| 國立交通大學 |
2014-12-08T15:10:06Z |
Characteristics of In(Ga)As quantum ring infrared photodetectors
|
Ling, H. S.; Wang, S. Y.; Lee, C. P.; Lo, M. C. |
| 國立臺灣師範大學 |
2014-10-30T09:36:03Z |
Characteristics of In-Ge-Sb-Sn-Te Thin Film Used for Phase Change Optical Recording Media
|
Ou, Sin-Liang; Cheng, Chin-Pao; Yeh, Chin-Yen; Chung, Chung-Jen; Kao, Kuo-Sheng; Lin, Re-Ching |
| 國立成功大學 |
2005-06 |
Characteristics of In0.425Al0.575As-InxGa(1-x) as metamorphic HEMTs with pseudomorphic and symmetrically graded channels
|
Hsu, Wei-Chou; Chen, Y. J.; Lee, C. S.; Wang, T. B.; Huang, J. C.; Huang, D. H.; Su, K. H.; Lin, Y. S.; Wu, C. L. |
| 國立東華大學 |
2005 |
Characteristics of In0.425Al0.575As/ InXGa1-XAs metamorphic HEMTs with pseudomorphic and symmetrically- graded channel
|
Lin,Y. S.; Wu,C. L.; Hsu,W. C.; Su,K. H.; Huang,D. H.; Huang,J. C.; Wang,T. B.; Lee,C. S.; Chen,Y. J. |
| 國立成功大學 |
2004-01 |
Characteristics of In0.52Al0.48As/InxGa1-xAs HEMT's with various InxGa1-xAs channels
|
Chen, Yen-Wei; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Chen, Yeong-Jia |
| 國立成功大學 |
2004-05 |
Characteristics of In0.52Al0.48As/InxGa1-xAsyP1-y/ In0.52Al0.48As high electron-mobility transistors
|
Chen, Yen-Wei; Hsu, W. C.; Chen, Y. J.; Hsu, R. T.; Wu, Yue-Huei; Lin, Yu-Shyan |
| 國立交通大學 |
2019-10-05T00:08:48Z |
Characteristics of In0.7Ga0.3As MOS Capacitors Obtained using Hydrochloric Acid Treatment, Ammonium Sulfide Passivation, Methanol Treatment, and Forming Gas Annealing
|
Chung, Sheng-Ti; Huang, Yi-Chin; Fu, Yen-Chun; Lee, Yao-Jen; Chao, Tien-Sheng |
| 臺大學術典藏 |
2018-09-10T07:00:19Z |
Characteristics of indium-tin oxide thin films grown on flexible plastic substrates at room temperature
|
Wang, L.M.; Chen, Y.-J.; Liao, J.-W.; Wang, L.M.; Chen, Y.-J.; Liao, J.-W.; LI-MIN WANG |
| 大葉大學 |
2008-03 |
Characteristics of indium–tin oxide thin films grown on flexible plastic substrates at room temperature
|
Wang, Li-Min;Chen, Ying-Jaw;Liao, Jyh-Wei |
| 大葉大學 |
2005-10 |
Characteristics of indium–tin oxide thin films grown on flexible plastic substrates at room temperature
|
Wang, L. M.;Chen, Ying-Jaw;Liao, Jyh-Wei |
| 國立成功大學 |
2013-04 |
Characteristics of Indoor Aerosols in College Laboratories
|
Chen, Shui-Jen; Lin, Ta-Chang; Tsai, Jen-Hsiung; Hsieh, Lien-Te; Cho, Jyuong-Yong |
| 國立成功大學 |
2000-05-15 |
Characteristics of indoor and outdoor airborne fungi at suburban and urban homes in two seasons
|
Wu, Pei-Chih; Su, Huey-Jen Jenny; Lin, Chia-Yin |
| 國立東華大學 |
2004 |
Characteristics of InGa (N) As 9 VCSELs for fiber optic applications
|
祁錦雲; Jim-Yong Chi; A. Kovsh; CP Sung; JS Wang; JF Chen;TD Lee; JY Chi |
| 元智大學 |
2008-06 |
Characteristics of InGaAs Submonolayer Quantum-Dot and InAs Quantum-Dot Photonic-Crystal Veritcal –Cavity Surface-Emitting Lasers
|
賴芳儀; Hung-Pin D. Yang; I.-Chen Hsu; Ya-Hsien Chang; Hsin-Chieh Yu; Gray Lin; Ru-Shang Hsiao; Nikolai A. Maleev; Sergej A. Blokhin; Hao-Chung Kuo; Jim Y. Chi |
| 國立東華大學 |
2008 |
Characteristics of InGaAs Submonolayer Quantum-Dot and InAs Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers
|
祁錦雲; Jim-Yong Chi;Hung-Pin D. Yang; I.-Chen Hsu; Ya-Hsien Chang; Fang-I Lai; Hsin-Chieh Yu; Gray Lin; Ru-Shang Hsiao; Nikolai A. Maleev; Sergej A. Blokhin; Hao-Chung Kuo |
| 國立交通大學 |
2014-12-08T15:12:14Z |
Characteristics of InGaAs submonolayer quantum-dot and InAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers
|
Yang, Hung-Pin D.; Hsu, I. -Chen; Chang, Ya-Hsien; Lai, Fang-I; Yu, Hsin-Chieh; Lin, Gray; Hsiao, Ru-Shang; Maleev, Nikolai A.; Blokhin, Sergej A.; Kuo, Hao-Chung; Chi, Jim Y. |
| 國立成功大學 |
2008-05 |
Characteristics of InGaAs submonolayer quantum-dot and InAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers
|
Yang, Hung-Pin D.; Hsu, I. Chen; Chang, Ya-Hsien; Lai, Fang-I; Yu, Hsin-Chieh; Lin, Gray; Hsiao, Ru-Shang; Maleev, Nikolai A.; Blokhin, Sergej A.; Kuo, Hao-Chung; Chi, Jim-Yong |
| 國立成功大學 |
2011-07-04 |
Characteristics of InGaN-based concentrator solar cells operating under 150X solar concentration
|
Yang, Chih-Ciao; Jang, C. H.; Sheu, Jinn-Kong; Lee, Ming-Lun; Tu, Shang-Ju; Huang, Feng-Wen; Yeh, Yu-Hsiang; Lai, Wei-Chih |
| 國立成功大學 |
2012 |
Characteristics of InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights
|
Yu, Sheng-Fu; Chang, Sheng-Po; Chang, Shoou-Jinn; Lin, Ray-Ming; Wu, Hsin-Hung; Hsu, Wen-Ching |
| 國立成功大學 |
2011 |
Characteristics of InGaNsapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers
|
Yang, Chih-Ciao; Sheu, Jinn-Kong; Huanga, Min-Shun; Tua, Shang-Ju; Huanga, Feng-Wen; Changa, Kuo-Hua; Lee, Ming-Lun; Lai, Wei-Chih |
| 國立高雄師範大學 |
2002-01 |
Characteristics of InGaP/GaAs co-Integrated d-doped heterojunction bipolar transistor and doped-channel field effect transistor
|
Jung-Hui Tsai; 蔡榮輝 |
| 國立成功大學 |
2000-03 |
Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor
|
Chen, Jing-Yuh; Wang, Wei-Chou; Pan, Hsi-Jen; Feng, Shun-Ching; Yu, Kuo-Hui; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006-05 |
Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatments
|
Fu, Ssu-I; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立高雄師範大學 |
1996 |
Characteristics of InGaP/GaAs single-heterojunction bipolar transistor with zero potential spike by d-doped sheet
|
Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu;H. R. Chen; 蔡榮輝 |
| 國立高雄師範大學 |
2008 |
Characteristics of InGaP/InGaAs complementary pseudomorphic doped-channel HFETs
|
Jung-Hui Tsai;Chien-Ming Li; 蔡榮輝 |
