| 臺大學術典藏 |
2018-09-10T04:55:29Z |
Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs
|
Hua, W.-C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M.; CHEE-WEE LIU |
| 國立臺灣大學 |
2003 |
Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum
|
Peng, Y. H.; Chen, C. C.; Kuan, C. H.; Cheng, H. H. |
| 國立臺灣大學 |
2003-01 |
Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum
|
Peng, Y. H.; Chen, C. C.; Kuan, C. H.; Cheng, H. H. |
| 臺大學術典藏 |
2003 |
Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum
|
CHIEH-HSIUNG KUAN; Cheng, H.H.; Kuan, C.H.; Chen, C.C.; Peng, Y.H.; Peng, Y.H.;Chen, C.C.;Kuan, C.H.;Cheng, H.H. |
| 臺大學術典藏 |
2018-09-10T04:12:36Z |
Ge quantum dots sandwiched between two thick Si blocking layers to increase high detectivity
|
Peng, Y.H.; Chen, C.C.; Kuan, C.H.; Cheng, H.H.; CHIEH-HSIUNG KUAN |
| 國立臺灣大學 |
2002 |
Ge quantum dots sandwiched between two thick Si blocking layers to increase high detectivity
|
Peng, Y.H.; Chen, C.C.; Kuan, C.H.; Cheng, H.H. |
| 國立交通大學 |
2014-12-08T15:28:41Z |
Ge technology beyond Si CMOS
|
Chin, Albert |
| 國立成功大學 |
2010-07-01 |
Ge-doped In2O3和In2Ge2O7奈米線的調控生長及光學性質研究
|
游智凱; Yu, Chih-Kai |
| 國立成功大學 |
2010-07-01 |
Ge-doped In2O3和In2Ge2O7奈米線的調控生長及光學性質研究
|
游智凱; Yu, Chih-Kai |
| 國立交通大學 |
2015-11-26T01:07:53Z |
Ge-Ku-Duffing系統及Sprott C, E系統的渾沌與渾沌同步
|
李泳厚; Li, Yong-Hou; 戈正銘; Ge, Zheng-Ming |
| 國立交通大學 |
2015-11-26T01:07:51Z |
Ge-Ku-Mathieu系統及Sprott19, 22系統的渾沌及渾沌同步
|
王翔平; Wang, Xiang- Ping; 戈正銘; Ge, Zheng-Ming |
| 國立交通大學 |
2015-11-26T01:07:54Z |
Ge-Ku-van der Pol系統及Sprott 22系統的渾沌與渾沌同步
|
蔡尚恩; Tsai, Shang- En; 戈正銘; Ge, Zheng-Ming |
| 元培科技大學 |
2006 |
GE-MINItrac 醫用迴旋加速器環境輻射評估
|
郭明杰;卓奕均; 陳耀文;殷國維;邱志宏;林招膨 |
| 國立東華大學 |
2007 |
Ge-on-glass Detectors
|
林楚軒; C.-H. Lin; Y.-T. Chiang; C.-C. Hsu; C.-H. Lee; C.-F. Huang; C.-H. Lai; T.-H. Cheng; C. W. Liu |
| 國立臺灣大學 |
2007 |
Ge-on-glass Detectors
|
Lin, C.-H.; Chiang, Y.-T.; Hsu, C.-C.; Lee, C.-H.; Huang, C.-F.; Lai, C.-H.; Cheng, T.-H.; Liu, C. W. |
| 國立東華大學 |
2007-12 |
Ge-on-Polyimide Photodetector
|
林楚軒; Lin, Chu-Hsuan; C.-H. Lin;C.-H. Lee;Y.-T. Chiang;C.-C. Hsu;Y. Deng;Y.-H. Dai;C. W. Liu |
| 國立交通大學 |
2014-12-12T02:18:30Z |
Ge-Te-Sb薄膜的光學性質量測與在相變化型光碟的應用
|
劉啟宇; Liu, Chi-Yu; 謝漢萍; H.P.David Shieh |
| 國立交通大學 |
2019-04-03T06:47:08Z |
Ge/Al bilayer thin film for optical write-once media
|
Wu, T. H.; Kuo, P. C.; Chen, Jung-Po; Wu, Chih-Yuan; Yen, Po-Fu; Jeng, Tzuan-Ren; Huang, Der-Ray; Ou, Sin-Liang |
| 義守大學 |
2017-05 |
Ge/IIIV fin field-effect transistor common gate process and numerical simulations
|
Bo-Yuan Chen;Jiann-Lin Chen;Chun-Lin Chu;Guang-Li Luo;Shyong Lee;Edward Yi Chang |
| 國立交通大學 |
2019-04-03T06:43:30Z |
Ge/IIIV fin field-effect transistor common gate process and numerical simulations
|
Chen, Bo-Yuan; Chen, Jiann-Lin; Chu, Chun-Lin; Luo, Guang-Li; Lee, Shyong; Chang, Edward Yi |
| 國立成功大學 |
2022-01-19 |
Ge/Si multilayer epitaxy and removal of dislocations from Ge-nanosheet-channel MOSFETs
|
Chu;Chun-Lin;Chang;Jen-Yi;Chen;Po-Yen;Wang;Po-Yu;Hsu;Shu-Han;Chou;Dean |
| 國立交通大學 |
2014-12-12T02:24:52Z |
Ge/Si(100):Cl表面上Si、Ge原子交換的觀測
|
潘祥元; shiang-yuan Pan; 林登松; Deng-Sung Lin |
| 國立臺灣大學 |
2007-10 |
Ge/SiGe quantum-well waveguide photodetectors on silicon for the near-infrared
|
Fidaner, O.; Okyay, A. K.; Roth, J. E.; Schaevitz, R. K.; Kuo, Y.-H.; Saraswat, K. C.; Harris, J. S.; Miller, D. A. B. |
| 國立臺灣大學 |
2002-07 |
Ge/sub 2/Sb/sub 2/Te/sub 5/ thin film doped with silver
|
Lie, C.T.; Kuo, P.C.; Wu, T.H.; Chen, P.W. |
| 臺大學術典藏 |
2019-03-11T08:02:04Z |
Ge1-xSix on Ge-Based N-Type Metal-Oxide Semiconductor Field-Effect Transistors by Device Simulation Combined with High-Order StressPiezoresistive Relationships
|
M. H.Liao; C.-C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng; S.-W. Cheng;P.-C. Huang;C.-P. Hsieh;C.-C. Lee;M. H.Liao |
