, Chao-Cheng; Tu, Bing-Chung; Yu, Jung-Sheng; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立東華大學 2007-04 Resistive switching properties of SrZrO3-based memory films 林群傑; Lin, Chun-Chieh; Lin, Chao-Cheng ;Tu Bing-Chung ; Yu Jung-Sheng ; Lin Chen-Hsi ; Tseng, Tseung-Yuen
國立成功大學 2020-06 Resistive Switching Property of Organic-Inorganic Tri-Cation Lead Iodide Perovskite Memory Device Hsiao;Yuan-Wen;Wang;Shi-Yu;Huang;Cheng-Liang;Leu;Ching-Chich;Shih;Chuan-Feng
國立成功大學 2020 Resistive switching property of organic–inorganic tri-cation lead iodide perovskite memory device Hsiao, Y.-W.;Wang, S.-Y.;Huang, C.-L.;Leu, C.-C.;Shih, C.-F.
國立成功大學 2022 Resistive switching, endurance and retention properties of ZnO/HfO2 bilayer heterostructure memory device Jain, N.;Sharma, Sharma S.K.;Kumawat, R.;Jain, P.K.;Kumar, D.;Vyas, R.
臺大學術典藏 2018-09-10T07:28:12Z RESISTIVE, MAGNETIC, AND STRUCTURAL STUDIES OF TL0.5PB0.5(CA1-XMX)SR2CU2OY COMPOUNDS WITH M EQUAL TO THE NATURAL MIXTURE OF RARE-EARTH ELEMENTS Liu, R. S.;Wang, W. N.;Liang, J. M.;Wu, P. T.; Liu, R. S.; Wang, W. N.; Liang, J. M.; Wu, P. T.; RU-SHI LIU
國立臺灣大學 1975 Resistivity Anomalies for Ferromagnetic Metals at Curie Points 蘇德潤; Wu, T. M.; Su, Der-Ruenn; Wu, T. M.
國立臺灣大學 1974 Resistivity Anomalies for Ferromagnetic Metals at Curie Points (Continued) 蘇德潤; Su, Der-Ruenn
國立臺灣大學 1976 Resistivity Anomalies for Ferromagnetic Metals at Curie Points: II. Short-Range Magnetization Fluctuations 蘇德潤; Su, Der-Ruenn
國立臺灣大學 1977 Resistivity Anomalies for Ferromagnetic Metals near Curie Temperature 蘇德潤; Su, Der-Ruenn
國立臺灣大學 1979 Resistivity Anomaly of Transition Metals Interpreted by Uncertainty Principle 蘇德潤; Su, Der-Ruenn
淡江大學 1981-05 Resistivity Measurements on Aligned Amphiphilic Liquid Crystalline States Photinos, P. J.; Yu, L. J.; Saupe, A.
國立成功大學 2012-07 Resistivity-microstructure correlation of self-annealed electrodeposited copper thin films Alshwawreh, N.; Militzer, M.; Bizzotto, D.; Kuo, J. C.
國立成功大學 2020 Resistor-Based Temperature Sensing Chip with Digital Output Chang, K.-M.;Lin, Y.-J.;Wei, C.-L.;Chang, S.-J.
國立交通大學 2014-12-08T15:28:28Z Resistor-Less Design of Power-Rail ESD Clamp Circuit in Nanoscale CMOS Technology Yeh, Chih-Ting; Ker, Ming-Dou
國立交通大學 2017-04-21T06:49:46Z Resistor-Less Power-Rail ESD Clamp Circuit with Ultra-Low Leakage Current in 65nm CMOS Process Yeh, Chih-Ting; Ker, Ming-Dou
臺大學術典藏 2021-06-11T09:14:44Z Resituating the Trojan War: From Chaucer to Shakespeare Liu, Sophia Yashih
中華大學 2008 RESODEMT'S INFLUENCE TO THE DEVELOPMENT OF CULTURE CREATIVE INDUSTRY IN TAIWAN 賀力行; Ho, Li-Hsing
國立臺灣科技大學 2013 Resolution adjustable 3D scanner based on using stereo cameras Lin, T.-H.

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