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Showing items 437326-437350 of 2303271 (92131 Page(s) Totally)
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| 國立成功大學 |
2005-07 |
GaN nanocolumns formed by inductively coupled plasmas etching
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Hung, S. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Chen, S. C.; Fang, T. H.; Ji, L. W. |
| 國立中山大學 |
2006 |
GaN nanorod assemblies on self-implanted (111) Si substrates
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H.W. Seo;Q.Y. Chen;L.W. Tu;C.L. Hsiao;Y.J. Tu;X.M. Wang;O. Lazano;W.K. Chu |
| 國立臺灣大學 |
2008 |
GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength
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Wang, Cheng-Yin; Chen, Liang-Yi; Chen, Cheng-Pin; Cheng, Yun-Wei; Ke, Min-Yung; Hsieh, Min-Yann; Wu, Han-Ming; Peng, Lung-Han; Huang, JianJang |
| 臺大學術典藏 |
2018-09-10T07:03:25Z |
GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength
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Yun-Wei Cheng; Min-Yung Ke; Min-Yann Hsieh; Han-Ming Wu; Lung-Han Peng; JianJang Huang; JIAN-JANG HUANG; LUNG-HAN PENG; Cheng-Yin Wang;Liang-Yi Chen;Cheng-Pin Chen;Yun-Wei Cheng;Min-Yung Ke;Min-Yann Hsieh;Han-Ming Wu;Lung-Han Peng;JianJang Huang; Cheng-Yin Wang; Liang-Yi Chen; Cheng-Pin Chen |
| 國立成功大學 |
2013-04 |
GaN Nanowire Field Emitters With the Adsorption of Au Nanoparticles
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Tsai, Tsung-Ying; Chang, Shoou-Jinn; Weng, Wen-Yin; Li, Shuguang; Liu, Shin; Hsu, Cheng-Liang; Hsueh, Han-Ting; Hsueh, Ting-Jen |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
GaN on Si with nm-thick single-crystal Sc 2 O 3 as a template using molecular beam epitaxy
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Lee, WC;Lee, YJ;Kwo, J;Hsu, CH;Lee, CH;Wu, SY;Ng, HM;Hong, M; Lee, WC; Lee, YJ; Kwo, J; Hsu, CH; Lee, CH; Wu, SY; Ng, HM; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:37Z |
GaN on Si with nm-thick single-crystal Sc2O3 as a template using molecular beam epitaxy
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Lee, W.C.;Lee, Y.J.;Kwo, J.;Hsu, C.H.;Lee, C.H.;Wu, S.Y.;Ng, H.M.;Hong, M.; Lee, W.C.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, C.H.; Wu, S.Y.; Ng, H.M.; Hong, M.; MINGHWEI HONG |
| 國立交通大學 |
2014-12-08T15:12:23Z |
GaN p-i-n photodetectors with an LT-GaN interlayer
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Lin, J. C.; Su, Y. K.; Chang, S. J.; Lan, W. H.; Huang, K. C.; Chen, W. R.; Lan, C. H.; Huang, C. C.; Lin, W. J.; Cheng, Y. C. |
| 國立成功大學 |
2008-04 |
GaN p-i-n photodetectors with an LT-GaN interlayer
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Lin, J. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Lan, W. H.; Huang, K. C.; Chen, W. R.; Lan, C. H.; Huang, C. C.; Lin, W. J.; Cheng, Y. C. |
| 國立成功大學 |
2002-12 |
GaN p-n junction diode formed by Si ion implantation into p-GaN
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Lee, M. L.; Sheu, Jinn-Kong; Yeh, L. S.; Tsai, M. S.; Kao, C. J.; Tun, Chun-Ju; Chang, Shoou-Jinn; Chi, Gou-Chung |
| 南台科技大學 |
2004 |
GaN Photodetectors with Transparent Indium Tin Oxide Electrodes
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唐經洲; Jing-Jou Tang;邱裕中; Yu-Zung Chiou |
| 南台科技大學 |
2004-03 |
GaN Photodetectors with Transparent Indium Tin Oxide Electrodes
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Yu-Zung Chiou; Jing-Jou Tang |
| 臺大學術典藏 |
2018-09-10T08:17:45Z |
GaN Photonic Crystal Membrane Laser
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Cheng-Hung Lin,;Jyh-Yang Wang,;Cheng-Yen Chen,;Kun-Ching Shen,;Dong-Ming Yeh,;Yean-Woei Kiang,;C. C. Yang,; Cheng-Hung Lin,; Jyh-Yang Wang,; Cheng-Yen Chen,; Kun-Ching Shen,; Dong-Ming Yeh,; Yean-Woei Kiang,; C. C. Yang,; YEAN-WOEI KIANG |
| 南台科技大學 |
2002 |
GaN p–n junction diode formed by Si ion implantation into p-GaN
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李明倫; M. L. Lee; J. K. Sheu; L. S. Yeh; M. S. Tsai; C. J. Kao; C. J. Tun; S. J. Chang; G. C. Chi |
| 國立交通大學 |
2018-08-21T05:53:05Z |
GaN Schottky Barrier Diodes on Free-Standing GaN Wafer
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Liu, Xinke; Gu, Hong; Li, Kuilong; Wang, Jianfeng; Wang, Lei; Kuo, Hao-Chung; Liu, Wenjun; Chen, Lin; Fang, Jianping; Liu, Meihua; Lin, Xinnan; Xu, Ke; Ao, Jin-Ping |
| 國立臺灣科技大學 |
2010 |
GaN schottky barrier photodetectors prepared on patterned sapphire substrate
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Chang S.J.; Wang S.M.; Chen T.P.; Young S.J.; Lin Y.C.; Wu S.L.; Huang B.R. |
| 國立成功大學 |
2012-11 |
GaN Schottky Barrier Photodetectors with a beta-Ga2O3 Cap Layer
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Huang, Zhen-Da; Chuang, Ricky Wenkuei; Weng, Wen-Yin; Chang, Shoou-Jinn; Chiu, Chiu-Jung; Wu, San-Lein |
| 國立成功大學 |
2011-11 |
GaN Schottky barrier photodetectors with a lattice matched Al0.82In0.18N intermediate layer
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Huang, Z.-D.;Weng, W.-Y.;Chang, S.-J.;Jung, S.-C.;Chiu, C.-J.;Hsueh, T.-J.;Lai, W.-C.;Wu, S.-L. |
| 實踐大學 |
2011 |
GaN Schottky barrier photodetectors with a lattice-matched Al 0.82In0.18 intermediate layer
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Huang, Z.D.;Weng, W.Y.;Chang, S.J.;Hung, S.C.;Chiu, C.J.;Hsueh, T.J.;Lai, W.C.;Wu, S.L. |
| 實踐大學 |
2011 |
GaN Schottky Barrier Photodetectors With a Lattice-Matched Al0.82In0.18N Intermediate Layer
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Huang, Z.D.;Weng, W.Y.;Chang, S.J.;Hung, S.C.;Chiu, C.J.;Hsueh, T.J.;Lai, W.C.;Wu, S.L. |
| 南台科技大學 |
2003 |
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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李明倫; M. L. Lee; J. K. Sheu; W. C. Lai; S. J. Chang; Y. K. Su; M. G. Chen; C. J. Kao; J. M. Tsai; G. C. Chi |
| 南台科技大學 |
2003 |
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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李明倫; M. L. Lee; J. K. Sheu; C. J. Kao; M. C. Chen; C. J. Tun; W. C. Lai; Y. K. Su; S.J. Chang; G. C. Chi |
| 國立成功大學 |
2003-04-28 |
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, J. K.; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2007-09-03 |
GaN Schottky barrier photodetectors with SiN/GaN nucleation layer
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Jhou, Y. D.; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, Y. Y.; Liu, C. H.; Lee, H. C. |
| 臺大學術典藏 |
2021-02-26T08:43:37Z |
GaN Schottky contact on the Pattern Sapphire Substrate with Reducted threading dislocation
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Lee, C.-C.; Chien, C.-Y.; Cheng, W.I.; Yen, C.-W.; Hu, P.-Y.; Kuan, C.-H.; CHIEH-HSIUNG KUAN |
Showing items 437326-437350 of 2303271 (92131 Page(s) Totally)
<< < 17489 17490 17491 17492 17493 17494 17495 17496 17497 17498 > >>
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