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Showing items 438151-438175 of 2307984 (92320 Page(s) Totally)
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| 國立臺灣大學 |
1997 |
Ga0.51In0.49P/In0.15Ga0.85 As/GaAs pseudomorphic doped-channel FET with high-current density and high-breakdown voltage
|
Lin, Yo-Sheng; Sun, Tai-Ping; Lu, Shey-Shi |
| 國立臺灣大學 |
1999 |
Ga0.51In0.49P/InxGa1 – xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy
|
Lin, Yo-Sheng; Lu, Shey-Shi; Chang, Pei-Zen |
| 國立暨南國際大學 |
2003 |
Ga0.51In0.49P/InxGa1-xAs/GaAs doped-channel FETs (DCFETs) and their applications on monolithic microwave integrated circuits (MMICs)
|
陳志成?; Chen, CC |
| 國立暨南國際大學 |
2003 |
Ga0.51In0.49P/InxGa1-xAs/GaAs doped-channel FETs (DCFETs) and their applications on monolithic microwave integrated circuits (MMICs)
|
林佑昇?; Lin, YS |
| 國立臺灣大學 |
2003 |
Ga0.51In0.49P/InxGa1-xAs/GaAs doped-channel FETs (DCFETs) and their applications on monolithic microwave integrated circuits (MMICs)
|
Lin, Yo-Sheng; Chen, Chih-Chen; Lu, Shey-Shi |
| 臺大學術典藏 |
1999-02 |
Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy
|
Chang, Pei-Zen; Lu, Shey-Shi; Lin, Yo-Sheng; Lin, Yo-Sheng;Lu, Shey-Shi;Chang, Pei-Zen |
| 國立臺灣大學 |
1999-02 |
Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy
|
Lin, Yo-Sheng; Lu, Shey-Shi; Chang, Pei-Zen |
| 臺大學術典藏 |
2018-09-10T07:37:07Z |
Ga0.51In0.49P/InxGa1?xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy
|
Chang, P.-Z.; Lin, Y.-S.; Lu, S.-S.; Lu, S.-S. |
| 國立交通大學 |
2014-12-08T15:45:20Z |
Ga0.5In0.5P barrier layer for wet oxidation of AlAs
|
Lee, SC; Lee, WI |
| 臺大學術典藏 |
2018-09-10T14:54:10Z |
GA2 and GA20-oxidase expressions are associated with the meristem position in Streptocarpus rexii (Gesneriaceae)
|
Spada, A.; M?ller, M.; CHUN-NENG WANG; Wang, C.-N.; Nishii, K.;Ho, M.-J.;Chou, Y.-W.;Gabotti, D.;Wang, C.-N.;Spada, A.;M?ller, M.; Nishii, K.; Ho, M.-J.; Chou, Y.-W.; Gabotti, D. |
| 臺大學術典藏 |
2019-12-27T07:49:43Z |
Ga2 O3 (Gd2 O3) Si3 N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion
|
Zheng, J.F.; Tsai, W.; Lin, T.D.; Lee, Y.J.; Chen, C.P.; Hong, M.; Kwo, J.; Cui, S.; Ma, T.P.; MINGHWEI HONG |
| 臺北醫學大學 |
2003-04 |
GA2002,SEE YOU IN TAIPEI
|
臺北醫學大學 |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
Ga203 films for electronic and optoelectronic ap
|
Passlack, M;Schubert, EF;Hobson, WS;Hong, M;Moriya, N;Chu, SNG;Konstadinidis, K;Mannaerts, JP;Schnoes, ML;Zydzik, GJ; Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:13Z |
Ga2O3 (Gd2O3) as a dielectric insulator for GaAs device applications
|
Lay, Tsong S; Hong, Minghwei; Mannaerts, JP; Liu, CT; Kwo, Jueinai R; Ren, Fan; Marcus, MA; Ng, KK; Chen, Young-Kai; Chou, Li-Jen; others; MINGHWEI HONG |
| 臺大學術典藏 |
1998 |
Ga2O3 (Gd2O3) as a gate dielectric for GaAs MOSFETs
|
Hong, M; Kwo, J; Liu, CT; Marcus, MA; Lay, TS; Ren, F; Mannaerts, JP; Ng, KK; Chen, YK; Chou, LJ; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices
|
Chu, LK;Lin, TD;Huang, ML;Chu, RL;Chang, CC;Kwo, J;Hong, M; Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:12Z |
Ga2O3 films for electronic and optoelectronic applications
|
Passlack, M; Schubert, EF; Hobson, WS; Hong, M; Moriya, N; Chu, SNG; Konstadinidis, K; Mannaerts, JP; Schnoes, ML; Zydzik, GJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:10Z |
GA2O3 FILMS FOR INSULATOR/III-V SEMICONDUCTOR INTERFACES
|
Passlack, M;Hong, M;Schubert, EF;Mannaerts, JP;HOBSON, WS;MORIYA, N;LOPATA, J;ZYDZIK, GJ; Passlack, M; Hong, M; Schubert, EF; Mannaerts, JP; HOBSON, WS; MORIYA, N; LOPATA, J; ZYDZIK, GJ; MINGHWEI HONG |
| 國立成功大學 |
2014 |
Ga2O3 Films for Photoelectrochemical Hydrogen Generation
|
Chang, Shoou-Jinn; Wu, Ya-Ling; Weng, Wen-Yin; Lin, Yo-Hong; Hsieh, Wei-Kang; Sheu, Jinn-Kong; Hsu, Cheng-Liang |
| 國立成功大學 |
2013-06 |
Ga2O3 Nanowire Photodetector Prepared on SiO2/Si Template
|
Wu, Y. L.; Chang, Shoou-Jinn; Weng, W. Y.; Liu, C. H.; Tsai, T. Y.; Hsu, C. L.; Chen, K. C. |
| 臺大學術典藏 |
2019-12-27T07:49:36Z |
Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices
|
Chu, L.K.;Lin, T.D.;Huang, M.L.;Chu, R.L.;Chang, C.C.;Kwo, J.;Hong, M.; Chu, L.K.; Lin, T.D.; Huang, M.L.; Chu, R.L.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 元智大學 |
May-19 |
Ga2O3-based p-i-n solar blind deep ultraviolet photodetectors
|
李清庭; Jian, Li-Yi; Lee, Hsin-Ying |
| 國立成功大學 |
2019-05 |
Ga2O3-based p-i-n solar blind deep ultraviolet photodetectors
|
Jian;Li-Yi;Lee;Hsin-Ying;Lee;Ching-Ting |
| 國立成功大學 |
2020 |
Ga2O3-based solar-blind deep ultraviolet light-emitting diodes
|
Lin, C.-H.;Lee, C.-T. |
| 國立成功大學 |
2013-09 |
Ga2O3/AlGaN/GaN Heterostructure Ultraviolet Three-Band Photodetector
|
Huang, Zheng-Da; Weng, Wen Yin; Chang, Shoou Jinn; Chiu, Chiu-Jung; Hsueh, Ting-Jen; Wu, San-Lein |
Showing items 438151-438175 of 2307984 (92320 Page(s) Totally)
<< < 17522 17523 17524 17525 17526 17527 17528 17529 17530 17531 > >>
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