修平科技大學 |
2007 |
Deviation of phenomenological equations for the magnetic properties of La1-xNdxPb0.3MnO3 compounds
|
C. R. Ou;S. L. Young;H. Z. Chen;M. C. Kao;C. H. Lin;C. Y. Shen;Lance Horng,;C. C. Lin;J. B. Shi |
國家衛生研究院 |
2009-09 |
Deviations from linearity in statistical evaluation of linearity in assay validation
|
Liu, JP;Chow, SC;Hsieh, TC |
國立交通大學 |
2015-07-21T11:21:13Z |
DEVIATIONS FROM PUT-CALL PARITY AND VOLATILITY PREDICTION: EVIDENCE FROM THE TAIWAN INDEX OPTION MARKET
|
Chen, Chin-Ho; Chung, Huimin; Yuan, Shu-Fang |
國立交通大學 |
2014-12-08T15:01:28Z |
Deviations from quantized Hall conductivity and current density distribution in finite 2DEG samples
|
Bartos, I; Rosenstein, B |
國立交通大學 |
2019-04-02T05:59:11Z |
Deviations from quantized Hall conductivity and current density distribution in finite 2DEG samples
|
Bartos, I; Rosenstein, B |
國立交通大學 |
2019-06-03T01:08:36Z |
Deviatoric deformation kinetics in high entropy alloy under hydrostatic compression
|
Huang, E-Wen; Lin, Chih-Ming; Juang, Jenh-Yih; Chang, Yao-Jen; Chang, Yuan-Wei; Wu, Chan-Sheng; Tsai, Che-Wei; Yeh, An-Chou; Shieh, Sean R.; Wang, Ching-Pao; Chuang, Yu-Chun; Liao, Yen-Fa; Zhang, Dongzhou; Huang, Tony; Tu-Ngoc Lam; Chen, Yi-Hung |
國立成功大學 |
2019 |
Deviatoric deformation kinetics in high entropy alloy under hydrostatic compression
|
Huang, E.-W.;Lin, C.-M.;Juang, Juang J.-Y.;Chang, Y.-J.;Chang, Y.-W.;Wu, C.-S.;Tsai, C.-W.;Yeh, A.-C.;Shieh, Shieh S.R.;Wang, C.-P.;Chuang, Y.-C.;Liao, Y.-F.;Zhang, D.;Huang, T.;Lam, T.-N.;Chen, Y.-H. |
國立交通大學 |
2014-12-08T15:13:15Z |
Device and circuit level suppression techniques for random-dopant-induced static noise margin fluctuation in 16-nm-gate SRAM cell
|
Lee, Kuo-Fu; Li, Yiming; Li, Tien-Yen; Su, Zhong-Cheng; Hwang, Chin-Hong |
國立交通大學 |
2014-12-08T15:30:35Z |
Device and Circuit Performance Estimation of Junctionless Bulk FinFETs
|
Han, Ming-Hung; Chang, Chun-Yen; Chen, Hung-Bin; Cheng, Ya-Chi; Wu, Yung-Chun |
國立交通大學 |
2014-12-08T15:04:18Z |
DEVICE AND CIRCUIT SIMULATION OF ANOMALOUS DX TRAP EFFECTS IN DCFL AND SCFL HEMT INVERTERS
|
WANG, TH; WU, SJ; HUANG, CM |
國立交通大學 |
2014-12-16T06:13:58Z |
Device and method for diffusion optical tomography
|
Fang Wai-Chi; Chen Tien-Ho; Kang Shih; Wu Shih-Yang; Cheng Ching-Ju |
國立交通大學 |
2014-12-16T06:14:58Z |
DEVICE AND METHOD FOR DIFFUSION OPTICAL TOMOGRAPHY
|
FANG Wai-Chi; CHEN Tien-Ho; KANG Shih; WU Shih-Yang; CHENG Ching-Ju |
國家衛生研究院 |
2007-04-03 |
Device and method for digitizing gamma ray energy and characterizing peak time and decay time constant without the use of ADC
|
Guo, XQ;Kao, CM;Hsiau, Zk;Chen, CT |
國家衛生研究院 |
2008-03-11 |
Device and method for digitizing PET radiation events
|
Guo, XQ;Kao, CM;Hsiau, Zk;Chen, CT |
國立交通大學 |
2014-12-16T06:15:25Z |
DEVICE AND METHOD FOR EXPRESSING ROBOT AUTONOMOUS EMOTIONS
|
SONG Kai-Tai; Han Meng-Ju; Lin Chia-How |
國立交通大學 |
2014-12-16T06:15:23Z |
DEVICE AND METHOD FOR FABRICATING MICRO ARTICLES
|
FAN SHIH-KANG; LIN TING-HSU; LIN JING-WEI; WU CHIH-MING |
國立交通大學 |
2014-12-16T06:14:21Z |
Device and method for integrating sound effect processing and active noise control
|
Bai; Mingsian R.; Ou; Kuen-Ying; Lin; Jain-Liang |
國立交通大學 |
2014-12-16T06:16:06Z |
Device and method for integrating sound effect processing and active noise control
|
Bai, Mingsian R.; Ou, Kuen-Ying; Lin, Jain-Liang |
淡江大學 |
2014-07 |
Device and method for measuring distribution of atomic resolution deformation
|
Jang, Bong Kyun;Kim, Jae-Hyun;Lee, Hak-Joo;Kim, Kyung-Suk;Wang, Chien-Kai |
淡江大學 |
2015-04-07 |
Device and method for measuring distribution of atomic resolution deformation
|
Bong Kyun Jang; Jae-Hyun Kim; Hak-Joo Lee; Kyung-Suk Kim; Chien-Kai Wang |
臺大學術典藏 |
2018-09-10T15:25:46Z |
Device Architecture and Biosensing Applications for Attractive One- and Two-Dimensional Nanostructures
|
Liao, Chun-Da; Tsai, Tien-Chun; Lu, Yi-Ying; Chen, Yit-Tsong; YIT-TSONG CHEN |
國立臺灣科技大學 |
2018 |
Device array layout synthesis with nonlinear gradient compensation for a high-accuracy current-steering DAC
|
Yu, T.-C.;Fang, S.-Y.;Chen, Chen C.-C.;Sun, Y.;Chen, P. |
國立交通大學 |
2014-12-08T15:17:01Z |
Device characteristics and aggravated negative bias temperature instability in p-channel metal-oxide-semiconductor field-effect transistors with uniaxial compressive strain
|
Lu, CY; Lin, HC; Chang, YF; Huang, TY |
臺大學術典藏 |
2021-01-27T07:49:42Z |
Device characteristics and material developments of indoor photovoltaic devices
|
Venkateswararao, A.;Ho, J.K.W.;So, S.K.;Liu, S.-W.;Wong, K.-T.; Venkateswararao, A.; Ho, J.K.W.; So, S.K.; Liu, S.-W.; Wong, K.-T.; KEN-TSUNG WONG |
國立成功大學 |
2004-07 |
Device characteristics of GaAs-based heterojunction bipolar transistors using an InGaAs/GaAsP strain-compensated layer as a base material
|
Wu, Cheng-Hsien; Su, Yan-Kuin; Chang, Shoou-Jinn; Huang, Ying-Sheng; Hsu, Ying-Sheng |