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Showing items 400281-400290 of 2348685 (234869 Page(s) Totally) << < 40024 40025 40026 40027 40028 40029 40030 40031 40032 40033 > >> View [10|25|50] records per page
| 中國醫藥大學 |
2009-06-28 |
Etched succinate-functionalized silica hydride stationary phase for open tubular capillary electrochromatography
|
陳建良(Jian-Lian Chen)* |
| 中國醫藥大學 |
|
Etched succinate-functionalized silica hydride stationary phase for open tubular capillary electrochromatography.
|
陳建良(Jian-Lian Chen)* |
| 中國醫藥大學 |
2009-12 |
Etched succinate-functionalized silica hydride stationary phase for open tubular capillary electrochromatography.
|
陳建良(Jian-Lian Chen)* |
| 國立彰化師範大學 |
1985-01 |
Etched-coupled cavity InGaAsP/InP lasers
|
Chen, Kuo-Liang; Wang, Shyh |
| 國立中山大學 |
2000 |
Etching Characteristics and Mechanism of Ba0.7Sr0.3TiO3 Thin Films in an Inductively Coupled Plasma
|
D.S. Wuu; F.C. Liao; N.H. Kuo; R.H. Horng; M.K. Lee |
| 中原大學 |
2000 |
Etching Characteristics of Organic Low-k Dielectrics in the Helicon-wave Plasma Etcher for 0.15 μm Damascene Architecture.
|
J.M. Shieh;T.C. Wei;C.H. Liu;S.C. Suen;B.T. Dai |
| 臺大學術典藏 |
2018-09-10T07:09:06Z |
Etching Characteristics of SiNx Films for DUV Lithography Applications
|
L. A. Wang; LON A. WANG; H. L. Chen |
| 國立交通大學 |
2014-12-08T15:40:39Z |
Etching damages on AlGaN, GaN and InGaN caused by hybrid inductively coupled plasma etch and photoenhanced chemical wet etch by Schottky contact characterizations
|
Fang, CY; Huang, WJ; Chang, EY; Lin, CF; Feng, MS |
| 國立交通大學 |
2014-12-16T06:14:21Z |
Etching method for nitride semiconductor
|
Lee; Wei-I; Huang; Hsin-Hsiung; Zeng; Hung-Yu |
| 國立交通大學 |
2014-12-16T06:15:50Z |
Etching method for nitride semiconductor
|
Lee, Wei-I; Huang, Hsin-Hsiung; Zeng, Hung-Yu |
Showing items 400281-400290 of 2348685 (234869 Page(s) Totally) << < 40024 40025 40026 40027 40028 40029 40030 40031 40032 40033 > >> View [10|25|50] records per page
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