國立臺灣科技大學 |
2007-08 |
Improved Reflective Signal-to-Noise Ratio to Stabilize Laser Frequency using Pound-Drever-Hall Technique with Zerodur Etalon
|
Shih-Hsiang Hsu |
國立成功大學 |
2007-05 |
Improved reliability and ESD characteristics of flip-chip GaN-based LEDs with internal inverse-parallel protection diodes
|
Shei, Shih-Chang; Sheu, Jinn-Kong; Shen, Chien-Fu |
國立交通大學 |
2014-12-08T15:07:54Z |
Improved reliability from a plasma-assisted metal-insulator-metal capacitor comprising a high-k HfO(2) film on a flexible polyimide substrate
|
Meen, Jagan Singh; Chu, Min-Ching; Kuo, Shiao-Wei; Chang, Feng-Chih; Ko, Fu-Hsiang |
國立交通大學 |
2019-04-02T05:58:59Z |
Improved reliability from a plasma-assisted metal-insulator-metal capacitor comprising a high-k HfO2 film on a flexible polyimide substrate
|
Meen, Jagan Singh; Chu, Min-Ching; Kuo, Shiao-Wei; Chang, Feng-Chih; Ko, Fu-Hsiang |
朝陽科技大學 |
2021-06-01 |
Improved Reliability of Communication in Cellular Internet of Things through Consensus
|
王淑卿; 潘信宏; Wang, Shu-Ching; Pan, Shin-Hung |
國立交通大學 |
2017-04-21T06:49:50Z |
Improved Reliability of GaN HEMTs Using N-2 Plasma Surface Treatment
|
Liu, S. C.; Dai, G. M.; Chang, E. Y. |
國立交通大學 |
2014-12-08T15:16:58Z |
Improved reliability of HfO2/SiON gate stack by fluorine incorporation
|
Lu, WT; Chiein, CH; Lan, WT; Lee, TC; Lehnen, P; Huang, TY |
國立交通大學 |
2014-12-08T15:10:01Z |
Improved reliability of Mo nanocrystal memory with ammonia plasma treatment
|
Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
國立中山大學 |
2009 |
Improved reliability of Mo nanocrystal memory with ammonia plasma treatment
|
C.C. Lin;T.C. Chang;C.H. Tu;W.R. Chen;C.W. Hu;S.M. Sze;T.Y. Tseng;S.C. Chen;J.Y. Lin |
國立成功大學 |
2014 |
Improved Reliability of Small Molecule Organic Solar Cells by Double Anode Buffer Layers
|
Huang, Pao-Hsun; Huang, Chien-Jung; Chen, Kan-Lin; Ke, Jhong-Ciao; Wang, Yeong-Her; Kang, Chih-Chieh |
國立東華大學 |
2009-09 |
Improved Relief Texture Mapping Using Minmax Texture
|
Tai,Wen-Kai; Lee,Lo-wei; Tseng,Shih-Wei |
南台科技大學 |
2005-01 |
Improved remote authentication scheme with smart card
|
李南逸; N.Y. Lee; Y.C. Chiu |
東海大學 |
2008 |
Improved renormalization group analysis for yang-mills theory
|
Kawamoto, S., Matsuo, T.; Kawamoto, S., Matsuo, T. |
國立臺灣海洋大學 |
1998-08 |
Improved representation-burden conservation network for learning nonstationary VQ
|
JUNG-HUA WANG; WEI-DER SUN |
中原大學 |
2009-02 |
Improved Representatives for Judging Unrepairability and Deciding Economic Repair Solutions of Memories
|
梁新聰 |
中原大學 |
2006-08 |
Improved Representatives for Unrepairability Judging and Economic Repair Solutions of Memories
|
Liang, Hsing-Chung;Tzeng, Le-Quen |
國立臺灣科技大學 |
2012 |
Improved resistance switching characteristics in Ti-Doped Yb 2O 3 for resistive nonvolatile memory devices
|
Mondal, S.;Her, J.-L.;Chen, F.-H.;Shih, S.-J.;Pan, T.-M. |
國立臺灣科技大學 |
2012 |
Improved Resistance Switching Characteristics in Ti-Doped Yb2O3 for Resistive Nonvolatile Memory Devices
|
Mondal, Somnath;Her, Jim-Long;Chen, Fa-Hsyang;Shih, Shao-Ju;Pan, Tung-Ming |
國立成功大學 |
2023-12-1 |
Improved Resistive Switching Behaviors of Al/Ag-Doped Fe2O3 Film/ITO Devices Fabricated with a Radio-Frequency Co-Sputtering System
|
Hsu;Feng, Chia;Huang;Yu-chun;Huang;Shyh-Jer;Yang;Chih-Chiang;Su;Yan-Kuin |
國立交通大學 |
2014-12-08T15:31:42Z |
Improved Resistive Switching Characteristics by Al2O3 Layers Inclusion in HfO2-Based RRAM Devices
|
Huang, Chun-Yang; Jieng, Jheng-Hong; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
國立聯合大學 |
2010 |
Improved Resistive Switching Dispersion of NiOx Thin Film by Cu-Doping Method
|
Liu, Chih-Yi;Lin, Xin-Jie)Wang, Hung-Yu;Lai, Chun-Hung |
國立臺灣大學 |
2012 |
Improved Resistive Switching Memory Characteristics Using Core-Shell IrOx Nano-Dots in Al2O3/WOx Bilayer Structure
|
Banerjee, W.; Maikap, S.; Rahaman, S.Z.; Prakash, A.; Tien, T.-C.; Li, W.-C.; Yang, J.-R. |
國立交通大學 |
2014-12-08T15:44:21Z |
Improved resistive switching properties of Ti/ZrO(2)/Pt memory devices for RRAM application
|
Wang, Sheng-Yu; Tsai, Chen-Han; Lee, Dai-Ying; Lin, Chih-Yang; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
國立交通大學 |
2019-04-02T05:58:59Z |
Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application
|
Wang, Sheng-Yu; Tsai, Chen-Han; Lee, Dai-Ying; Lin, Chih-Yang; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
中華大學 |
2011 |
Improved Retention Characteristic in Polycrystalline Silicon-Oxide-Hafnium Oxide-Oxide-Silicon-Type Nonvolatile Memory with Robust Tunnel Oxynitride
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賴瓊惠; Lai, Chiung-Hui |