| 國立交通大學 |
2014-12-08T15:40:11Z |
Electrical characteristics of glucose-sensitive diode arrays based on WO3 and IrO2 for microsensor applications
|
Chao, SC |
| 國立成功大學 |
1998-05 |
Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers
|
Lin, Y. S.; Shieh, H. M.; Hsu, Wei-Chou; Su, J. S.; Huang, J. Z.; Wu, Y. H.; Ho, S. D.; Lin, W. |
| 國立交通大學 |
2017-04-21T06:49:32Z |
Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure
|
Funamiz, K.; Lin, Y. C.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Sugii, N.; Chang, E. Y.; Hattori, T.; Iwai, H. |
| 國立交通大學 |
2014-12-08T15:10:28Z |
Electrical Characteristics of High Performance SPC and MILC p-Channel LTPS-TFT with High-kappa Gate Dielectric
|
Ma, Ming-Wen; Chiang, Tsung-Yu; Yeh, Chi-Ruei; Chao, Tien-Sheng; Lei, Tan-Fu |
| 國立交通大學 |
2014-12-08T15:45:06Z |
Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 angstrom
|
Wu, YH; Yang, MY; Chin, A; Chen, WJ; Kwei, CM |
| 國立聯合大學 |
2004 |
Electrical characteristics of high-k HfO2 gate dielectrics prepared by oxidation in HNO3 followed by rapid thermal annealing in N2
|
胡振國, C.H. Chang, L.S. Lee, M.J. Tsai and J.G. Hwu |
| 國立交通大學 |
2019-04-03T06:38:47Z |
Electrical characteristics of InGaZnO thin film transistor prepared by co-sputtering dual InGaZnO and ZnO targets
|
Tiwari, Nidhi; Chauhan, Ram Narayan; Liu, Po-Tsun; Shieh, Han-Ping D. |
| 國立中山大學 |
2006 |
Electrical Characteristics of Liquid Phase Deposited TiO2 Films on GaAs Substrate with (NH4)2Sx treatment
|
Ming-Kwei Lee; Chih-Feng Yen; Jung-Jie Huang |
| 國立中山大學 |
2007 |
Electrical Characteristics of Liquid-Phase-Deposited Titanium Oxide Films on (NH4)2Sx-Treated InP Substrate
|
Ming-Kwei Lee; Jung-Jie Huang; Chih-Feng Yen |
| 國立交通大學 |
2014-12-08T15:40:32Z |
Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric
|
Chang, KM; Yang, WC; Tsai, CP |
| 國立中山大學 |
2005-11 |
Electrical Characteristics of LPD TiO2 Films on GaAs Substrate with (NH4)2Sx treatment
|
Ming-Kwei Lee;Chih-Feng Yen;Jung-Jie Huang |
| 國立交通大學 |
2014-12-08T15:36:59Z |
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
|
Quang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2014-12-08T15:24:03Z |
Electrical Characteristics of Nanoscale Multi-Fin Field Effect Transistors with Different Fin Aspect Ratio
|
Cheng, Hui-Wen; Hwang, Chih-Hong; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:36:18Z |
Electrical characteristics of Ni Ohmic contact on n-type GeSn
|
Li, H.; Cheng, H. H.; Lee, L. C.; Lee, C. P.; Su, L. H.; Suen, Y. W. |
| 國立交通大學 |
2014-12-08T15:45:55Z |
Electrical characteristics of polyoxide prepared by N-2 preannealing
|
Chang, KM; Lee, TC; Wang, JY |
| 國立中山大學 |
2006 |
Electrical characteristics of postmetallization-annealed MOCVD-TiO2 films on ammonium sulfide-treated GaAs
|
Ming-Kwei Lee; Chih-Feng Yen; Jung-Jie Huang; Shi-Hao Lin |
| 國立中山大學 |
2007 |
Electrical Characteristics of Strontium Titanate Films Prepared by Liquid Phase Deposition
|
Ming-Kwei Lee; Hung-Chang Lee; Zhen-Hui Lee |
| 國立交通大學 |
2014-12-08T15:04:37Z |
ELECTRICAL CHARACTERISTICS OF TEXTURED POLYSILICON OXIDE PREPARED BY A LOW-TEMPERATURE WAFER LOADING AND N-2 PREANNEALING PROCESS
|
WU, SL; LIN, TY; LEE, CL; LEI, TF |
| 國立交通大學 |
2014-12-08T15:12:55Z |
Electrical characteristics of the HfAlON gate dielectric with interfacial UV-ozone oxide
|
Chen, Yung-Yu; Fu, Wen-Yu; Yeh, Ching-Fa |
| 國立交通大學 |
2014-12-08T15:43:27Z |
Electrical characteristics of thin cerium oxide film on silicon substrate by reactive DC sputtering
|
Pan, TM; Chien, CH; Lei, TF; Chao, TS; Huang, TY |
| 國立交通大學 |
2014-12-08T15:36:22Z |
Electrical characteristics of thin HfO(2) gate dielectrics prepared using different pre-deposition surface treatments
|
Chen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY |
| 國立交通大學 |
2019-04-02T06:00:17Z |
Electrical characteristics of thin HfO2 gate dielectrics prepared using different pre-deposition surface treatments
|
Chen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:03:33Z |
ELECTRICAL CHARACTERISTICS OF THIN-FILM TRANSISTORS WITH DOUBLE-ACTIVE-LAYER STRUCTURE
|
TSAI, MJ; WANG, PW; SU, HP; CHENG, HC |
| 國立臺灣大學 |
2004 |
Electrical characteristics of ultra-thin gate oxides (<3 nm) prepared by direct current superimposed with alternating-current anodization
|
Chen, Zhi-Hao; Huang, Szu-Wei; Hwu, Jenn-Gwo |
| 國立聯合大學 |
2004 |
Electrical Characteristics of Ultra-thin Gate Oxides (<3nm) Prepared by Direct Current Superposed with Alternating-current Anodization
|
胡振國, Z.H.Chen, S.W.Huang, and J.G.Hwu |
