臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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顯示項目 750231-750280 / 2349129 (共46983頁)
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機構	日期	題名	作者
國立臺灣大學	2005-01	Self-Aligned Co Nanoparticle Chains Supported by Single Crystalline Al2O3/NiAl(100) Template	Lin, W.C.; Kuo, C. C.; Ro, M.F.; Song, K. J.; Lin, Minn-Tsong
臺大學術典藏	2018-09-10T05:20:21Z	Self-aligned Co nanoparticle chains supported by single-crystalline Al2O3/NiAl(100) template	Lin, W. C.; Kuo, C. C.; Luo, M. F.; Song, K. J.; Lin, M. T.; Lin, W. C.; Kuo, C. C.; Luo, M. F.; Song, K. J.; Lin, M. T.; MINN-TSONG LIN
國立交通大學	2014-12-08T15:11:35Z	Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors	Zhang, Xingui; Guo, Huaxin; Lin, Hau-Yu; Cheng, Chao-Ching; Ko, Chih-Hsin; Wann, Clement H.; Luo, Guang-Li; Chang, Chun-Yen; Chien, Chao-Hsin; Han, Zong-You; Huang, Shih-Chiang; Chin, Hock-Chun; Gong, Xiao; Koh, Shao-Ming; Lim, Phyllis Shi Ya; Yeo, Yee-Chia
修平科技大學	2004	Self-Aligned Deposition process for ultrathin electroless barriers and copper films on low-k dielectric films	G. S. Chen;S. T. Chen;R. F. Louh;T. J. Yang;C. K. Lin
國立臺灣海洋大學	2007-07	Self-Aligned Enhancement-Mode and Parasite Depletion-Mode Heterojunction Doped-Channel FET for Low Power Supply DCFL Application	S. W. Tan; C. W. Liao
國立交通大學	2014-12-08T15:42:06Z	Self-aligned fabrication of thin-film transistors with field-induced drain	Yu, CM; Lin, HC; Lin, CY; Yeh, KL; Huang, TY; Lei, TF
國立臺灣海洋大學	2013	Self-aligned gate dielectric in carbon nanotube field-effect transistors by anodic oxidation of aluminium	Jeff T.H. Tsai;Wei-Syun Wang;Szu-Hung Chen;Chia-Liang Sun
臺大學術典藏	2018-09-10T07:34:14Z	Self-aligned inversion channel In 0.53 Ga 0.47 As n-MOSFETs with ALD-Al 2 O 3 and MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics	Chiu, HC;Lin, TD;Chang, P;Lee, WC;Chiang, CH;Kwo, J;Lin, YS;Hsu, Shawn SH;Tsai, W;Hong, M; Chiu, HC; Lin, TD; Chang, P; Lee, WC; Chiang, CH; Kwo, J; Lin, YS; Hsu, Shawn SH; Tsai, W; Hong, M; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:36Z	Self-aligned inversion channel In0.53Ga0.47As N-MOSFETs with ALD-Al2O3and MBE-Al2O3/Ga2O3(Gd2O3) as gate dielectrics	Chiu, H.C.;Lin, T.D.;Chang, P.;Lee, W.C.;Chiang, C.H.;Kwo, J.;Lin, Y.S.;Hsu, S.S.H.;Tsai, W.;Hong, M.; Chiu, H.C.; Lin, T.D.; Chang, P.; Lee, W.C.; Chiang, C.H.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; Tsai, W.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:01:21Z	Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectric	Chen, CP; Lin, TD; Lee, YJ; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏	2018-09-10T06:28:14Z	Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs MOSFET with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectric	Chen, Chih-Ping; Lin, Tsung-Da; Chang, Yao-Chung; Hong, Mingwhei; Kwo, J Raynien; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:39Z	Self-aligned inversion n-channel In0.2Ga0.8As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga2O3(Gd2O3) dielectric	Chen, C.P.; Lin, T.D.; Lee, Y.J.; Chang, Y.C.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:43Z	Self-aligned inversion n-channel In0.2Ga0.8As/GaAs MOSFET with TiN gate and Ga2O3 (Gd2O 3) dielectric	MINGHWEI HONG;Kwo, J.R.;Hong, M.;Chang, Y.-C.;Lin, T.-D.;Chen, C.-P.; Chen, C.-P.; Lin, T.-D.; Chang, Y.-C.; Hong, M.; Kwo, J.R.; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:01:19Z	Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2 O 3/Ga 2 O 3 (Gd 2 O 3 as gate dielectrics	Lin, TD; Chen, Christine P; Chiu, HC; Chang, Peter; Lin, CA; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:39Z	Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2O3/Ga2O3(Gd2O3) as gate dielectrics	MINGHWEI HONG;Tsai, W.;Kwo, J.;Hong, M.;Lin, C.A.;Chang, P.;Chiu, H.C.;Chen, C.P.;Lin, T.D.; Lin, T.D.; Chen, C.P.; Chiu, H.C.; Chang, P.; Lin, C.A.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:12:53Z	Self-aligned inversion-channel In 0.75 Ga 0.25 As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics	Lin, TD;Chiu, HC;Chang, P;Chang, YH;Wu, YD;Hong, M;Kwo, J; Lin, TD; Chiu, HC; Chang, P; Chang, YH; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:34:13Z	Self-aligned inversion-channel In 0.75 Ga 0.25 As MOSFETs using MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics	Lin, TD;Chiu, HC;Chang, P;Chang, YH;Lin, CA;Chang, WH;Kwo, J;Tsai, W;Hong, M; Lin, TD; Chiu, HC; Chang, P; Chang, YH; Lin, CA; Chang, WH; Kwo, J; Tsai, W; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:40:11Z	Self-aligned inversion-channel In0. 2Ga0. 8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3 (Gd2O3) as the gate dielectric	Chang, WH;Chiang, TH;Wu, YD;Hong, M;Lin, CA;Kwo, J; Chang, WH; Chiang, TH; Wu, YD; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG
國立臺灣大學	2011	Self-Aligned Inversion-Channel In0. 53Ga0. 47As Metal--Oxide--Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics	Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai
臺大學術典藏	2018-09-10T08:40:10Z	Self-Aligned Inversion-Channel In0. 53Ga0. 47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics	Chang, Pen;Chiu, Han-Chin;Lin, Tsung-Da;Huang, Mao-Lin;Chang, Wen-Hsin;Wu, Shao-Yun;Wu, Kang-Hua;Hong, Minghwei;Kwo, Jueinai; Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG
臺大學術典藏	2011	Self-Aligned Inversion-Channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics	Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai; Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai
國立臺灣大學	2011	Self-Aligned Inversion-Channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics	Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai
臺大學術典藏	2019-12-27T07:49:31Z	Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2 O3/Ga2O3(Gd2O 3) as the gate dielectric	Chang, W.H.; Chiang, T.H.; Wu, Y.D.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG; Chang, W.H.;Chiang, T.H.;Wu, Y.D.;Hong, M.;Lin, C.A.;Kwo, J.
臺大學術典藏	2019-12-27T07:49:25Z	Self-aligned inversion-channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as gate dielectrics	Chang, P.;Chiu, H.-C.;Lin, T.-D.;Huang, M.-L.;Wen-Hsin Chang;Wu, S.-Y.;Wu, K.-H.;Hong, M.;Kwo, J.; Chang, P.; Chiu, H.-C.; Lin, T.-D.; Huang, M.-L.; Wen-Hsin Chang, Wu, S.-Y.; Wu, K.-H.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2010	Self-aligned inversion-channel In0.75Ga0.25As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2O3/Ga2O3(Gd2O 3) and ALD-Al2O3 as gate dielectrics	Lin, T.D.;Chiu, H.C.;Chang, P.;Chang, Y.H.;Wu, Y.D.;Hong, M.;Kwo, J.; Lin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:35Z	Self-aligned inversion-channel In0.75Ga0.25As MOSFETs using MBE-Al2O3/Ga2O3(Gd 2O3) and ALD-Al2O3 as gate dielectrics	Lin, T.D.;Chiu, H.C.;Chang, P.;Chang, Y.H.;Lin, C.A.;Chang, W.H.;Kwo, J.;Tsai, W.;Hong, M.; Lin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Lin, C.A.; Chang, W.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2018-09-10T15:21:41Z	Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high $κ$ gate dielectric using a CMOS compatible process	Fu, CH;Lin, YH;Lee, WC;Lin, TD;Chu, RL;Chu, LK;Chang, P;Chen, MH;Hsueh, WJ;Chen, SH;others; Fu, CH; Lin, YH; Lee, WC; Lin, TD; Chu, RL; Chu, LK; Chang, P; Chen, MH; Hsueh, WJ; Chen, SH; others; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:18Z	Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high 庥 gate dielectric using a CMOS compatible process	Fu, C.H.;Lin, Y.H.;Lee, W.C.;Lin, T.D.;Chu, R.L.;Chu, L.K.;Chang, P.;Chen, M.H.;Hsueh, W.J.;Chen, S.H.;Brown, G.J.;Chyi, J.I.;Kwo, J.;Hong, M.; Fu, C.H.; Lin, Y.H.; Lee, W.C.; Lin, T.D.; Chu, R.L.; Chu, L.K.; Chang, P.; Chen, M.H.; Hsueh, W.J.; Chen, S.H.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2018-09-10T03:47:34Z	Self-aligned MSM low-temperature-grown GaAs traveling wave photodetector for 810 nm and 1230 nm	Gan, K.-G.; Shi, J.-W.; Chiu, Y.-J.; Sun, C.-K.; Bowers, J.E.; CHI-KUANG SUN
臺大學術典藏	2018-09-10T06:30:22Z	Self-aligned nanocrystalline silicon thin-film transistor with deposited n+ source/drain layer	Cheng, I.-C.; Wagner, S.; I-CHUN CHENG
臺大學術典藏	2008	Self-aligned nematic crystallization of poly(oxypropylene)amine intercalated silicates on toluene/water interface	Lee, Rong-Jer; Lin, Jiang-Jen; Cheng, Wen-Tung; Lee, Rong-Jer; Lin, Jiang-Jen; Cheng, Wen-Tung
國立臺灣大學	2008	Self-aligned nematic crystallization of poly(oxypropylene)amine intercalated silicates on toluene/water interface	Lee, Rong-Jer; Lin, Jiang-Jen; Cheng, Wen-Tung
國立交通大學	2014-12-08T15:18:09Z	Self-aligned platinum-silicide nanowires for biomolecule sensing	Ko, FH; Yeh, ZH; Chen, CC; Liu, TF
國立中山大學	2009-05	Self-Aligned Silicon-On-Insulator MOSFETs with Ω-Shaped Conductive Layer	Tzu-Feng Chang;Jyi-Tsong Lin;Yi-Chuen Eng;Chih-Hung Sun;Po-Hiesh Lin;Hsien-Nan Chiu;Hsuan-Hsu Chen;Chih-Hao Kuo
國立中山大學	2009-04	Self-Aligned Silicon-On-Insulator Transistors with Ω-Shaped Conductive Layer and Source/Drain-Tie: A Simulation Study	Tzu-Feng Chang;Jyi-Tsong Lin;Yi-Chuen Eng;Chih-Hao Kuo;Chih-Hung Sun;Po-Hiesh Lin;Hsien-Nan Chiu;Hsuan-Hsu Chen
國立中山大學	2009-07	Self-Aligned SOI MOSFETs with Ω-Shaped Conductive Layer and Source/Drain-Tie	Jyi-Tsong Lin;Tzu-Feng Chang;Yi-Chuen Eng;Hsuan-Hsu Chen;Chih-Hao Kuo;Chih-Hung Sun;Po-Hiesh Lin;Hsien-Nan Chiu
國立臺灣大學	2007	Self-aligned stylus with high sphericity for micro coordinate measurement	Tsai, Yao-Chuan; Chang, D.R.; Tsao, L.C.; Wu, Ming-Dao; Shih, Po-Jen; Shih, Wen-Pin
臺大學術典藏	2020-02-26T01:36:50Z	Self-aligned stylus with high sphericity for micro coordinate measurement	Tsai, Y.-C.;Chang, D.-R.;Tsao, L.-C.;Wu, M.-D.;Shih, P.-J.;Shih, W.-P.;Po-Jen Shih; Tsai, Y.-C.; Chang, D.-R.; Tsao, L.-C.; Wu, M.-D.; Shih, P.-J.; Shih, W.-P.; PO-JEN SHIH
國立交通大學	2014-12-08T15:16:52Z	Self-aligned tantalum oxide nanodot arrays through anodic alumina template	Wu, CT; Ko, FH; Hwang, HY
臺大學術典藏	2020-06-11T06:16:01Z	Self-aligned top-gate amorphous In-Ga-Zn-O thin film transistors	Wu, C.-H.;Hsieh, H.-H.;Wu, C.-C.; Wu, C.-H.; Hsieh, H.-H.; Wu, C.-C.; CHUNG-CHIH WU
臺大學術典藏	2009	Self-aligned Top-gate Coplanar In-Ga-Zn-O Thin Film Transistors	Wu, Cheng-Han; Hsieh, Hsing-Hung; Chien, Chih-Wei; Wu, Chung-Chih; Wu, Cheng-Han; Hsieh, Hsing-Hung; Chien, Chih-Wei; Wu, Chung-Chih
國立臺灣大學	2009	Self-aligned Top-gate Coplanar In-Ga-Zn-O Thin Film Transistors	Wu, Cheng-Han; Hsieh, Hsing-Hung; Chien, Chih-Wei; Wu, Chung-Chih
國立交通大學	2014-12-16T06:15:18Z	Self-aligned top-gate thin film transistors and method for fabricating same	Zan Hsiao-Wen; Chen Wei-Tsung; Chou Cheng-Wei; Tsai Chuang-Chuang
國立中山大學	2008-05	Self-aligned π-shaped Source/Drain Ultra-thin SOI MOSFETs	Yi-Chuen Eng;Jyi-Tsong Lin;Hau-Yuan Huang;Shiang-Shi Kang;Po-Hsieh Lin;Kung-Kai Kao
臺大學術典藏	2021-03-12T08:41:01Z	Self-aligned, extremely high frequency III-V metal-oxide-semiconductor field-effect transistors on rigid and flexible substrates	JUN-CHAU CHIEN; 簡俊超; JUN-CHAU CHIEN
國立交通大學	2014-12-16T06:14:31Z	Self-alignment manufacturing method of the microlens and the aperture using in optical devices	Chiu; Yi; Hsu; Wen Syang; Chang; Yu-Ru
國立交通大學	2014-12-16T06:16:13Z	Self-alignment manufacturing method of the microlens and the aperture using in optical devices	Chiu, Yi; Hsu, Wen Syang; Chang, Yu-Ru
臺大學術典藏	2018-09-10T09:47:50Z	Self-amplitude and self-phase modulation of the charcoal mode-locked erbium-doped fiber lasers	Wu, C.-I.; Lin, G.-R.; CHIH-I WU; GONG-RU LIN; Lin, Y.-H.;Lo, J.-Y.;Tseng, W.-H.;Wu, C.-I.;Lin, G.-R.; Lin, Y.-H.; Lo, J.-Y.; Tseng, W.-H.
臺大學術典藏	2020-06-11T06:38:05Z	Self-amplitude and self-phase modulation of the charcoal mode-locked erbium-doped fiber lasers	Lin, Y.-H.;Lo, J.-Y.;Tseng, W.-H.;Wu, C.-I.;Lin, G.-R.; Lin, Y.-H.; Lo, J.-Y.; Tseng, W.-H.; Wu, C.-I.; Lin, G.-R.; GONG-RU LIN
國立政治大學	2008-08	Self-Animating Images: Illusory Motion Using Repeated Asymmetric Patterns	紀明德

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