輔英科技大學 |
2018-10-16 |
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|
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元智大學 |
2018-07-04 |
II:元智大學胡逢瑛老師:中、美、俄操作區域整合 下的印度個案 ( Russia-Indian Relations in the Multipolarity World Under the Scenario of “Indo-Pacific Strategy)
|
Feng-Yung Hu |
高雄醫學大學 |
2011 |
IIAPA嵌合啟動子肝癌特異性基因治療腫瘤
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謝雅茹;陳富都;柯建志;王信二;黃志仁;侯明鋒;林康平;Juri, G.Gelovani9;劉仁賢 ; Hsieh;Y.J.;Chen;F.D.;Ke;C.C.;Wang;H.E.;Huang;C.J.;Hou;M.F.;Lin;K.P.;Gelovani;Liu, J.G.&;R.S. |
臺大學術典藏 |
2018-09-10T06:27:42Z |
IIB / M duality and longitudinal membranes in M(atrix) theory
|
Ho, Pei-Ming and Wu, Yong-Shi; PEI-MING HO |
國立成功大學 |
2003-06-18 |
IIDT結構表面聲波元件特性之探討
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鐘建川; Jong, Jiann-Chuan |
國立臺灣大學 |
|
iif characteristics of oyster embryos and eggs determined by a
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Lin, Ta-Te; Lung, Ken |
中國文化大學 |
2004 |
iii
|
Chen,Joyce |
國立成功大學 |
1993 |
III A 族金屬在鍺表面低層覆蓋的量子計算研究(II)
|
鄭靜 |
國立臺灣大學 |
2015 |
III- 族氮化物金氧半電晶體於不同基板之特性
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林柏任; Lin, Bo-Ren |
國立臺灣大學 |
2008- |
III-Nitride Devices and Nano-Engineering
|
FENG, Zhe Chuan |
國立成功大學 |
2008 |
III-nitride light-emitting diodes on Si
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施權峰; N.�C. Chen |
國立臺灣科技大學 |
2017 |
III-Nitride Phototransistors Fabricated on a Light-Emitting-Diode Epitaxial Wafer
|
Yeh, P.S.;Hsu, T.-P.;Chiu, Y.-C.;Yang, S.;Wu, C.-Y.;Liou, J.-S. |
國立臺灣大學 |
2006-03 |
III-Nitride Semiconductor Materials
|
FENG, Zhe Chuan |
臺大學術典藏 |
2018-09-10T04:15:36Z |
III-nitride semiconductors: optical poperties II
|
Lung-Han Peng; LUNG-HAN PENG |
國立成功大學 |
2016-07 |
III-Nitride-Based Cyan Light-Emitting Diodes With GHz Bandwidth for High-Speed Visible Light Communication
|
Shi, Jin-Wei; Chi, Kai-Lun; Wun, Jhih-Min; Bowers, John E.; Shih, Ya-Hsuan; Sheu, Jinn-Kong |
國立交通大學 |
2014-12-13T10:34:12Z |
III-Nitride量子點及奈米結構成長及光學特性之研究
|
郭浩中; Hao-ChungKuo |
臺大學術典藏 |
2018-09-10T05:56:10Z |
III-V Compound Semiconductor MOSFET
|
Hong, Minghwei; Kwo, J Raynien; MINGHWEI HONG |
臺大學術典藏 |
2018-09-10T06:28:19Z |
III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric
|
Ren, F; Hong, M; Kuo, JM; Hobson, WS; Lothian, JR; Tsai, HS; Lin, J; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:20Z |
III-V compound semiconductor transistors - From planar to nanowire structures
|
Riel, H.;Wernersson, L.-E.;Hong, M.;Del Alamo, J.A.; Riel, H.; Wernersson, L.-E.; Hong, M.; Del Alamo, J.A.; MINGHWEI HONG |
臺大學術典藏 |
2018-09-10T14:56:28Z |
III-V compound semiconductor transistors—from planar to nanowire structures
|
Riel, Heike;Wernersson, Lars-Erik;Hong, Minghwei;del Alamo, Jes{\\'u; Riel, Heike; Wernersson, Lars-Erik; Hong, Minghwei; del Alamo, Jes{\\'u; MINGHWEI HONG |
國立彰化師範大學 |
2001 |
III-V InGaN and AlGaN Bandgap Bowing and Optical Properties Derived from Theoretical Simulation
|
Lin, Wen-Wei; Kuo, Yen-Kuang; Lin, Jiann |
國立交通大學 |
2014-12-16T06:13:59Z |
III-V metal-oxide-semiconductor device
|
Chang Edward Yi; Lin Yueh-Chin |
國立交通大學 |
2014-12-16T06:14:59Z |
III-V METAL-OXIDE-SEMICONDUCTOR DEVICE
|
CHANG Edward Yi; LIN Yueh-Chin |
國立交通大學 |
2014-12-16T06:15:17Z |
III-V METAL-OXIDE-SEMICONDUCTOR DEVICE
|
CHANG Edward Yi; LIN Yueh-Chin |
臺大學術典藏 |
2019-12-27T07:49:44Z |
III-V metal-oxide-semiconductor field-effect transistors with high 庥 dielectrics
|
Hong, M.; Kwo, J.R.; Tsai, P.-C.; Chang, Y.; Huang, M.-L.; Chen, C.-P.; Lin, T.-D.; MINGHWEI HONG |