| 國立聯合大學 |
2010 |
Electrical bistability of polystyrene thin films embedded with low-dimensional nanostructures
|
You-Yuan Lin, Jyh-Liang Wang, and Yi-Sheng Lai*, |
| 國立交通大學 |
2014-12-08T15:10:38Z |
Electrical bistable memory device based on a poly(styrene-b-4-vinylpyridine) nanostructured diblock copolymer thin film
|
Huang, Ching-Mao; Liu, Yung-Sheng; Chen, Chen-Chia; Wei, Kung-Hwa; Sheu, Jeng-Tzong |
| 國立交通大學 |
2014-12-16T06:15:01Z |
ELECTRICAL CALIBRATED RADIOMETER
|
HOU Kuan-Chou; Ou-Yang Mang; Chiou Jin-Chern |
| 臺北醫學大學 |
2015-06-04 |
Electrical Cardiometry in 24-hour ultra-marathon performance
|
Chang, Ming-Long; 張明龍 |
| 臺大學術典藏 |
1990-10 |
Electrical characterisation of the insulating property of Ta2O5 in Al-Ta2O5-SiO2-Si capacitors by a low-frequency
|
Hwu, J.-G.; Lin, S.-T.; Hwu, J.-G.; Lin, S.-T.; HwuJG |
| 國立臺灣大學 |
1990-10 |
Electrical characterisation of the insulating property of Ta2O5 in Al-Ta2O5-SiO2-Si capacitors by a low-frequency
|
Hwu, J.-G.; Lin, S.-T. |
| 國立交通大學 |
2017-04-21T06:49:20Z |
Electrical Characteristic and Power Consumption Fluctuations of Trapezoidal Bulk FinFET Devices and Circuits Induced by Random Line Edge Roughness
|
Chen, Chieh-Yang; Huang, Wen-Tsung; Li, Yiming |
| 國立虎尾科技大學 |
2006 |
Electrical characteristic enhancement of metal-oxide-semiconductor devices by incorporating WON buffer layer at HfTaSiON/Si interface
|
Cheng, Chin-Lung;Chang-Liao, Kuei-Shu;Chang, Hsin-Chun;Wang, Tien-Ko |
| 國立交通大學 |
2015-07-21T11:20:49Z |
Electrical characteristic fluctuation of 16-nm-gate high-kappa/metal gate bulk FinFET devices in the presence of random interface traps
|
Hsu, Sheng-Chia; Li, Yiming |
| 國立交通大學 |
2019-04-03T06:44:24Z |
Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants
|
Huang, Wen-Tsung; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:39Z |
Electrical characteristic fluctuations in sub-45nm CMOS devices
|
Yang, Fu-Liang; Hwang, Jiunn-Ren; Li, Yiming |
| 國立交通大學 |
2019-05-02T00:25:47Z |
Electrical Characteristic of AlGaN/GaN High-Electron-Mobility Transistors With Recess Gate Structure
|
Shrestha, Niraj Man; Li, Yiming; Suemitsu, Tetsuya; Samukawa, Seiji |
| 國立交通大學 |
2017-04-21T06:48:35Z |
Electrical Characteristic of InGaAs Multiple-Gate MOSFET Devices
|
Huang, Cheng-Hao; Li, Yiming |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Electrical characteristics analysis at "oxide flat-band voltage" for Al-SiO 2-Si capacitor
|
Lu, H.-W.;Chen, T.-Y.;Hwu, J.-G.; Lu, H.-W.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 國立成功大學 |
2012-10 |
Electrical characteristics analysis of various cancer cells using a microfluidic device based on single-cell impedance measurement
|
Hong, Jhih-Lin; Lan, Kung-Chieh; Jang, Ling-Sheng |
| 國立交通大學 |
2014-12-08T15:03:02Z |
Electrical characteristics and annealing study of boron-doped polycrystalline diamond films
|
Chen, SH; Chen, SL; Tsai, MH; Shyu, JJ; Chen, CF |
| 國立交通大學 |
2014-12-08T15:02:01Z |
Electrical characteristics and deep-level admittance spectroscopies of low-temperature grown GaAs p-i-n structures
|
Chen, JF; Chen, NC; Wang, PY; Tsai, MH |
| 國立交通大學 |
2014-12-08T15:16:57Z |
Electrical characteristics and reliability of multi-channel polycrystalline silicon thin-film transistors
|
Shieh, MS; Sang, JY; Chen, CY; Wang, SD; Lei, TF |
| 國立交通大學 |
2014-12-08T15:38:26Z |
Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate
|
Yu, XF; Zhu, CX; Li, MF; Chin, A; Du, AY; Wang, WD; Kwong, DL |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Electrical characteristics and temperature response of Al 2O 3 gate dielectrics with and without nitric acid compensation
|
Hwu, J.-G.; JENN-GWO HWU; Lin, C.-C.;Hwu, J.-G.; Lin, C.-C. |
| 國立交通大學 |
2014-12-08T15:08:18Z |
Electrical characteristics dependence on the channel fin aspect ratio of multi-fin field effect transistors
|
Cheng, Hui-Wen; Li, Yiming |
| 國立中山大學 |
2005 |
Electrical characteristics improvement of oxygen annealed MOCVD-TiO2 films
|
Ming-Kwei Lee; Jung-Jie Huang; Tsung-Shun Wu |
| 國立交通大學 |
2014-12-08T15:49:07Z |
Electrical characteristics of (Pb,Sr)TiO3 positive temperature coefficient ceramics
|
Lu, YY; Tseng, TY |
| 國立臺灣海洋大學 |
1995-02 |
Electrical Characteristics of (Sr 0.2 Ba 0.8 )TiO 3 Positive Temperature Coefficient of Resistivity Materials Prepared by Microwave Sintering
|
Horng‐Yi Chang;Kuo‐Shung Liu;I‐Nan Lin |
| 國立東華大學 |
2005-08 |
Electrical characteristics of -doping InGaP/GaAs heterojunction-emitter bipolar transistor
|
Lin,Y. S.; Hsu,W. C.; Huang,D. H.; Wang, T. B.; Su,K. H. |
