| 國立臺灣大學 |
2000 |
Epitaxial GaNxAs1?x layer formed by pulsed-laser irradiation of GaAs in an ambient nitrogen gas
|
Hung, W K; Chern, M Y; Chen, Y F |
| 國立交通大學 |
2014-12-08T15:30:35Z |
Epitaxial Germanium on SOI Substrate and Its Application of Fabricating High I-ON/I-OFF Ratio Ge FinFETs
|
Chung, Cheng-Ting; Chen, Che-Wei; Lin, Jyun-Chih; Wu, Che-Chen; Chien, Chao-Hsin; Luo, Guang-Li; Kei, Chi-Chung; Hsiao, Chien-Nan |
| 中原大學 |
1998-04 |
Epitaxial Growth and Characteristics of the YBCO/STO/YBCO Tunneling Junctions
|
T. S. Lai;W. F. Laio;H. F. Cheng;I. N. Lin |
| 中原大學 |
1997-08 |
Epitaxial Growth and Characteristics of the YBCO/STO/YBCO Tunneling Junctions
|
Lai, T. S.;Liao, W. F.;Cheng, H. F.;Lin, I. N. |
| 國立臺灣科技大學 |
2019 |
Epitaxial growth and characterization of GaN thin films on graphene/sapphire substrate by embedding a hybrid-AlN buffer layer
|
Ke, W.-C.;Liang, Z.-Y.;Tesfay, S.T.;Chiang, Chiang C.-Y.;Yang, C.-Y.;Chang, K.-J.;Lin, J.-C. |
| 大葉大學 |
2008-01-28 |
Epitaxial growth and characterization of Sr-doped lanthanum titanate thin films
|
Chen, S. Y.;Huang, J. W.;Sung, H. H. |
| 國立成功大學 |
2014 |
Epitaxial growth and electronic, charge and spin transport studies on topological insulator films and their applications on spintronic devices
|
PI: Huang, Jung-Chun; CO-PI: Wang, Kang L.; CO-PI: Chang, Shoou-Jinn; CO-PI: Lu, Yan-Ten; CO-PI: Wu, Chung-Lin |
| 國立成功大學 |
2011-09-30 |
Epitaxial growth and exchange coupling of spinel ferrimagnet Ni(0.3)Zn(0.7)Fe(2)O(4) on multiferroic BiFeO(3)
|
Lin, Wei-Jui; Qi, Xiaoding; Chern, Gung; Huang, Jung-Chun-Andrew |
| 國立臺灣大學 |
1996-05 |
Epitaxial Growth and Magnetic Behavior of NiFe2O4 Thin Films
|
S. Venzke, R.B. van Dover, J.M. Phillips, E.M. Gyorgy, T. Siegrist, C.H. Chen, D.J. Werder, R.M. Fleming, R.J. Felder, E. Coleman; R. Opila |
| 國立成功大學 |
2021-12 |
Epitaxial Growth and Structural Characterizations of MnBi2Te4 Thin Films in Nanoscale
|
Su;Shu-Hsuan;Chang;Jen-Te;Chuang;Pei-Yu;Tsai;Ming-Chieh;Peng;Yu-Wei;Lee;Kai, Min;Cheng;Cheng-Maw;Huang;Andrew, Jung-Chung |
| 臺大學術典藏 |
2018-09-10T04:51:59Z |
Epitaxial Growth and Structure of Thin Single Crystal $γ$-Al 2 O 3 Films on Si (111) Using e-Beam Evaporation of Sapphire in Ultra-High Vacuum
|
Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Wu, SY; MINGHWEI HONG |
| 國立東華大學 |
2004 |
Epitaxial growth due to phase separation of disordered eutectic Au:Si alloys on silicon
|
Huang, Y.-L.; M. Seibt; W. Schröter |
| 國立臺灣大學 |
2005 |
Epitaxial growth mechanism of L10 FePt thin films on Pt/Cr bilayer with amorphous glass substrate
|
Sun, An-Cheng; Kuo, P. C.; Hsu, Jen-Hwa; Huang, H. L.; Sun, Jui-Ming |
| 國立交通大學 |
2015-12-02T02:59:18Z |
Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface
|
Li, Ming-Yang; Shi, Yumeng; Cheng, Chia-Chin; Lu, Li-Syuan; Lin, Yung-Chang; Tang, Hao-Lin; Tsai, Meng-Lin; Chu, Chih-Wei; Wei, Kung-Hwa; He, Jr-Hau; Chang, Wen-Hao; Suenaga, Kazu; Li, Lain-Jong |
| 臺大學術典藏 |
2018-09-10T15:34:38Z |
Epitaxial growth of Bi2Te3 topological insulator thin films by temperature-gradient induced physical vapor deposition (PVD)
|
Hsin-Yen Lee; Yu-Sung Chen; Yen-Cheng Lin; Jen-Kai Wu; Ying-Chen Lee; Bin-Kun Wu; Ming-Yau Chern; Chi-Te Liang; Yuan Huei Chang; YUAN-HUEI CHANG |
| 臺大學術典藏 |
2019-12-27T07:50:00Z |
Epitaxial growth of Bi2Te3topological insulator thin films by temperature-gradient induced physical vapor deposition (PVD)
|
Lee, H.-Y.;Chen, Y.-S.;Lin, Y.-C.;Wu, J.-K.;Lee, Y.-C.;Wu, B.-K.;Chern, M.-Y.;Liang, C.-T.;Chang, Y.H.; Lee, H.-Y.; Chen, Y.-S.; Lin, Y.-C.; Wu, J.-K.; Lee, Y.-C.; Wu, B.-K.; Chern, M.-Y.; Liang, C.-T.; Chang, Y.H.; MING-YAU CHERN |
| 國立彰化師範大學 |
2007 |
Epitaxial Growth of Bismuth Telluride Hexagonal Nanoplatelets Using A Solvothermal Approach
|
Liu, Gao-Jhih; Tsao, Chun-Wei; Chen, Yong-Zhi; Wang, Jung-Sheng; Liu, Chia-Jyi |
| 國立成功大學 |
2009-08-15 |
Epitaxial growth of faceted SiC single-crystal nanoparticles using a carbon nanocapsule as a reacting template
|
Chen, Chien-Chong; Tseng, Huei-Ping; Huang, Tsung-Yen; Kuo, Jung-Chang; Huang, Gan-Lin |
| 中原大學 |
2005-11 |
Epitaxial Growth of GaAs on Si(100) Buffered by an InGaAs Strained Interlayer
|
Hsieh, Ming-Fong;Uen, Wu-Yih;Li, Zhen-Yu;Lan, Shan-Ming |
| 國立中山大學 |
2003 |
Epitaxial growth of high quality ZnSSe on lifted-off ZnSSe/In/glass substrate
|
Ming-Kwei Lee; Tsung-Hsiang Shih; Bor-Tzong Tsay |
| 國立中山大學 |
1987 |
Epitaxial Growth of Indium Phosphide on GaAs by Low Pressure Metalorganic Chemical Vapor Deposition
|
M.K. Lee; D.S. Wuu; H.H. Tung |
| 元智大學 |
2011-08 |
Epitaxial growth of InN film on intermediate oxide buffer layer by RF-MOMBE
|
Shou-Yi Kuo; Fang-I Lai; Wei-Chun Chen; Woei-Tyng Lin; Chien-Nan Hsiao; Hsin-I Lin; Han-Chang Pan |
| 元智大學 |
2010-09 |
Epitaxial growth of InN film on intermediate oxide buffer layer by RF-MOMBE
|
Fang-I Lai; S.Y. Kuo; W.C. Chen; W.T. Lin; C.N. Hsiao; H.-I Lin; J.L. Shen |
| 國立臺灣科技大學 |
2007 |
Epitaxial growth of inn films by molecular-beam epitaxy using hydrazoic acid (HN3) as an efficient nitrogen source
|
Chen, J.T.;Hsiao, C.L.;Hsu, H.C.;Wu, C.T.;Yen, C.L.;Wei, P.C.;Chen, L.C.;Chen, K.H. |
| 國立臺灣大學 |
2007-07 |
Epitaxial growth of InN films by molecular-beam epitaxy using hydrazoic acid (HN3) as an efficient nitrogen source
|
Chen, J. T.; Hsiao, C. L.; Hsu, H. C.; Wu, C. T.; Yeh, C. L.; Wei, P. C.; Chen, L. C.; Chen, K. H. |
